The Effect of Periodic Relaxation on the Growth Behavior and Electrical Properties of Atomic Layer Deposited PbTiO3 Thin Film

2019 ◽  
Vol 19 (2) ◽  
pp. 815-828 ◽  
Author(s):  
Min Hyuk Park ◽  
Hyun Ju Lee ◽  
Gun Hwan Kim ◽  
Cheol Seong Hwang
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Atomic Layer ◽  
Growth Behavior ◽  
Pbtio3 Thin Film

The Effects of Oxidants on the Growth Behavior of PbTiO3 Thin Film by Atomic Layer Deposition

2019 ◽  
Vol 19 (2) ◽  
pp. 829-841 ◽  
Author(s):  
Hyun Ju Lee ◽  
Min Hyuk Park ◽  
Cheol Seong Hwang
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Growth Behavior ◽  
Pbtio3 Thin Film ◽  
Layer Deposition

scholarly journals Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition

Coatings ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 692
Author(s):  
Jong Hyeon Won ◽  
Seong Ho Han ◽  
Bo Keun Park ◽  
Taek-Mo Chung ◽  
Jeong Hwan Han
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Carrier Concentration ◽  
High Mobility ◽  
Impurity Scattering ◽  
Atomic Layer ◽  
Growth Behavior ◽  
Layer Deposition ◽  
Growth Feature ◽  
O2 Plasma

Herein, we performed a comparative study of plasma-enhanced atomic layer deposition (PEALD) of SnO2 films using Sn(dmamp)2 as the Sn source and either H2O plasma or O2 plasma as the oxygen source in a wide temperature range of 100–300 °C. Since the type of oxygen source employed in PEALD determines the growth behavior and resultant film properties, we investigated the growth feature of both SnO2 PEALD processes and the various chemical, structural, morphological, optical, and electrical properties of SnO2 films, depending on the oxygen source. SnO2 films from Sn(dmamp)2/H2O plasma (SH-SnO2) and Sn(dmamp)2/O2 plasma (SO-SnO2) showed self-limiting atomic layer deposition (ALD) growth behavior with growth rates of ~0.21 and 0.07–0.13 nm/cycle, respectively. SO-SnO2 films showed relatively larger grain structures than SH-SnO2 films at all temperatures. Interestingly, SH-SnO2 films grown at high temperatures of 250 and 300 °C presented porous rod-shaped surface morphology. SO-SnO2 films showed good electrical properties, such as high mobility up to 27 cm2 V−1·s−1 and high carrier concentration of ~1019 cm−3, whereas SH-SnO2 films exhibited poor Hall mobility of 0.3–1.4 cm2 V−1·s−1 and moderate carrier concentration of 1 × 1017–30 × 1017 cm−3. This may be attributed to the significant grain boundary and hydrogen impurity scattering.

Growth behavior of amorphous Ca and La modified PbTiO3 thin film

2008 ◽  
Vol 354 (45-46) ◽  
pp. 5014-5017
Author(s):  
W.L. Li ◽  
Q.G. Chi ◽  
J.M. Wang ◽  
W.D. Fei
Keyword(s):  
Thin Film ◽  
Growth Behavior ◽  
Pbtio3 Thin Film

scholarly journals Effect of Atomic Layer Deposited HfO2 thin Film Interfacial Layer on the Electrical Properties of Au/Ti/n-GaAs Schottky Diode

2021 ◽  
Author(s):  
Dilber Esra YILDIZ ◽  
A. Karabulut ◽  
I. Orak ◽  
A. Türüt
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Barrier Height ◽  
Forward Bias ◽  
Atomic Layer ◽  
Intersection Point ◽  
State Density ◽  
Mis Structure ◽  
Thin Film Layer ◽  
Mis Diode

Abstract The electrical properties of Au/Ti/HfO2/n-GaAs metal/insulating layer/semiconductor (MIS) contact structures were analyzed in detail by the help of capacitance-voltage (C-V) and conductance-voltage (G-V) measurements in the temperature range of 60–320 K. The HfO2 thin film layer was obtained by atomic layer deposition technique (ALD). The main electrical parameters such as ideality factor (n) and barrier height (ΦB0) were determined for Au/Ti/n-GaAs and Au/Ti/HfO2/n-GaAs diodes using current-voltage (I-V) measurement at 300 K. The values of these parameters are 1.07 and 0.77 eV for the reference (Au/Ti/n-GaAs) diode, and 1.30 and 0.94 eV for the Au/Ti/HfO2/n-GaAs MIS diode, respectively. An interfacial charge density value of Qss= 4.14x1012 Ccm− 2 for the MIS diode was calculated from the barrier height difference of ΔΦ=0.94-0.77=0.17 V. Depending on these results, the temperature dependent C-V and G-V plots of the device were also investigated. The series resistance (Rs), phase angle, the interface state density (Dit), the real impedance (Z') and imaginary impedance (Z'') were evaluated using admittance measurements. The C and G values increased, whereas (Z'') and Z decreased with increasing voltage at each temperature. An intersection point being independent of temperature in the G–V curves appeared at forward bias side (≈1.4 V), after this intersection point of the G–V plot, the G values decreased with increasing temperature at a given voltage. The intersection points in total (Z) versus V curves appeared at forward bias side (≈1.7 V). The Nyquist spectra was recorded for the MIS structure showing single semicircular arcs with different diameters depending on temperature.

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