(Invited) Structural and Electrical Characterization of TiO2 and Al-Doped TiO2 Films on Ir Electrode for Next Generation DRAM Capacitor

2019 ◽  
Vol 33 (2) ◽  
pp. 111-115 ◽  
Author(s):  
Sora Han ◽  
Seong Keun Kim ◽  
Cheol Seong Hwang
2005 ◽  
Vol 87 (5) ◽  
pp. 052111 ◽  
Author(s):  
Yoshitaka Nakano ◽  
Takeshi Morikawa ◽  
Takeshi Ohwaki ◽  
Yasunori Taga

1993 ◽  
Vol 234 (1-2) ◽  
pp. 561-565 ◽  
Author(s):  
M. Gartner ◽  
C. Parlog ◽  
P. Osiceanu
Keyword(s):  
Sol Gel ◽  

2011 ◽  
Vol 1337 ◽  
Author(s):  
Roland Rosezin ◽  
Eike Linn ◽  
Lutz Nielen ◽  
Carsten Kügeler ◽  
Rainer Bruchhaus ◽  
...  

ABSTRACTIn this report, the fabrication and electrical characterization of fully vertically integrated complementary resistive switches (CRS), which consist of two anti-serially connected Cu-SiO2 memristive elements, is presented. The resulting CRS cells are initialized by a simple procedure and show high uniformity of resistance states afterwards. Furthermore, the CRS cells show high switching speeds below 50 ns, making them excellent building blocks for next generation non-volatile memory based on passive nanocrossbar arrays.


2018 ◽  
Vol 39 (12) ◽  
pp. 1940-1943 ◽  
Author(s):  
A. G. Martinez-Lopez ◽  
W. Y. Padron-Hernandez ◽  
D. Pourjafari ◽  
G. Oskam ◽  
G. Rodriguez-Gattorno ◽  
...  

2006 ◽  
Vol 515 (2) ◽  
pp. 674-677 ◽  
Author(s):  
I. Oja ◽  
A. Mere ◽  
M. Krunks ◽  
R. Nisumaa ◽  
C.-H. Solterbeck ◽  
...  

2016 ◽  
Vol 45 (7) ◽  
pp. 3795-3800
Author(s):  
Nguyen Manh Nghia ◽  
Nguyen Thi Hue ◽  
Ma Thi Anh Thu ◽  
Phung Thi Len ◽  
Vu Thi Thu ◽  
...  
Keyword(s):  

2018 ◽  
Vol 44 (17) ◽  
pp. 21114-21119 ◽  
Author(s):  
Wei Zhao ◽  
Linan He ◽  
Xianjin Feng ◽  
Hongdi Xiao ◽  
Caina Luan ◽  
...  
Keyword(s):  

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