The Effects of Oxidants on the Growth Behavior of PbTiO3 Thin Film by Atomic Layer Deposition

2019 ◽  
Vol 19 (2) ◽  
pp. 829-841 ◽  
Author(s):  
Hyun Ju Lee ◽  
Min Hyuk Park ◽  
Cheol Seong Hwang
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Growth Behavior ◽  
Pbtio3 Thin Film ◽  
Layer Deposition

scholarly journals Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition

Coatings ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 692
Author(s):  
Jong Hyeon Won ◽  
Seong Ho Han ◽  
Bo Keun Park ◽  
Taek-Mo Chung ◽  
Jeong Hwan Han
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Carrier Concentration ◽  
High Mobility ◽  
Impurity Scattering ◽  
Atomic Layer ◽  
Growth Behavior ◽  
Layer Deposition ◽  
Growth Feature ◽  
O2 Plasma

Herein, we performed a comparative study of plasma-enhanced atomic layer deposition (PEALD) of SnO2 films using Sn(dmamp)2 as the Sn source and either H2O plasma or O2 plasma as the oxygen source in a wide temperature range of 100–300 °C. Since the type of oxygen source employed in PEALD determines the growth behavior and resultant film properties, we investigated the growth feature of both SnO2 PEALD processes and the various chemical, structural, morphological, optical, and electrical properties of SnO2 films, depending on the oxygen source. SnO2 films from Sn(dmamp)2/H2O plasma (SH-SnO2) and Sn(dmamp)2/O2 plasma (SO-SnO2) showed self-limiting atomic layer deposition (ALD) growth behavior with growth rates of ~0.21 and 0.07–0.13 nm/cycle, respectively. SO-SnO2 films showed relatively larger grain structures than SH-SnO2 films at all temperatures. Interestingly, SH-SnO2 films grown at high temperatures of 250 and 300 °C presented porous rod-shaped surface morphology. SO-SnO2 films showed good electrical properties, such as high mobility up to 27 cm2 V−1·s−1 and high carrier concentration of ~1019 cm−3, whereas SH-SnO2 films exhibited poor Hall mobility of 0.3–1.4 cm2 V−1·s−1 and moderate carrier concentration of 1 × 1017–30 × 1017 cm−3. This may be attributed to the significant grain boundary and hydrogen impurity scattering.

Atomic Layer Deposition of Chalcogenides for Next-Generation Phase Change Memory

2021 ◽  
Author(s):  
Yoon Kyeung Lee ◽  
Chanyoung Yoo ◽  
Woohyun Kim ◽  
Jeongwoo Jeon ◽  
Cheol Seong Hwang
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Film Growth ◽  
Phase Change Memory ◽  
Film Surface ◽  
Atomic Layer ◽  
Thin Film Growth ◽  
Growth Technique ◽  
Layer Deposition ◽  
Change Memory

Atomic layer deposition (ALD) is a thin film growth technique that uses self-limiting, sequential reactions localized at the growing film surface. It guarantees exceptional conformality on high-aspect-ratio structures and controllability...

Chemical resistance of thin film materials based on metal oxides grown by atomic layer deposition

2013 ◽  
Vol 542 ◽  
pp. 219-224 ◽  
Author(s):  
Väino Sammelselg ◽  
Ivan Netšipailo ◽  
Aleks Aidla ◽  
Aivar Tarre ◽  
Lauri Aarik ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Metal Oxides ◽  
Chemical Resistance ◽  
Atomic Layer ◽  
Layer Deposition

scholarly journals High power nano-structured V2O5 thin film cathodes by atomic layer deposition

2014 ◽  
Vol 2 (36) ◽  
pp. 15044-15051 ◽  
Author(s):  
Erik Østreng ◽  
Knut Bjarne Gandrud ◽  
Yang Hu ◽  
Ola Nilsen ◽  
Helmer Fjellvåg
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
High Power ◽  
Atomic Layer ◽  
Li Ion Batteries ◽  
Layer Deposition ◽  
Li Ion

Atomic layer deposition (ALD) has been used to prepare nano-structured cathode films for Li-ion batteries of V2O5 from VO(thd)2 and ozone at 215 °C.

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