Low Temperature Two-Step Atomic Layer Deposition of Tantalum Nitride for Cu Diffusion Barrier

2009 ◽  
Vol 156 (11) ◽  
pp. H832 ◽  
Author(s):  
Jung-Dae Kwon ◽  
Seong-Jun Jeong ◽  
Jae-Wook Kang ◽  
Do-Geun Kim ◽  
Jong-Kuk Kim ◽  
...  
Keyword(s):  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Diffusion Barrier ◽  
Atomic Layer ◽  
Tantalum Nitride ◽  
Layer Deposition ◽  
Cu Diffusion Barrier

Deposition and Characteristics of Tantalum Nitride films by Plasma Assisted Atomic Layer Deposition as Cu Diffusion Barrier

2003 ◽  
Vol 766 ◽  
Author(s):  
Kyoung-Il Na ◽  
Se-Jong Park ◽  
Woo-Cheol Jeong ◽  
Se-Hoon Kim ◽  
Sung-Eun Boo ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Diffusion Barrier ◽  
Atomic Oxygen ◽  
Atomic Layer ◽  
Barrier Properties ◽  
Tantalum Nitride ◽  
Layer Deposition ◽  
Cu Diffusion Barrier ◽  
The Stability ◽  
Oxygen Impurities

AbstractFor a diffusion barrier against Cu, tantalum nitride (TaN) films have been successfully deposited by both conventional thermal atomic layer deposition (ALD) and plasma assisted atomic layer deposition (PAALD), using pentakis (ethylmethlyamino) tantalum (PEMAT) and ammonia (NH3) as precursors. The growth rate of PAALD TaN at substrate temperature 250° was slightly higher than that of ALD TaN (0.80 Å/cycle for PAALD and 0.75 Å/cycle for ALD). Density of TaN films deposited by PAALD was as high as 11.0 g/cm3, considerably higher compared to the value of 8.3 g/cm3 obtained by ALD. The N: Ta ratio for ALD TaN was 44: 37 in composition and the film contained approximately 8∼10 atomic % carbon and 11 atomic % oxygen impurities. On the other hand, the ratio for PAALD TaN layers was 47: 44 and the respective carbon and oxygen contents of TaN layers decreased to 3 atomic % and 4 atomic %. The stability of 10 nm-thick TaN films as a Cu diffusion barrier was tested through thermal annealing for 30 minutes in N2 ambient and characterized by XRD, which proves the PAALD deposited TaN film to maintain better barrier properties against Cu below 800°.

The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum-Based Thin Films for Copper Diffusion Barrier Applications

2003 ◽  
Vol 766 ◽  
Author(s):  
Degang Cheng ◽  
Eric T. Eisenbraun
Keyword(s):  
Atomic Layer Deposition ◽  
Diffusion Barrier ◽  
Hydrogen Plasma ◽  
Atomic Layer ◽  
Barrier Properties ◽  
Tantalum Nitride ◽  
Copper Metallization ◽  
X Ray ◽  
Layer Deposition ◽  
Electron Spectrometry

AbstractA plasma-enhanced atomic layer deposition (PEALD) process for the growth of tantalumbased compounds is employed in integration studies for advanced copper metallization on a 200- mm wafer cluster tool platform. This process employs terbutylimido tris(diethylamido)tantalum (TBTDET) as precursor and hydrogen plasma as the reducing agent at a temperature of 250°C. Auger electron spectrometry, X-ray photoelectron spectrometry, and X-ray diffraction analyses indicate that the deposited films are carbide rich, and possess electrical resistivity as low as 250νΔcm, significantly lower than that of tantalum nitride deposited by conventional ALD or CVD using TBTDET and ammonia. PEALD Ta(C)N also possesses a strong resistance to oxidation, and possesses diffusion barrier properties superior to those of thermally grown TaN.

Atomic Layer Deposition of Ultrathin TaN and Ternary Ta1-XAlXNy Films for Cu Diffusion Barrier Applications in Advanced Interconnects

2015 ◽  
Vol 69 (7) ◽  
pp. 181-189 ◽  
Author(s):  
S. Consiglio ◽  
K. Yu ◽  
S. Dey ◽  
K. Tapily ◽  
R. D. Clark ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Diffusion Barrier ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Cu Diffusion Barrier

Atomic layer deposition of amorphous Ni-Ta-N films for Cu diffusion barrier

2018 ◽  
Vol 36 (3) ◽  
pp. 031502
Author(s):  
Yong-Ping Wang ◽  
Zi-Jun Ding ◽  
Bao Zhu ◽  
Wen-Jun Liu ◽  
David Wei Zhang ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Diffusion Barrier ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Cu Diffusion Barrier

scholarly journals UV-enhanced atomic layer deposition of Al2O3 thin films at low temperature for gas-diffusion barriers

RSC Advances ◽  
2017 ◽  
Vol 7 (10) ◽  
pp. 5601-5609 ◽  
Author(s):  
Kwan Hyuck Yoon ◽  
Hongbum Kim ◽  
Yong-Eun Koo Lee ◽  
Nabeen K. Shrestha ◽  
Myung Mo Sung
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Diffusion Barrier ◽  
Deposition Temperature ◽  
Atomic Layer ◽  
Gas Diffusion ◽  
Diffusion Barriers ◽  
Layer Deposition ◽  
Low Deposition Temperature

We present UV-ALD as a promising approach to fabricate effective gas-diffusion barrier thin films at low deposition temperature (40 °C).

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