Novel Noncontact Approach to Characterization of Mobility in Inversion Layers Using Corona Charging of Dielectric and SPV Monitoring of Sheet Resistance

2019 ◽  
Vol 28 (1) ◽  
pp. 33-41 ◽  
Author(s):  
JL. Everaert ◽  
E. Rosseel ◽  
A. Meszaros ◽  
K. Kis-Szabo ◽  
P. Tutto ◽  
...  
Keyword(s):  
Sheet Resistance ◽  
Corona Charging

Fabrication and characterization of flexible hybrid transparent electrodes with broadband transparency

2021 ◽  
pp. 2140023
Author(s):  
Keh-Moh Lin ◽  
Swapnil Shinde ◽  
Ru-Li Lin ◽  
Wen-Tse Hsiao ◽  
Pankaj Koinkar
Keyword(s):  
Sheet Resistance ◽  
Bending Test ◽  
Transparent Electrodes ◽  
Radio Frequency Sputtering ◽  
Light Region ◽  
Average Transmittance ◽  
Continuous State ◽  
Wide Range ◽  
Polyethylene Terephthalate Substrate

In this study, indium-zinc oxide (IZO)/silver (Ag)/IZO (ZAZ) flexible transparent electrodes were prepared on polyethylene terephthalate substrate using radio frequency sputtering technique. Experimental results showed that when the Ag film transited from semi-continuous state to continuous state, the ZAZ electrode exhibited high optoelectronic performance. The best ZAZ sample had a quite wide range of high transmittance and an average transmittance of 78.9% in visible light region, and sheet resistance of [Formula: see text]/sq and a Haacke Index of [Formula: see text]. The bending test revealed that the [Formula: see text] (change in sheet resistance) of ZAZ electrodes after 1000 bends was still less than 25% while the electrical properties of IZO films deteriorated after only 100 bending tests.

Corona Charging Characterization of Organic Photoreceptors

2007 ◽  
Vol 51 (6) ◽  
pp. 520 ◽  
Author(s):  
David S. Weiss ◽  
Bruce R. Benwood ◽  
Donald L. Troendle
Keyword(s):  
Corona Charging

Wafer Characterization of an Epi Reactor Using Sheet Resistance Mapping

1986 ◽  
Vol 71 ◽  
Author(s):  
Walter H. Johnson ◽  
W. Andrew Keenan ◽  
Alan K. Smith
Keyword(s):  
Process Control ◽  
Sheet Resistance ◽  
Integrated Circuit ◽  
Mapping Technique ◽  
Gas Flows ◽  
Epitaxial Silicon ◽  
Contour Maps ◽  
Silicon Growth ◽  
Indispensable Tool

AbstractSheet resistance mapping has become an indispensable tool in characterizing ion implanters for both integrated circuit manufacturers and equipment manufacturers. The sheet resistance mapping technique is now being extended into additional applications such as the characterization of metal deposition, CVD, and epitaxial silicon growth. This technique has become especially necessary with the advent of 150mm and 200mm wafers, where 5 or 9 site measurements cannot provide sufficient data essential for process control.In order to optimize the performance of an epi reactor it is necessary to control and characterize the gas flows and temperature distributions inside the reactor. The control of these variables is essential for thickness and resistivity uniformity in epi layers. This paper describes the use of sheet resistance profiles and contour maps to study the resistivity and thickness uniformity variations in an epi reactor. The sheet resistance maps allow for control of the epi process without requiring data from other test sources.This ensures real time process control for production, as well as very rapid feedback for maintenance while doing equipment repair.

Electrical Characterization of Residual Implantation-Induced Defects in the Vicinity of Laser-Annealed Implanted Ultrashallow Junctions

2006 ◽  
Vol 912 ◽  
Author(s):  
V. Gonda ◽  
S. Liu ◽  
T.L.M. Scholtes ◽  
L.K. Nanver
Keyword(s):  
Sheet Resistance ◽  
Laser Annealing ◽  
Electrical Characterization ◽  
Implantation Dose ◽  
Excimer Laser Annealing ◽  
Ultrashallow Junctions ◽  
Residual Damage ◽  
Doping Profiles ◽  
Induced Defects

AbstractUltrashallow junctions (USJ) were created by tilted 5 keV As+ implantation to a dose of 3x1015 cm−2 followed by excimer laser annealing (ELA). Sheet resistance and capacitances were measured in the background layer below the USJ. Results showed that sheet resistance was dependent on the laser energies in the close vicinity of these diodes. Doping profiles extracted from the capacitances indicated electrical deactivation here caused by the residual implantation defects. The extent and location of the residual damage is shown to be strongly dependent on the implantation dose and tilt angles, and also influenced by the laser annealing.

scholarly journals Characterization of drop-casted graphene/cellulose thin film on printing paper substrate

2020 ◽  
Vol 19 (2) ◽  
pp. 680
Author(s):  
Amirul Hadi Azmi ◽  
Shaharin Fadzli Abd Rahman ◽  
Mastura Shafinaz Zainal Abidin
Keyword(s):  
Thin Film ◽  
Sheet Resistance ◽  
Low Cost ◽  
Cellulose Solution ◽  
Wearable Electronics ◽  
Paper Substrate ◽  
Paper Electronics ◽  
Printing Paper ◽  
Printing Papers

Paper electronics is an emerging technology to implement flexible and wearable electronics devices via ink printing process. This paper evaluates the feasibility of using conventional printing paper for coating process with graphene/cellulose ink. 4 different types of regularly used conventional printing papers were used as substrates in this work. The conductive graphene ink was prepared through exfoliation of graphite in cellulose solution. The paper substrates surface morphology and sheet resistance of the drop-casted conductive ink on each paper were analyzed and discussed. Glossy paper was found to be suitable paper substrate for the printing of the formulated ink due to its low surface roughness of 16 nm. The value of sheet resistance of the graphene/cellulose thin film can be lowered to 4.11 kΩ/sq by applying multiple drops. This work suggests that conventional printing paper may offer solution for highly scalable and low-cost paper electronics.

Sheet resistance characterization of laser-doped lines on crystalline silicon wafers for photovoltaic applications

2011 ◽  
Vol 95 (3) ◽  
pp. 974-980 ◽  
Author(s):  
Kee Soon Wang ◽  
Budi S. Tjahjono ◽  
Johnson Wong ◽  
Ashraf Uddin ◽  
Stuart R. Wenham
Keyword(s):  
Sheet Resistance ◽  
Crystalline Silicon ◽  
Silicon Wafers ◽  
Photovoltaic Applications

Characterization of the Charging and Long Term Performance of Cytop Electret Layers for MEMS Applications

2008 ◽  
Vol 1134 ◽  
Author(s):  
Ulrich Bartsch ◽  
Joao Gaspar ◽  
Oliver Paul
Keyword(s):  
Corona Discharge ◽  
Silicon Substrates ◽  
Charging Station ◽  
Corona Charging ◽  
Initial Charge ◽  
Charge Stability ◽  
Long Term Performance ◽  
Term Performance

AbstractThis paper reports on the characterization of the charge stability of an amorphous fluoropolymer electret called Cytop. Cytop is a dissolved polymer material, compatible with standard micromachining fabrication technologies. In this study, Cytop layers are deposited and patterned on Pyrex and silicon substrates, followed by the electrical poling of the material by corona discharge using a customized charging station. The long-term performance of Cytop as an electret material is evaluated as a function of several relevant charging parameters. The results reveal highly stable layers, able to keep at least 92% of the initial charge 143 days after the corona charging stored at 23°C.

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