SiGe SEG Growth for Buried Channels p-MOS Devices

2019 ◽  
Vol 25 (7) ◽  
pp. 201-210 ◽  
Author(s):  
Andriy Hikavyy ◽  
Roger Loo ◽  
Liesbeth Witters ◽  
Shinji Takeoka ◽  
Jef Geypen ◽  
...  
Keyword(s):  
Mos Devices ◽  
Buried Channels

Nanoprobing Applications with Capacitance-Voltage and Pulsed Current-Voltage Measurements for Device Failure Analysis

2015 ◽  
Author(s):  
LiLung Lai ◽  
Nan Li ◽  
Qi Zhang ◽  
Tim Bao ◽  
Robert Newton
Keyword(s):  
Failure Analysis ◽  
High Speed ◽  
Pulsed Current ◽  
Electrical Measurements ◽  
Device Failure ◽  
Mos Devices ◽  
Atomic Force ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Rising Time

Abstract Owing to the advancing progress of electrical measurements using SEM (Scanning Electron Microscope) or AFM (Atomic Force Microscope) based nanoprober systems on nanoscale devices in the modern semiconductor laboratory, we already have the capability to apply DC sweep for quasi-static I-V (Current-Voltage), high speed pulsing waveform for the dynamic I-V, and AC imposed for C-V (Capacitance-Voltage) analysis to the MOS devices. The available frequency is up to 100MHz at the current techniques. The specification of pulsed falling/rising time is around 10-1ns and the measurable capacitance can be available down to 50aF, for the nano-dimension down to 14nm. The mechanisms of dynamic applications are somewhat deeper than quasi-static current-voltage analysis. Regarding the operation, it is complicated for pulsing function but much easy for C-V. The effective FA (Failure Analysis) applications include the detection of resistive gate and analysis for abnormal channel doping issue.

Detection of Border Trap Density and Energy Distribution Along the Gate Dielectric Bulk of High-$\kappa$ Gated MOS Devices

2007 ◽  
Vol 28 (5) ◽  
pp. 432-435 ◽  
Author(s):  
Chun-Yuan Lu ◽  
Kuei-Shu Chang-Liao ◽  
Chun-Chang Lu ◽  
Ping-Hung Tsai ◽  
Tien-Ko Wang
Keyword(s):  
Energy Distribution ◽  
Gate Dielectric ◽  
Trap Density ◽  
Mos Devices

Influence of high-field electron injection regimes on modification of dielectric films of MOS devices

2010 ◽  
Vol 1 (2) ◽  
pp. 105-109
Author(s):  
V. V. Andreev ◽  
G. G. Bondarenko ◽  
A. A. Stolyarov ◽  
D. S. Vasyutin ◽  
A. M. Mikhal’kov
Keyword(s):  
High Field ◽  
Electron Injection ◽  
Dielectric Films ◽  
Mos Devices ◽  
Field Electron

Punchthrough limits in conventional and graded-drain MOS devices

1991 ◽  
Vol 22 (1) ◽  
pp. 23-29 ◽  
Author(s):  
D. Simeonov ◽  
E. Goranova
Keyword(s):  
Mos Devices
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