Controlled III/V Nanowire Growth by Selective-Area Vapour Phase Epitaxy

2019 ◽  
Vol 19 (5) ◽  
pp. 309-329
Author(s):  
Mirco Cantoro ◽  
Guy Brammertz ◽  
Olivier Richard ◽  
Hugo Bender ◽  
Francesca Clemente ◽  
...  
Keyword(s):  
Vapour Phase ◽  
Nanowire Growth ◽  
Vapour Phase Epitaxy ◽  
Selective Area

Monolithically integrated multi-wavelength laser by selective area growth with metal organic vapour phase epitaxy

2001 ◽  
Vol 37 (5) ◽  
pp. 296 ◽  
Author(s):  
T. Van Caenegem ◽  
D. Van Thourhout ◽  
M. Galarza ◽  
S. Verstuyft ◽  
I. Moerman ◽  
...  
Keyword(s):  
Vapour Phase ◽  
Selective Area Growth ◽  
Vapour Phase Epitaxy ◽  
Monolithically Integrated ◽  
Selective Area ◽  
Area Growth ◽  
Multi Wavelength ◽  
Metal Organic ◽  
Organic Vapour

Application of Selective Area MOVPE for DFB Gratings with Modulated Coupling Coefficient

1994 ◽  
Vol 340 ◽  
Author(s):  
Peer Tidemand-Petersson ◽  
Ole Albrektsen ◽  
Anders Møller-Larsen ◽  
Joseph Salzman
Keyword(s):  
Coupling Coefficient ◽  
Laser Cavity ◽  
Vapour Phase ◽  
Lateral Variation ◽  
Vapour Phase Epitaxy ◽  
Grating Pattern ◽  
Mask Layer ◽  
Selective Area ◽  
Metalorganic Vapour Phase Epitaxy ◽  
Reproducible Manner

ABSTRACTA new application of selective area metalorganic vapour phase epitaxy is demonstrated: fabrication of distributed feedback (DFB) gratings with sub-micron period and modulated coupling coefficient Kc. A SiO2 mask layer defines the InGaAs(P) grating pattern as well as the lateral variation in growth rate and, hence, thickness of the grating. In this way K can be varied along the laser cavity in a controlled and reproducible manner.

Stimulated emission from as-grown GaN hexagons by selective area growth hydride vapour phase epitaxy

1998 ◽  
Vol 34 (20) ◽  
pp. 1970 ◽  
Author(s):  
W.D. Herzog ◽  
B.B. Goldberg ◽  
M.S. Ünlü ◽  
R. Singh ◽  
F.P. Dabkowski
Keyword(s):  
Vapour Phase ◽  
Stimulated Emission ◽  
Selective Area Growth ◽  
Vapour Phase Epitaxy ◽  
Selective Area ◽  
Area Growth

scholarly journals Growth Uniformity in Selective Area Epitaxy of AlGaN/GaN Heterostructures for the Application in Semiconductor Devices

Electronics ◽  
2020 ◽  
Vol 9 (12) ◽  
pp. 2129
Author(s):  
Michał Stępniak ◽  
Mateusz Wośko ◽  
Joanna Prażmowska-Czajka ◽  
Andrzej Stafiniak ◽  
Dariusz Przybylski ◽  
...  
Keyword(s):  
Diffusion Length ◽  
Semiconductor Devices ◽  
Three Dimensional ◽  
Theoretical Models ◽  
Vapour Phase ◽  
High Electron ◽  
Device Structure ◽  
Vapour Phase Epitaxy ◽  
Window Width ◽  
Selective Area

The design of modern semiconductor devices often requires the fabrication of three-dimensional (3D) structures to integrate microelectronic components with photonic, micromechanical, or sensor systems within one semiconductor substrate. It is a technologically challenging task, as a strictly defined profile of the device structure is obligatory. This can be achieved either by chemical etching or selective deposition on a masked substrate. In this paper, the growth uniformity of AlGaN/GaN heterostructures during selective-area metalorganic vapour-phase epitaxy (SA-MOVPE) was studied. Such structures are typically used in order to fabricate high-electron-mobility transistors (HEMT). The semiconductor material was deposited through 200 μm long stripe-shaped open windows in a SiO2 mask on GaN/sapphire templates. The window width was varied from 5 μm to 160 μm, whereas mask width separating particular windows varied from 5 μm to 40 μm. The experiment was repeated for three samples differing in GaN layer thickness: 150 nm, 250 nm, and 500 nm. Based on theoretical models of the selective growth, a sufficiently uniform thickness of epitaxially grown AlGaN/GaN heterostructure has been achieved by selecting the window half-width that is smaller than the diffusion length of the precursor molecules. A Ga diffusion length of 15 μm was experimentally extracted by measuring the epitaxial material agglomeration in windows in the dielectric mask. Measurements were conducted while using optical profilometry.

One Step Nano-Selective Area Growth of Localized InAs/InP Quantum Dots For Single Photon Source Applications

2009 ◽  
Vol 1228 ◽  
Author(s):  
Noelle Gogneau ◽  
Luc Le Gratiet ◽  
Richard Hostein ◽  
Bruno Fain ◽  
Ludovic Largeau ◽  
...  
Keyword(s):  
Single Photon ◽  
Vapour Phase ◽  
Active Species ◽  
Selective Area Growth ◽  
Vapour Phase Epitaxy ◽  
Precise Control ◽  
Inhibition Of Growth ◽  
Selective Area ◽  
Area Growth ◽  
One Step

AbstractWe demonstrate the feasibility of a new approach of Nano Selective Area Growth (Nano-SAG) to precisely localize InAs/InP QDs, by low-pressure Metalorganic Vapour Phase Epitaxy (MOVPE). This approach is based on a partial patterning with a dielectric mask containing nano-openings. The two main advantages of MOVPE are: the important diffusion length of the active species and the inhibition of growth on the dielectric mask. We demonstrate the synthesis of localized nanostructures with high structural properties and the precise control of their dimensions at the nanometer scale. This allows in principle the precise control of the tunability of the emission length.

Growth characteristics of GaAs nanowires obtained by selective area metal–organic vapour-phase epitaxy

2008 ◽  
Vol 19 (26) ◽  
pp. 265604 ◽  
Author(s):  
Keitaro Ikejiri ◽  
Takuya Sato ◽  
Hiroatsu Yoshida ◽  
Kenji Hiruma ◽  
Junichi Motohisa ◽  
...  
Keyword(s):  
Vapour Phase ◽  
Growth Characteristics ◽  
Vapour Phase Epitaxy ◽  
Selective Area ◽  
Gaas Nanowires ◽  
Metal Organic ◽  
Organic Vapour
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