Vertically and Laterally Self-Aligned Double-Layer of Nanocrystals in Nanopatterned Dielectric Layer for Nanocrystal Floating Gate Memory Device

2019 ◽  
Vol 33 (9) ◽  
pp. 75-82 ◽  
Author(s):  
Quanli Hu ◽  
Tae-Kwang Eom ◽  
Soo-Hyun Kim ◽  
Hyung-Jun Kim ◽  
Hyun Ho Lee ◽  
...  
Keyword(s):  
Double Layer ◽  
Dielectric Layer ◽  
Memory Device ◽  
Floating Gate ◽  
Floating Gate Memory

Vertically and Laterally Self-Aligned Double Layer of Nanocrystals in Nanopatterned Dielectric Layer for Nanocrystal Floating Gate Memory Device

2010 ◽  
Vol 13 (11) ◽  
pp. H366 ◽  
Author(s):  
Quanli Hu ◽  
Tae-Kwang Eom ◽  
Soo-Hyun Kim ◽  
Hyung-Jun Kim ◽  
Hyun Ho Lee ◽  
...  
Keyword(s):  
Double Layer ◽  
Dielectric Layer ◽  
Memory Device ◽  
Floating Gate ◽  
Floating Gate Memory

MBE-grown Si and Si1−xGexquantum dots embedded within epitaxial Gd2O3on Si(111) substrate for floating gate memory device

2013 ◽  
Vol 24 (50) ◽  
pp. 505709 ◽  
Author(s):  
S Manna ◽  
R Aluguri ◽  
A Katiyar ◽  
S Das ◽  
A Laha ◽  
...  
Keyword(s):  
Memory Device ◽  
Floating Gate ◽  
Floating Gate Memory
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