Electrical Characterization of Schottky Diodes Based on Inkjet-Printed TiO2 Films

2018 ◽  
Vol 39 (12) ◽  
pp. 1940-1943 ◽  
Author(s):  
A. G. Martinez-Lopez ◽  
W. Y. Padron-Hernandez ◽  
D. Pourjafari ◽  
G. Oskam ◽  
G. Rodriguez-Gattorno ◽  
...  
Keyword(s):  
Schottky Diodes ◽  
Electrical Characterization ◽  
Tio2 Films

Temperature Stability of Breakdown Voltage on SiC Power Schottky Diodes with Different Barrier Heights

2005 ◽  
Vol 483-485 ◽  
pp. 933-936 ◽  
Author(s):  
R. Pierobon ◽  
G. Meneghesso ◽  
E. Zanoni ◽  
Fabrizio Roccaforte ◽  
Francesco La Via ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Schottky Diodes ◽  
Electrical Characterization ◽  
Temperature Stability ◽  
Voltage Versus ◽  
Good Thermal Stability ◽  
Barrier Heights ◽  
Schottky Rectifiers ◽  
Reverse Recovery Time

The static and dynamic electrical characterization of power Schottky rectifiers both with Ti and Ni2Si as Schottky metals having low negative coefficient of the breakdown voltage versus temperature will be presented in this paper. The values of the barrier height are respectively 1.28eV and 1.68eV, as extracted using the Tung’s model for inhomogeneous contacts from forward currentvoltage characteristics. These values were found to be in good agreement with those obtained by means of capacitance-voltage measurements. The breakdown voltage shows an almost linear dependence from the temperature for both types of devices. The extracted coefficients are respectively -0.08V/°C and -0.11V/°C, thus guarantying stable and reliable behaviour. Very short reverse recovery time at RT and at 125°C confirms the good thermal stability of these devices.

Electrical characterization of Au/n-GaN Schottky diodes

2004 ◽  
Vol 85 (1) ◽  
pp. 27-31 ◽  
Author(s):  
B Akkal ◽  
Z Benamara ◽  
H Abid ◽  
A Talbi ◽  
B Gruzza
Keyword(s):  
Schottky Diodes ◽  
Electrical Characterization

Electrical characterization of defects in SiCl4 plasma-etched n-GaAs and Pd Schottky diodes fabricated on it

1997 ◽  
Vol 71 (5) ◽  
pp. 668-670 ◽  
Author(s):  
F. D. Auret ◽  
G. Myburg ◽  
W. E. Meyer ◽  
P. N. K. Deenapanray ◽  
H. Nordhoff ◽  
...  
Keyword(s):  
Schottky Diodes ◽  
Electrical Characterization

Electrical Characterization of Ni-Silicide Schottky Contacts on SiC for High Performance Temperature Sensor

2015 ◽  
Vol 821-823 ◽  
pp. 436-439 ◽  
Author(s):  
Razvan Pascu ◽  
Gheorghe Pristavu ◽  
Gheorghe Brezeanu ◽  
Florin Draghici ◽  
Marian Badila ◽  
...  
Keyword(s):  
Barrier Height ◽  
Temperature Sensor ◽  
High Performance ◽  
Schottky Diodes ◽  
Schottky Contact ◽  
Electrical Characterization ◽  
Post Annealing ◽  
Schottky Device ◽  
Post Annealing Temperature

The electrical behavior and stability of a temperature sensor based on 4H-SiC Schottky diodes using Ni2Si as Schottky contact, are investigated. The ideality factor and the barrier height were found to be strongly dependent on the post-annealing temperature of the Ni contact (which lead to the formation of Ni2Si). A nearly ideal Schottky device, with the barrier height approaching the high value of1.7eV, and a slight temperature dependence, was obtained after an annealing atTA=800°C.This high barrier height proves that Ni2Si is suitable as Schottky contact for temperature sensors, able to reliably operate up to450°C. Sensor sensitivity levels between1.00mV/°Cand2.70 mV/°Chave been achieved.

Electrical characterization of band gap states in C-doped TiO2 films

2005 ◽  
Vol 87 (5) ◽  
pp. 052111 ◽  
Author(s):  
Yoshitaka Nakano ◽  
Takeshi Morikawa ◽  
Takeshi Ohwaki ◽  
Yasunori Taga
Keyword(s):  
Band Gap ◽  
Electrical Characterization ◽  
Tio2 Films ◽  
Doped Tio2 ◽  
Gap States
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