Cleaning-Free Deposition of Highly Crystallized Si Films on Plastic Film Substrates Using Pulsed-Plasma CVD under Near-Atmospheric Pressure

2019 ◽  
Vol 25 (5) ◽  
pp. 345-350
Author(s):  
Mitsutaka Matsumoto ◽  
Syun Ito ◽  
Yohei Inayoshi ◽  
Shogo Murashige ◽  
Hirokazu Fukidome ◽  
...  
Keyword(s):  
Atmospheric Pressure ◽  
Plastic Film ◽  
Pulsed Plasma ◽  
Plasma Cvd ◽  
Si Films

scholarly journals Low Temperature Growth of Polycrystalline Si Films Using Pulsed-Plasma CVD under Near Atmospheric Pressure

2008 ◽  
Vol 51 (10) ◽  
pp. 653-656
Author(s):  
Mitsutaka MATSUMOTO ◽  
Yasutake TOYOSHIMA ◽  
Setsuo NAKAJIMA ◽  
Maki SUEMITSU
Keyword(s):  
Low Temperature ◽  
Atmospheric Pressure ◽  
Pulsed Plasma ◽  
Plasma Cvd ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Si Films

scholarly journals Effect of Silane Concentration on Structure of the Poly-Si Films Prepared at High Rates by Atmospheric Pressure Plasma CVD

2005 ◽  
Vol 71 (11) ◽  
pp. 1393-1398
Author(s):  
Hiromasa OHMI ◽  
Hiroaki KAKIUCHI ◽  
Yasuji NAKAHAMA ◽  
Yusuke EBATA ◽  
Kiyoshi YASUTAKE ◽  
...  
Keyword(s):  
Atmospheric Pressure ◽  
Atmospheric Pressure Plasma ◽  
Plasma Cvd ◽  
Pressure Plasma ◽  
Si Films ◽  
Silane Concentration

Low Temperature Deposition of Si-based Thin Films on Plastic Films Using Pulsed-Discharge PECVD under Near Atmospheric Pressure

2008 ◽  
Vol 1066 ◽  
Author(s):  
Mitsutaka Matsumoto ◽  
Yohei Inayoshi ◽  
Maki Suemitsu ◽  
Setsuo Nakajima ◽  
Tsuyoshi Uehara ◽  
...  
Keyword(s):  
Low Temperature ◽  
Atmospheric Pressure ◽  
Short Pulse ◽  
Inert Gases ◽  
Pulsed Plasma ◽  
Pulsed Discharge ◽  
Plasma Cvd ◽  
Plastic Films ◽  
Temperature Deposition ◽  
Pet Films

ABSTRACTLow temperature (150 °C) deposition of doped and undoped polycrystalline Si (poly-Si) as well as SiNX films on polyethylene terephthalate (PET) films has been achieved with practical deposition rates by using pulsed-plasma CVD under near-atmospheric pressure. The precursor is SiH4 diluted in H2 for poly-Si while N2 has been additionally used for SiNx. No inert gases such as He was used. A short-pulse based power system has been employed to maintain a stable discharge in the near-atmospheric pressures. With this technique, deposition of poly-Si thin film with virtually no incubation layer is possible, which in the case of P-doped poly-Si shows a Hall mobility (μH) of 1.5 cm2/V·s.

Low-temperature formation of silicon nitride films using pulsed-plasma CVD under near atmospheric pressure

2008 ◽  
Vol 254 (19) ◽  
pp. 6208-6210 ◽  
Author(s):  
M. Matsumoto ◽  
Y. Inayoshi ◽  
M. Suemitsu ◽  
E. Miyamoto ◽  
T. Yara ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Low Temperature ◽  
Atmospheric Pressure ◽  
Pulsed Plasma ◽  
Plasma Cvd ◽  
Silicon Nitride Films

Deposition of Highly Crystallized Poly-Si Thin Films on Polymer Substrates Using Pulsed-Plasma CVD under Near-Atmospheric Pressure

2019 ◽  
Vol 3 (8) ◽  
pp. 119-124 ◽  
Author(s):  
Mitsutaka Matsumoto ◽  
Maki Suemitsu ◽  
Takuya Yara ◽  
Nakajima Setsuo ◽  
Uehara Tuyoshi ◽  
...  
Keyword(s):  
Thin Films ◽  
Atmospheric Pressure ◽  
Pulsed Plasma ◽  
Plasma Cvd ◽  
Polymer Substrates

Silicon Thin Film Growth by Pulsed Plasma CVD under Near-Atmospheric Pressure

2005 ◽  
Vol 891 ◽  
Author(s):  
Hirotatsu Kitabatake ◽  
Maki Suemitsu ◽  
Setsuo Nakajima ◽  
Tsuyoshi Uehara ◽  
Yasutake Toyoshima
Keyword(s):  
Atmospheric Pressure ◽  
Film Growth ◽  
Chemical Vapor ◽  
Pulsed Plasma ◽  
Silicon Thin Film ◽  
Cross Sectional ◽  
Raman Scattering Spectroscopy ◽  
Glass Substrates ◽  
Transmission Electron ◽  
Si Films

ABSTRACTSi Plasma-enhanced chemical vapor deposition (PECVD) at a near-atmospheric pressure (NAP) of 500 Torr has been conducted by using a pulsed-electric-field based NAP-PECVD system. At a growth temperature of 180°C, poly-Si films with a high Raman ratio of 7.4 are obtained on glass substrates, while epitaxial-like growth occurs when Si(100) substrates are employed, as confirmed by Raman-scattering spectroscopy, X-ray diffraction, and a cross-sectional transmission-electron microscopy.

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