Low Voltage, High Performance Thin Film Transistor with HfInZnO Channel and HfO[sub 2] Gate Dielectric

2010 ◽  
Vol 13 (8) ◽  
pp. H274 ◽  
Author(s):  
Dae-Ho Son ◽  
Dae-Hwan Kim ◽  
Jung-Hye Kim ◽  
Shi-Joon Sung ◽  
Eun-Ae Jung ◽  
...  
2013 ◽  
Vol 138 (1) ◽  
pp. 1-4 ◽  
Author(s):  
Sungho Choi ◽  
Byung-Yoon Park ◽  
Sunho Jeong ◽  
Ji-Yoon Lee ◽  
Beyong-Hwan Ryu ◽  
...  

2006 ◽  
Vol 965 ◽  
Author(s):  
Hua-Chi Cheng ◽  
Yu-Rung Peng ◽  
Chao-An Chung ◽  
Wei-Hsin Hou ◽  
Zing-Way Pei

ABSTRACTWe have demonstrated organic thin-film transistor devices on synthesis paper of polypropylene (PP). All the fabrications are in solution-based processes except electrodes. As a barrier and smoother layer, photosensitive epoxy, 5μm-thich was coated on the paper substrate by using slit die coating. Polyvinyl phenol (PVP) was mixed with poly (melamine-co-formaldehyde) methylated, filmed by spin coating and ultraviolet (UV) cross linked to provide the gate dielectric layer. Using poly (3-hexylthiophene) as an active layer, a high-performance organic transistor with field effect mobility up to 0.006 cm2/ V s and an on/off ratio of 50 can be achieved. For the applications in flexible and disposable electronics, to built organic transistors on a cheap synthesis paper substrate can extremely lower the cost.


RSC Advances ◽  
2017 ◽  
Vol 7 (78) ◽  
pp. 49353-49360 ◽  
Author(s):  
Jenner H. L. Ngai ◽  
Johnny K. W. Ho ◽  
Rocky K. H. Chan ◽  
S. H. Cheung ◽  
Louis M. Leung ◽  
...  

Micron-size organolead perovskite crystals grown on insulating polymeric surfaces as gate dielectric materials for high performance thin film transistors.


2019 ◽  
Vol 16 (1) ◽  
pp. 22-34 ◽  
Author(s):  
Anand Sharma ◽  
Nitesh K. Chourasia ◽  
Vishwas Acharya ◽  
Nila Pal ◽  
Sajal Biring ◽  
...  

2020 ◽  
Vol 67 (4) ◽  
pp. 1751-1756
Author(s):  
Md. Mehedi Hasan ◽  
Md. Mobaidul Islam ◽  
Xiuling Li ◽  
Mingqian He ◽  
Robert Manley ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document