Combinational Approach of Electrochemical Etching and Metal-Assisted Chemical Etching for p-Type Silicon Wire Formation

2011 ◽  
Vol 14 (1) ◽  
pp. D5 ◽  
Author(s):  
Hwan Soo Jang ◽  
Ho-Jin Choi ◽  
Byeong-Yun Oh ◽  
Jae Hyun Kim
Keyword(s):  
Chemical Etching ◽  
Electrochemical Etching ◽  
Type Silicon ◽  
Metal Assisted Chemical Etching ◽  
P Type

Optimization of metal-assisted chemical etching process in fabrication of p-type silicon wire arrays

2011 ◽  
Vol 11 (1) ◽  
pp. S25-S29 ◽  
Author(s):  
Ho-Jin Choi ◽  
Seongho Baek ◽  
Hwan Soo Jang ◽  
Seong Been Kim ◽  
Byeong-Yun Oh ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Etching Process ◽  
Wire Arrays ◽  
Type Silicon ◽  
Metal Assisted Chemical Etching ◽  
P Type

Utilization of Low Wavelength Laser Linking with Electrochemical Etching to Produce Nano-Scale Porous Layer on p-Type Silicon Wafer with High Luminous Flux

2021 ◽  
Vol 10 (1) ◽  
pp. 016003
Author(s):  
Philip Nathaniel Immanuel ◽  
Chao-Ching Chiang ◽  
Tien-Hsi Lee ◽  
Sikkanthar Diwan Midyeen ◽  
Song-Jeng Huang
Keyword(s):  
Silicon Wafer ◽  
Porous Layer ◽  
Electrochemical Etching ◽  
Luminous Flux ◽  
Nano Scale ◽  
Type Silicon ◽  
P Type

Metal-assisted chemical etching for very high aspect ratio grooves inn-type silicon wafers

2014 ◽  
Vol 24 (12) ◽  
pp. 125026 ◽  
Author(s):  
Katherine Booker ◽  
Maureen Brauers ◽  
Erin Crisp ◽  
Shakir Rahman ◽  
Klaus Weber ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Chemical Etching ◽  
Silicon Wafers ◽  
Type Silicon ◽  
Metal Assisted Chemical Etching ◽  
Very High

scholarly journals Peculiarities of Photoluminescence in Porous Silicon Prepared by Metal-Assisted Chemical Etching

ISRN Optics ◽  
2012 ◽  
Vol 2012 ◽  
pp. 1-6 ◽  
Author(s):  
Igor Iatsunskyi ◽  
Valentin Smyntyna ◽  
Nykolai Pavlenko ◽  
Olga Sviridova
Keyword(s):  
Porous Silicon ◽  
Chemical Etching ◽  
Etching Time ◽  
Force Microscopy ◽  
Porous Layers ◽  
Atomic Force ◽  
Silicon Nanostructure ◽  
Metal Assisted Chemical Etching ◽  
Concentrated Solution ◽  
P Type

Photoluminescent (PL) porous layers were formed on p-type silicon by a metal-assisted chemical etching method using H2O2 as an oxidizing agent. Silver particles were deposited on the (100) Si surface prior to immersion in a solution of HF and H2O2. The morphology of the porous silicon (PS) layer formed by this method was investigated by atomic force microscopy (AFM). Depending on the metal-assisted chemical etching conditions, the macro- or microporous structures could be formed. Luminescence from metal-assisted chemically etched layers was measured. It was found that the PL intensity increases with increasing etching time. This behaviour is attributed to increase of the density of the silicon nanostructure. It was found the shift of PL peak to a green region with increasing of deposition time can be attributed to the change in porous morphology. Finally, the PL spectra of samples formed by high concentrated solution of AgNO3 showed two narrow peaks of emission at 520 and 550 nm. These peaks can be attributed to formation of AgF and AgF2 on a silicon surface.

Schottky contact barrier height enhancement on p-type silicon by wet chemical etching

1989 ◽  
Vol 48 (4) ◽  
pp. 391-395 ◽  
Author(s):  
G. A. Adegboyega ◽  
A. Poggi ◽  
E. Susi ◽  
A. Castaldini ◽  
A. Cavallini
Keyword(s):  
Barrier Height ◽  
Chemical Etching ◽  
Schottky Contact ◽  
Type Silicon ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
Contact Barrier ◽  
P Type

Simulation of hydrogen penetration into p-type silicon under wet chemical etching

2002 ◽  
Vol 36 (3) ◽  
pp. 282-285 ◽  
Author(s):  
O. V. Feklisova ◽  
E. B. Yakimov ◽  
N. A. Yarykin
Keyword(s):  
Chemical Etching ◽  
Type Silicon ◽  
Hydrogen Penetration ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
P Type
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