Dependence of electrical properties on sulfur distribution in atomic-layer-deposited HfO2 thin film on an InP substrate

2019 ◽  
Vol 491 ◽  
pp. 83-87
Author(s):  
Hyun Soo Jin ◽  
Tae Jun Seok ◽  
Deok-Yong Cho ◽  
Tae Joo Park
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Atomic Layer ◽  
Sulfur Distribution ◽  
Inp Substrate

scholarly journals Effect of Atomic Layer Deposited HfO2 thin Film Interfacial Layer on the Electrical Properties of Au/Ti/n-GaAs Schottky Diode

2021 ◽  
Author(s):  
Dilber Esra YILDIZ ◽  
A. Karabulut ◽  
I. Orak ◽  
A. Türüt
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Barrier Height ◽  
Forward Bias ◽  
Atomic Layer ◽  
Intersection Point ◽  
State Density ◽  
Mis Structure ◽  
Thin Film Layer ◽  
Mis Diode

Abstract The electrical properties of Au/Ti/HfO2/n-GaAs metal/insulating layer/semiconductor (MIS) contact structures were analyzed in detail by the help of capacitance-voltage (C-V) and conductance-voltage (G-V) measurements in the temperature range of 60–320 K. The HfO2 thin film layer was obtained by atomic layer deposition technique (ALD). The main electrical parameters such as ideality factor (n) and barrier height (ΦB0) were determined for Au/Ti/n-GaAs and Au/Ti/HfO2/n-GaAs diodes using current-voltage (I-V) measurement at 300 K. The values of these parameters are 1.07 and 0.77 eV for the reference (Au/Ti/n-GaAs) diode, and 1.30 and 0.94 eV for the Au/Ti/HfO2/n-GaAs MIS diode, respectively. An interfacial charge density value of Qss= 4.14x1012 Ccm− 2 for the MIS diode was calculated from the barrier height difference of ΔΦ=0.94-0.77=0.17 V. Depending on these results, the temperature dependent C-V and G-V plots of the device were also investigated. The series resistance (Rs), phase angle, the interface state density (Dit), the real impedance (Z') and imaginary impedance (Z'') were evaluated using admittance measurements. The C and G values increased, whereas (Z'') and Z decreased with increasing voltage at each temperature. An intersection point being independent of temperature in the G–V curves appeared at forward bias side (≈1.4 V), after this intersection point of the G–V plot, the G values decreased with increasing temperature at a given voltage. The intersection points in total (Z) versus V curves appeared at forward bias side (≈1.7 V). The Nyquist spectra was recorded for the MIS structure showing single semicircular arcs with different diameters depending on temperature.

scholarly journals Effect of hydrogen diffusion in an In–Ga–Zn–O thin film transistor with an aluminum oxide gate insulator on its electrical properties

RSC Advances ◽  
2018 ◽  
Vol 8 (10) ◽  
pp. 5622-5628 ◽  
Author(s):  
Yunyong Nam ◽  
Hee-Ok Kim ◽  
Sung Haeng Cho ◽  
Sang-Hee Ko Park
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Aluminum Oxide ◽  
Thin Film Transistors ◽  
Hydrogen Diffusion ◽  
Thin Film Transistor ◽  
Atomic Layer ◽  
Gate Insulator ◽  
Layer Deposition ◽  
Amorphous Ingazno

We fabricated amorphous InGaZnO thin film transistors (a-IGZO TFTs) with aluminum oxide (Al2O3) as a gate insulator grown through atomic layer deposition (ALD) method at different deposition temperatures (Tdep).

The Effect of Periodic Relaxation on the Growth Behavior and Electrical Properties of Atomic Layer Deposited PbTiO3 Thin Film

2019 ◽  
Vol 19 (2) ◽  
pp. 815-828 ◽  
Author(s):  
Min Hyuk Park ◽  
Hyun Ju Lee ◽  
Gun Hwan Kim ◽  
Cheol Seong Hwang
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Atomic Layer ◽  
Growth Behavior ◽  
Pbtio3 Thin Film
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