The Characterization of Bottom-gate Thin Film Transistors adapted Nanocrystalline Silicon as Active Layer by Catalytic CVD at Low Temperature
Keyword(s):
Keyword(s):
2020 ◽
Vol 46
(11)
◽
pp. 17295-17299
◽
Keyword(s):
Keyword(s):
2015 ◽
Vol 212
(7)
◽
pp. 1571-1577
◽
2007 ◽
Vol 28
(7)
◽
pp. 599-602
◽
2011 ◽
Vol 11
(2)
◽
pp. 171-175
◽
Keyword(s):
2014 ◽
Vol 43
(3)
◽
pp. 780-785
◽
Keyword(s):