Ultra-thin SOI Layer Nanostructuring and Nanowire Transistor Formation for FemtoMole Electronic Biosensors

2019 ◽  
Vol 25 (10) ◽  
pp. 83-87 ◽  
Author(s):  
Olga Naumova ◽  
Vladimir P. Popov ◽  
Leonid Safronov ◽  
Boris Fomin ◽  
Dmitry Nasimov ◽  
...  
Keyword(s):  
Nanowire Transistor ◽  
Electronic Biosensors

scholarly journals Nanodevices Tend to Be Round

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 330
Author(s):  
Georges Pananakakis ◽  
Gérard Ghibaudo ◽  
Sorin Cristoloveanu
Keyword(s):  
Diffusion Process ◽  
Thermal Diffusion ◽  
Cross Section ◽  
Gate Voltage ◽  
Supportive Evidence ◽  
Inversion Mode ◽  
Nanowire Transistor ◽  
Junctionless Transistor ◽  
Simulation Results ◽  
Thermal Diffusion Process

Under several circumstances, a nanowire transistor with a square cross-section behaves as a circular. Taking the Gate-All-Around junctionless transistor as a primary example, we investigate the transition of the conductive region from square to circle-like. In this case, the metamorphosis is accentuated by smaller size, lower doping, and higher gate voltage. After defining the geometrical criterion for square-to-circle shift, simulation results are used to document the main consequences. This transition occurs naturally in nanowires thinner than 50 nm. The results are rather universal, and supportive evidence is gathered from inversion-mode Gate-All-Around (GAA) MOSFETs as well as from thermal diffusion process.

Junctionless Nanowire Transistor (JNT): Properties and design guidelines

2011 ◽  
Vol 65-66 ◽  
pp. 33-37 ◽  
Author(s):  
J.P. Colinge ◽  
A. Kranti ◽  
R. Yan ◽  
C.W. Lee ◽  
I. Ferain ◽  
...  
Keyword(s):  
Design Guidelines ◽  
Nanowire Transistor ◽  
Junctionless Nanowire Transistor
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