Monolithically integrated multi-wavelength laser by selective area growth with metal organic vapour phase epitaxy

2001 ◽  
Vol 37 (5) ◽  
pp. 296 ◽  
Author(s):  
T. Van Caenegem ◽  
D. Van Thourhout ◽  
M. Galarza ◽  
S. Verstuyft ◽  
I. Moerman ◽  
...  
Keyword(s):  
Vapour Phase ◽  
Selective Area Growth ◽  
Vapour Phase Epitaxy ◽  
Monolithically Integrated ◽  
Selective Area ◽  
Area Growth ◽  
Multi Wavelength ◽  
Metal Organic ◽  
Organic Vapour

Stimulated emission from as-grown GaN hexagons by selective area growth hydride vapour phase epitaxy

1998 ◽  
Vol 34 (20) ◽  
pp. 1970 ◽  
Author(s):  
W.D. Herzog ◽  
B.B. Goldberg ◽  
M.S. Ünlü ◽  
R. Singh ◽  
F.P. Dabkowski
Keyword(s):  
Vapour Phase ◽  
Stimulated Emission ◽  
Selective Area Growth ◽  
Vapour Phase Epitaxy ◽  
Selective Area ◽  
Area Growth

One Step Nano-Selective Area Growth of Localized InAs/InP Quantum Dots For Single Photon Source Applications

2009 ◽  
Vol 1228 ◽  
Author(s):  
Noelle Gogneau ◽  
Luc Le Gratiet ◽  
Richard Hostein ◽  
Bruno Fain ◽  
Ludovic Largeau ◽  
...  
Keyword(s):  
Single Photon ◽  
Vapour Phase ◽  
Active Species ◽  
Selective Area Growth ◽  
Vapour Phase Epitaxy ◽  
Precise Control ◽  
Inhibition Of Growth ◽  
Selective Area ◽  
Area Growth ◽  
One Step

AbstractWe demonstrate the feasibility of a new approach of Nano Selective Area Growth (Nano-SAG) to precisely localize InAs/InP QDs, by low-pressure Metalorganic Vapour Phase Epitaxy (MOVPE). This approach is based on a partial patterning with a dielectric mask containing nano-openings. The two main advantages of MOVPE are: the important diffusion length of the active species and the inhibition of growth on the dielectric mask. We demonstrate the synthesis of localized nanostructures with high structural properties and the precise control of their dimensions at the nanometer scale. This allows in principle the precise control of the tunability of the emission length.

Growth characteristics of GaAs nanowires obtained by selective area metal–organic vapour-phase epitaxy

2008 ◽  
Vol 19 (26) ◽  
pp. 265604 ◽  
Author(s):  
Keitaro Ikejiri ◽  
Takuya Sato ◽  
Hiroatsu Yoshida ◽  
Kenji Hiruma ◽  
Junichi Motohisa ◽  
...  
Keyword(s):  
Vapour Phase ◽  
Growth Characteristics ◽  
Vapour Phase Epitaxy ◽  
Selective Area ◽  
Gaas Nanowires ◽  
Metal Organic ◽  
Organic Vapour

ZnSe metal organic vapour-phase epitaxy on GaAs: substrate preparation as the limiting factor in ZnSe growth

1998 ◽  
Vol 184-185 ◽  
pp. 1338 ◽  
Author(s):  
D.N. Gnoth ◽  
T.L. Ng ◽  
I.B. Poole ◽  
D.A. Evans ◽  
N. Maung ◽  
...  
Keyword(s):  
Gaas Substrate ◽  
Vapour Phase ◽  
Limiting Factor ◽  
Substrate Preparation ◽  
Vapour Phase Epitaxy ◽  
Metal Organic ◽  
Organic Vapour

EXCITON AND BIEXCITON PHENOMENA IN ZINC SULPHIDE EPILAYERS

1996 ◽  
Vol 05 (04) ◽  
pp. 621-629 ◽  
Author(s):  
J. VALENTA ◽  
D. GUENNANI ◽  
A. MANAR ◽  
P. GILLIOT
Keyword(s):  
Optical Gain ◽  
Vapour Phase ◽  
Zinc Sulphide ◽  
Detailed Characterization ◽  
Vapour Phase Epitaxy ◽  
Nanosecond Lasers ◽  
Metal Organic ◽  
Organic Vapour ◽  
Linear Optical Properties

The detailed characterization of metal organic vapour phase epitaxy grown ZnS layers on GaAs is the first step towards the study of their different non-linear optical properties performed with nanosecond lasers. Biexciton phenomena (with a binding energy of about 10 meV) are observed in photoluminescence-excitation and optical-gain spectra.

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