Getter Effects in Low Oxygen and High Oxygen Czochralski Silicon Wafers

2019 ◽  
Vol 33 (11) ◽  
pp. 113-120 ◽  
Author(s):  
Gudrun Kissinger ◽  
Dawid Kot ◽  
Walter Häckl
Keyword(s):  
Silicon Wafers ◽  
High Oxygen ◽  
Low Oxygen ◽  
Czochralski Silicon

Precipitation Enhancement of "so Called" Defect-Free Czochralski Silicon Material

2005 ◽  
Vol 108-109 ◽  
pp. 11-16
Author(s):  
Timo Müller ◽  
G. Kissinger ◽  
P. Krottenthaler ◽  
C. Seuring ◽  
R. Wahlich ◽  
...  
Keyword(s):  
High Temperature ◽  
Thermal Treatments ◽  
Low Oxygen ◽  
Zone Formation ◽  
Czochralski Silicon ◽  
Silicon Material ◽  
Free Material ◽  
Precipitation Enhancement

Thermal treatments to enhance precipitation like RTA, ramp anneal and argon anneal were performed on low oxygen 300 mm wafers without vacancy or interstitial agglomerates (“so called” defect-free material). Best results were achieved using high temperature argon anneal leading to a homogenous BMD and denuded zone formation. Furthermore the getter efficiency was positively tested by intentional Ni-contamination. Concepts to overcome the slip danger like improved support geometries and nitrogen codoping were also evaluated and are seen to be beneficial.

Fine Temporal Mapping of Plasmodium Falciparum growth Inhibition in Hypoxic Sickle Cell Trait Erythrocytes

Blood ◽  
2017 ◽  
Vol 130 (Suppl_1) ◽  
pp. 924-924
Author(s):  
Natasha Archer ◽  
Nicole Petersen ◽  
Martha Clark ◽  
Manoj Duraisingh
Keyword(s):  
Flow Cytometry ◽  
Carbon Monoxide ◽  
Dna Replication ◽  
Oxygen Tension ◽  
Sickle Cell ◽  
Sickle Cell Trait ◽  
High Oxygen ◽  
Low Oxygen ◽  
Trophozoite Stage ◽  
Sickle Hemoglobin

Abstract Background: Despite the global acceptance of Haldane's hypothesis that individuals with sickle cell trait (AS) are protected against malaria, an exact mechanism of resistance remains unknown. Several theories to explain the resistance such as increased splenic destruction, impaired hemoglobin digestion, reduced cytoadherence and specific translocation of host specific microRNAs have been proposed. Here we carefully examine the influence of hypoxia and its relation to parasite cytoadherence and growth in AS and normal (AA) human red blood cells (RBCs). Materials and Methods: To assess the influence of oxygen tension on parasite proliferation in AS RBCs, we followed the proliferation of tightly synchronized P. falciparum within AS and AA RBCs at 1, 5, 10, and 17% oxygen by flow cytometry and microscopy. Carbon monoxide (CO) studies were performed by introducing 100% CO gas into our enclosed chamber system every 21 hours to prevent sickling at low oxygen. Results: Flow cytometry assessment of DNA content confirms the absence of DNA replication within parasites in AS erythrocytes at low oxygen, however normal DNA replication is observed in the presence of high oxygen tension and when CO is introduced at low oxygen. Moving parasites from high to low oxygen tension greatly influences the extent of parasite maturity; parasites moved at 16 and 20 hours post invasion (hpi) do not mature beyond that of the late ring/early trophozoite stage while parasites moved at 24, 28, and 32 hpi develop increasingly more merozoites. Conclusion: Here, we show that in hypoxic conditions parasites in AS erythrocytes stall at the late ring/early trophozoite stage and do not replicate their DNA. We also show that treatment of AS erythrocytes with high oxygen tension or carbon monoxide, a potent inhibitor of sickle hemoglobin polymerization, reverses this phenotype. We propose that the mechanism of AS protection is largely due to P.falciparum's inability to digest polymerized sickle hemoglobin once the parasite sequesters in the hypoxic microvasculature. This is likely a key driver of the reduced parasite densities observed in actual infections in AS individuals. Figure 1 Figure 1. Disclosures No relevant conflicts of interest to declare.

Investigation of stoichiometry of oxygen precipitates in Czochralski silicon wafers by means of EDX, EELS and FTIR spectroscopy

2016 ◽  
Vol 99 ◽  
pp. 231-235 ◽  
Author(s):  
D. Kot ◽  
G. Kissinger ◽  
M.A. Schubert ◽  
M. Klingsporn ◽  
A. Huber ◽  
...  
Keyword(s):  
Ftir Spectroscopy ◽  
Silicon Wafers ◽  
Czochralski Silicon ◽  
Oxygen Precipitates

Dependence of Mechanical Strength of Czochralski Silicon Wafers on the Temperature of Oxygen Precipitation Annealing

1997 ◽  
Vol 144 (3) ◽  
pp. 1111-1120 ◽  
Author(s):  
Koji Sueoka ◽  
Masanori Akatsuka ◽  
Hisashi Katahama ◽  
Naoshi Adachi
Keyword(s):  
Mechanical Strength ◽  
Silicon Wafers ◽  
Czochralski Silicon ◽  
Oxygen Precipitation

Gettering of surface and bulk impurities in Czochralski silicon wafers

1978 ◽  
Vol 32 (11) ◽  
pp. 747-749 ◽  
Author(s):  
G. A. Rozgonyi ◽  
C. W. Pearce
Keyword(s):  
Silicon Wafers ◽  
Czochralski Silicon

scholarly journals Comparison on mechanical properties of heavily phosphorus- and arsenic-doped Czochralski silicon wafers

AIP Advances ◽  
2018 ◽  
Vol 8 (4) ◽  
pp. 045301 ◽  
Author(s):  
Kang Yuan ◽  
Yuxin Sun ◽  
Yunhao Lu ◽  
Xingbo Liang ◽  
Daxi Tian ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Silicon Wafers ◽  
Czochralski Silicon
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