Optimization of metal-assisted chemical etching process in fabrication of p-type silicon wire arrays

2011 ◽  
Vol 11 (1) ◽  
pp. S25-S29 ◽  
Author(s):  
Ho-Jin Choi ◽  
Seongho Baek ◽  
Hwan Soo Jang ◽  
Seong Been Kim ◽  
Byeong-Yun Oh ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Etching Process ◽  
Wire Arrays ◽  
Type Silicon ◽  
Metal Assisted Chemical Etching ◽  
P Type

scholarly journals Silicon Conical Structures by Metal Assisted Chemical Etching

Micromachines ◽  
2020 ◽  
Vol 11 (4) ◽  
pp. 402 ◽  
Author(s):  
Oscar Pérez-Díaz ◽  
Enrique Quiroga-González
Keyword(s):  
Chemical Etching ◽  
Etching Process ◽  
Inexpensive Method ◽  
Final Shape ◽  
Metal Assisted Chemical Etching ◽  
Conical Structures

A simple and inexpensive method to obtain Si conical structures is proposed. The method consists of a sequence of steps that include photolithography and metal assisted chemical etching (MACE) to create porous regions that are dissolved in a post-etching process. The proposed process takes advantage of the lateral etching obtained when using catalyst particles smaller than 40 nm for MACE. The final shape of the base of the structures is mainly given by the shape of the lithography mask used for the process. Conical structures ranging from units to hundreds of microns can be produced by this method. The advantage of the method is its simplicity, allowing the production of the structures in a basic chemical lab.

Formation of Nanotextured Surfaces on Microtextured Si Solar Cells by Metal-Assisted Chemical Etching Process

2014 ◽  
Vol 14 (12) ◽  
pp. 9224-9231 ◽  
Author(s):  
Bhaskar Parida ◽  
Jaeho Choi ◽  
Gyoungho Lim ◽  
Seungil Park ◽  
Keunjoo Kim
Keyword(s):  
Solar Cells ◽  
Chemical Etching ◽  
Etching Process ◽  
Si Solar Cells ◽  
Metal Assisted Chemical Etching

Metal-assisted chemical etching for very high aspect ratio grooves inn-type silicon wafers

2014 ◽  
Vol 24 (12) ◽  
pp. 125026 ◽  
Author(s):  
Katherine Booker ◽  
Maureen Brauers ◽  
Erin Crisp ◽  
Shakir Rahman ◽  
Klaus Weber ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Chemical Etching ◽  
Silicon Wafers ◽  
Type Silicon ◽  
Metal Assisted Chemical Etching ◽  
Very High

scholarly journals Peculiarities of Photoluminescence in Porous Silicon Prepared by Metal-Assisted Chemical Etching

ISRN Optics ◽  
2012 ◽  
Vol 2012 ◽  
pp. 1-6 ◽  
Author(s):  
Igor Iatsunskyi ◽  
Valentin Smyntyna ◽  
Nykolai Pavlenko ◽  
Olga Sviridova
Keyword(s):  
Porous Silicon ◽  
Chemical Etching ◽  
Etching Time ◽  
Force Microscopy ◽  
Porous Layers ◽  
Atomic Force ◽  
Silicon Nanostructure ◽  
Metal Assisted Chemical Etching ◽  
Concentrated Solution ◽  
P Type

Photoluminescent (PL) porous layers were formed on p-type silicon by a metal-assisted chemical etching method using H2O2 as an oxidizing agent. Silver particles were deposited on the (100) Si surface prior to immersion in a solution of HF and H2O2. The morphology of the porous silicon (PS) layer formed by this method was investigated by atomic force microscopy (AFM). Depending on the metal-assisted chemical etching conditions, the macro- or microporous structures could be formed. Luminescence from metal-assisted chemically etched layers was measured. It was found that the PL intensity increases with increasing etching time. This behaviour is attributed to increase of the density of the silicon nanostructure. It was found the shift of PL peak to a green region with increasing of deposition time can be attributed to the change in porous morphology. Finally, the PL spectra of samples formed by high concentrated solution of AgNO3 showed two narrow peaks of emission at 520 and 550 nm. These peaks can be attributed to formation of AgF and AgF2 on a silicon surface.

Schottky contact barrier height enhancement on p-type silicon by wet chemical etching

1989 ◽  
Vol 48 (4) ◽  
pp. 391-395 ◽  
Author(s):  
G. A. Adegboyega ◽  
A. Poggi ◽  
E. Susi ◽  
A. Castaldini ◽  
A. Cavallini
Keyword(s):  
Barrier Height ◽  
Chemical Etching ◽  
Schottky Contact ◽  
Type Silicon ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
Contact Barrier ◽  
P Type
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