Electrical Characterization of Deep-Lying Donor Layers Created by Proton Implantation and Subsequent Annealing in N-Type Float Zone and Czochralski Silicon

2019 ◽  
Vol 25 (3) ◽  
pp. 55-65 ◽  
Author(s):  
Volodymyr Komarnitskyy ◽  
Pavel Hazdra
Keyword(s):  
Electrical Characterization ◽  
Subsequent Annealing ◽  
Czochralski Silicon ◽  
Float Zone ◽  
Proton Implantation

Electrical characterization of the slow boron oxygen defect component in Czochralski silicon

2015 ◽  
Vol 9 (12) ◽  
pp. 692-696 ◽  
Author(s):  
Tim Niewelt ◽  
Jonas Schön ◽  
Juliane Broisch ◽  
Wilhelm Warta ◽  
Martin Schubert
Keyword(s):  
Electrical Characterization ◽  
Oxygen Defect ◽  
Czochralski Silicon

n+/p Diodes Realized in SiC by Phosphorus Ion Implantation: Electrical Characterization as a Function of Temperature

2005 ◽  
Vol 483-485 ◽  
pp. 649-652 ◽  
Author(s):  
Mariaconcetta Canino ◽  
Antonio Castaldini ◽  
Anna Cavallini ◽  
Francesco Moscatelli ◽  
Roberta Nipoti ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Electrical Characterization ◽  
Surface States ◽  
High Energy ◽  
Subsequent Annealing ◽  
Energy Trap ◽  
Implantation Process

n+/p diodes have been realized by 300°C phosphorus ion implantation and subsequent annealing at 1300°C. An electrical characterization of the devices as well as a study of the defects introduced by the implantation process has been made. I-V measurements pointed out that the diodes maintain a good rectifying behavior up to 737K. DLTS analyses detected the presence of three traps, T2, T3 and T4, which are not due to the implantation process, and a high energy trap, T5, that could be related to the surface states at the Ni/SiC interface.

scholarly journals Electrical Characterization of Thermally Activated Defects in n-Type Float-Zone Silicon

2021 ◽  
Vol 11 (1) ◽  
pp. 26-35
Author(s):  
Yan Zhu ◽  
Fiacre Rougieux ◽  
Nicholas E. Grant ◽  
Joyce Ann T. De Guzman ◽  
John D. Murphy ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Thermally Activated ◽  
Float Zone

Structural and Electrical Characterization of Shaped Beam Laser Recrystallized Polysilicon on Amorphous Substrates

1981 ◽  
Vol 4 ◽  
Author(s):  
T. J. Stultz ◽  
J. F. Gibbons
Keyword(s):  
Grain Size ◽  
Electrical Characterization ◽  
Grain Structure ◽  
Electrical Characteristics ◽  
Shaped Beam ◽  
Beam Laser ◽  
Cw Laser ◽  
Amorphous Substrates ◽  
Circular Beam

ABSTRACTStructural and electrical characterization of laser recrystallized LPCVD silicon films on amorphous substrates using a shaped cw laser beam have been performed. In comparing the results to data obtained using a circular beam, it was found that a significant increase in grain size can be achieved and that the surface morphology of the shaped beam recrystallized material was much smoother. It was also found that whereas circular beam recrystallized material has a random grain structure, shaped beam material is highly oriented with a <100> texture. Finally the electrical characteristics of the recrystallized film were very good when measured in directions parallel to the grain boundaries.

Vapor Deposition Polymerization and Electrical Characterization of TPD Thin Films

2011 ◽  
Vol E94-C (2) ◽  
pp. 157-163 ◽  
Author(s):  
Masakazu MUROYAMA ◽  
Ayako TAJIRI ◽  
Kyoko ICHIDA ◽  
Seiji YOKOKURA ◽  
Kuniaki TANAKA ◽  
...  
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Electrical Characterization

Electrical Characterization of Different Failure Modes in Sub-100 nm Devices Using Nanoprobing Technique

2009 ◽  
Author(s):  
E. Hendarto ◽  
S.L. Toh ◽  
J. Sudijono ◽  
P.K. Tan ◽  
H. Tan ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Focused Ion Beam ◽  
Failure Modes ◽  
Ion Beam ◽  
Electrical Characterization ◽  
Nickel Silicide ◽  
Fault Isolation ◽  
Technology Nodes ◽  
Scanning Electron

Abstract The scanning electron microscope (SEM) based nanoprobing technique has established itself as an indispensable failure analysis (FA) technique as technology nodes continue to shrink according to Moore's Law. Although it has its share of disadvantages, SEM-based nanoprobing is often preferred because of its advantages over other FA techniques such as focused ion beam in fault isolation. This paper presents the effectiveness of the nanoprobing technique in isolating nanoscale defects in three different cases in sub-100 nm devices: soft-fail defect caused by asymmetrical nickel silicide (NiSi) formation, hard-fail defect caused by abnormal NiSi formation leading to contact-poly short, and isolation of resistive contact in a large electrical test structure. Results suggest that the SEM based nanoprobing technique is particularly useful in identifying causes of soft-fails and plays a very important role in investigating the cause of hard-fails and improving device yield.

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