Ultra-High Vacuum Processing and Characterization of Chemically Functionalized Graphene

2019 ◽  
Vol 28 (5) ◽  
pp. 95-98
Author(s):  
Qing Hua Wang ◽  
Mark C. Hersam
Keyword(s):  
High Vacuum ◽  
Ultra High Vacuum ◽  
Functionalized Graphene ◽  
Vacuum Processing

Growth and Characterization of High Quality Si 1- x-y Ge x C y Alloy Grown by Ultra-High Vacuum Chemical Vapor Deposition

1999 ◽  
Vol 16 (10) ◽  
pp. 750-752 ◽  
Author(s):  
Zhen Qi ◽  
Jing-yun Huang ◽  
Zhi-zhen Ye ◽  
Huan-ming Lu ◽  
Wei-hua Chen ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Ultra High Vacuum ◽  
High Quality

Investigation of Epitaxial Overgrowth on Germanium Quantum Dots

2001 ◽  
Vol 676 ◽  
Author(s):  
David W. Greve ◽  
Qian Zhao
Keyword(s):  
Quantum Dots ◽  
Vapor Deposition ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Ultra High Vacuum ◽  
Reciprocal Space Mapping ◽  
Silicon Epitaxial Layer ◽  
Germanium Quantum Dots ◽  
Uniform Quantum

ABSTRACTWe report on the characterization of germanium quantum dots grown on silicon (001) substrates by ultra-high vacuum chemical vapor deposition (UHV/CVD). In many applications small and uniform quantum dots are required which must be overgrown by a silicon epitaxial layer. We report here on the effect of carbon predeposition from methylsilane on the dot size and uniformity. In addition, we use reciprocal space mapping to evaluate the qualityof epitaxial layers which overgrow the quantum dots. The results show some differences from previous reports on MBE-grown dots.

Characterization of Si pn junctions fabricated by direct wafer bonding in ultra-high vacuum

1998 ◽  
Vol 72 (9) ◽  
pp. 1095-1097 ◽  
Author(s):  
K. D. Hobart ◽  
M. E. Twigg ◽  
F. J. Kub ◽  
C. A. Desmond
Keyword(s):  
Wafer Bonding ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Direct Wafer Bonding ◽  
Pn Junctions

Preparation and spectroscopic characterization of a thin polymer film in ultra high vacuum: 2,5‐distyrylpyrazine

1991 ◽  
Vol 94 (4) ◽  
pp. 3235-3241 ◽  
Author(s):  
M. Abraham ◽  
J. Dütting ◽  
M. Schreck ◽  
R. Lege ◽  
S. Reich ◽  
...  
Keyword(s):  
Polymer Film ◽  
High Vacuum ◽  
Spectroscopic Characterization ◽  
Ultra High Vacuum ◽  
Thin Polymer Film ◽  
Thin Polymer

Gas-Tight Oxides - Reality or Just a Hope

2006 ◽  
Vol 522-523 ◽  
pp. 93-102 ◽  
Author(s):  
C. Anghel ◽  
Gunnar Hultquist ◽  
Qian Dong ◽  
J. Rundgren ◽  
Isao Saeki ◽  
...  
Keyword(s):  
Mathematical Model ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Gas Content ◽  
Molar Ratio ◽  
Protection Measure ◽  
Straightforward Method ◽  
Gas Tight ◽  
The Mathematical Model

A better understanding of the transport properties of gases in oxides is certainly very important in many applications. In the case of metals, a general protection measure against corrosion implies formation of a dense metal oxide scale. The scale should act as a barrier against gas transport and consequently it needs to be gas-tight. This is often assumed but rarely, if ever, confirmed. Hence there is a need for characterization of micro- and/or meso- pores formed especially during the early oxidation stage of metallic materials. This paper presents a novel and relatively straightforward method for characterization of gas release from an oxide previously equilibrated in a controlled atmosphere. The geometry of the sample is approximated to be a plate. The plate can be self-supporting or constitute a scale on a substrate. A mathematical model for calculation of diffusivity and gas content is given for this geometry. A desorption experiment, involving a mass spectrometer placed in ultra high vacuum, can be used to determine diffusivity and amount of gas released with aid of the mathematical model. The method is validated in measurements of diffusivity and solubility of He in quartz and applied in characterization of two Zroxides and one Fe oxide. From the outgassed amounts of water and nitrogen the H2O/N2 molar ratio can be used to estimate an effective pore size in oxides.

Ultra High Vacuum Processing: MBE

1988 ◽  
pp. 55-60
Author(s):  
J. P. Harbison ◽  
P. F. Liao ◽  
D. M. Hwang ◽  
E. Kapon ◽  
M. C. Tamargo ◽  
...  
Keyword(s):  
High Vacuum ◽  
Ultra High Vacuum ◽  
Vacuum Processing

A Comprehensive Study of Growth Techniques & Characterization of Epitaxial Ge1−xCx (111) Layers Grown Directly on Si (111) for MOS Applications

2008 ◽  
Vol 1068 ◽  
Author(s):  
Mustafa Jamil ◽  
Joseph P Donnelly ◽  
Se-Hoon Lee ◽  
Davood Shahrjerdi ◽  
Tarik Akyol ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Electron Mobility ◽  
Compressive Strain ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Ultra High Vacuum ◽  
High Electron ◽  
High Quality

ABSTRACTWe report the growth and characterization of thin germanium-carbon layers grown directly on Si (111) by ultra high-vacuum chemical vapor deposition. The thickness of the films studied is 8-20 nm. The incorporation of small amount (less than 0.5%) of carbon facilitates 2D growth of high quality Ge crystals grown directly on Si (111) without the need of a buffer layer. The Ge1−xCx layers were grown in ultra high vacuum chemical vapor deposition chamber, at a typical pressure of 50 mTorr and at a growth temperature of 440 °C. CH3GeH3 and GeH4 gases were used as the precursors for the epitaxial growth. The Ge1−xCx films were characterized by atomic force microscopy (AFM), secondary ion mass spectroscopy, x-ray diffraction, cross-sectional transmission electron microscopy and Raman spectroscopy. The AFM rms roughness of Ge1−xCx grown directly on Si (111) is only 0.34 nm, which is by far the lowest rms roughness of Ge films grown directly on Si (111). The dependence of growth rate and rms roughness of the films on temperature, C incorporation and deposition pressure was studied. In Ge, (111) surface orientation has the highest electron mobility; however, compressive strain in Ge degrades electron mobility. The technique of C incorporation leads to a low defect density Ge layer on Si (111), well above the critical thickness. Hence high quality crystalline layer of Ge directly on Si (111) can be achieved without compressive strain. The fabricated MOS capacitors exhibit well-behaved electrical characteristics. Thus demonstrate the feasibility of Ge1−xCx layers on Si (111) for future high-carrier-mobility MOS devices that take advantage of high electron mobility in Ge (111).

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