Stimulated emission from as-grown GaN hexagons by selective area growth hydride vapour phase epitaxy

1998 ◽  
Vol 34 (20) ◽  
pp. 1970 ◽  
Author(s):  
W.D. Herzog ◽  
B.B. Goldberg ◽  
M.S. Ünlü ◽  
R. Singh ◽  
F.P. Dabkowski
Keyword(s):  
Vapour Phase ◽  
Stimulated Emission ◽  
Selective Area Growth ◽  
Vapour Phase Epitaxy ◽  
Selective Area ◽  
Area Growth

Monolithically integrated multi-wavelength laser by selective area growth with metal organic vapour phase epitaxy

2001 ◽  
Vol 37 (5) ◽  
pp. 296 ◽  
Author(s):  
T. Van Caenegem ◽  
D. Van Thourhout ◽  
M. Galarza ◽  
S. Verstuyft ◽  
I. Moerman ◽  
...  
Keyword(s):  
Vapour Phase ◽  
Selective Area Growth ◽  
Vapour Phase Epitaxy ◽  
Monolithically Integrated ◽  
Selective Area ◽  
Area Growth ◽  
Multi Wavelength ◽  
Metal Organic ◽  
Organic Vapour

One Step Nano-Selective Area Growth of Localized InAs/InP Quantum Dots For Single Photon Source Applications

2009 ◽  
Vol 1228 ◽  
Author(s):  
Noelle Gogneau ◽  
Luc Le Gratiet ◽  
Richard Hostein ◽  
Bruno Fain ◽  
Ludovic Largeau ◽  
...  
Keyword(s):  
Single Photon ◽  
Vapour Phase ◽  
Active Species ◽  
Selective Area Growth ◽  
Vapour Phase Epitaxy ◽  
Precise Control ◽  
Inhibition Of Growth ◽  
Selective Area ◽  
Area Growth ◽  
One Step

AbstractWe demonstrate the feasibility of a new approach of Nano Selective Area Growth (Nano-SAG) to precisely localize InAs/InP QDs, by low-pressure Metalorganic Vapour Phase Epitaxy (MOVPE). This approach is based on a partial patterning with a dielectric mask containing nano-openings. The two main advantages of MOVPE are: the important diffusion length of the active species and the inhibition of growth on the dielectric mask. We demonstrate the synthesis of localized nanostructures with high structural properties and the precise control of their dimensions at the nanometer scale. This allows in principle the precise control of the tunability of the emission length.

Wafer-scale crack-free AlGaN on GaN through two-step selective-area growth for optically pumped stimulated emission

2016 ◽  
Vol 445 ◽  
pp. 78-83 ◽  
Author(s):  
Young-Ho Ko ◽  
Sung-Bum Bae ◽  
Sung-Bock Kim ◽  
Dong Churl Kim ◽  
Young Ahn Leem ◽  
...  
Keyword(s):  
Stimulated Emission ◽  
Selective Area Growth ◽  
Optically Pumped ◽  
Wafer Scale ◽  
Selective Area ◽  
Area Growth

scholarly journals Selective Area Growth of GaN Directly on (0001) Sapphire by the HVPE Technique

1998 ◽  
Vol 3 ◽  
Author(s):  
Raj Singh ◽  
Richard J. Barrett ◽  
John J. Gomes ◽  
Ferdynand P. Dabkowski ◽  
T.D. Moustakas
Keyword(s):  
Stimulated Emission ◽  
Hydride Vapor Phase Epitaxy ◽  
Buffer Layers ◽  
Epitaxial Lateral Overgrowth ◽  
Selective Area Growth ◽  
Growth Technique ◽  
Sapphire Substrates ◽  
Selective Area ◽  
Area Growth ◽  
Image Position

In this paper, we report on the selective area growth (SAG) of GaN directly on patterned c-plane sapphire substrates by hydride vapor phase epitaxy (HVPE). A number of researchers have reported that the HVPE growth technique, unlike the MBE and MOCVD methods, is capable of producing device quality GaN films without the need for any low temperature nucleation/buffer layers. The density of edge dislocations in these HVPE films decreases dramatically as the film thickness is increased, and the dislocation density values for thick films (> 10μm) are comparable to those reported for the best GaN films grown by other methods on c-sapphire. These advantages of the HVPE growth technique makes it possible to achieve high quality selective area growth of GaN directly on c-sapphire substrates.C-plane sapphire substrates were coated with PECVD SiO2 and photolithographically patterned with different size and shape openings. Subsequently, these patterned substrates were introduced in a horizontal, hot-wall quartz reactor for the GaN growth. It was observed that single crystal GaN growth was preferentially initiated in the openings in the oxide layer. This selective area growth was followed by epitaxial lateral overgrowth (ELO), leading to the formation of hexagonal GaN prisms terminated in smooth, vertical (100) facets. We have been successful in shearing these pyramid structures from the sapphire substrates as individual devices, which do not require any post-growth etching for feature definition. This procedure allows for the dramatic reduction of the process complexity and the duration and expense for GaN growth for device applications. Stimulated emission results on these self-formed optical cavities are also presented.

scholarly journals Selective-area growth and optical properties of GaN nanowires on patterned SiOx/Si substrates

2021 ◽  
Vol 1851 (1) ◽  
pp. 012006
Author(s):  
V O Gridchin ◽  
R R Reznik ◽  
K P Kotlyar ◽  
A S Dragunova ◽  
L N Dvoretckaia ◽  
...  
Keyword(s):  
Optical Properties ◽  
Selective Area Growth ◽  
Si Substrates ◽  
Gan Nanowires ◽  
Selective Area ◽  
Area Growth

scholarly journals Fully in situ Nb/InAs-nanowire Josephson junctions by selective-area growth and shadow evaporation

2021 ◽  
Author(s):  
Pujitha Perla ◽  
H. Aruni Fonseka ◽  
Patrick Zellekens ◽  
Russell Deacon ◽  
Yisong Han ◽  
...  
Keyword(s):  
Magnetic Fields ◽  
Josephson Junctions ◽  
Quantum Circuits ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth ◽  
Shadow Evaporation ◽  
Superconducting Quantum Circuits

Nb/InAs-nanowire Josephson junctions are fabricated in situ by a special shadow evaporation scheme for the superconducting Nb electrode. The junctions are interesting candidates for superconducting quantum circuits requiring large magnetic fields.

scholarly journals Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001)

AIP Advances ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 075013
Author(s):  
F. Meier ◽  
M. Protte ◽  
E. Baron ◽  
M. Feneberg ◽  
R. Goldhahn ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Gallium Nitride ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth
Sign in / Sign up

Export Citation Format

Share Document