Chemical Vapor Deposition of Amorphous Cobalt–Phosphorus Alloy Films

2009 ◽  
Vol 12 (5) ◽  
pp. D36 ◽  
Author(s):  
Lucas B. Henderson ◽  
John G. Ekerdt
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Alloy Films ◽  
Phosphorus Alloy

Chemical vapor deposition of amorphous ruthenium–phosphorus alloy films

2007 ◽  
Vol 515 (13) ◽  
pp. 5298-5307 ◽  
Author(s):  
Jinhong Shin ◽  
Abdul Waheed ◽  
Wyatt A. Winkenwerder ◽  
Hyun-Woo Kim ◽  
Kyriacos Agapiou ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Alloy Films ◽  
Phosphorus Alloy

Composition Analysis of Ge Graded Si1-xGex Alloy Films by Capacitance-Voltage Method

2011 ◽  
Vol 383-390 ◽  
pp. 7613-7618
Author(s):  
Y. Yang ◽  
F. Yu ◽  
Ping Han ◽  
R.P. Ge ◽  
L. Yu
Keyword(s):  
Chemical Vapor Deposition ◽  
Band Gap ◽  
Vapor Deposition ◽  
Auger Electron ◽  
Chemical Vapor ◽  
Composition Analysis ◽  
Alloy Films ◽  
Capacitance Voltage ◽  
Capacitance Characteristics ◽  
Contact Barrier

Capacitance-voltage method was used to analyze composition of the Si1-xGex alloy films with a stochiometry gradient of Ge, which were epitaxially grown on Si (100) substrate by chemical vapor deposition. Using the capacitance characteristics of Si1-xGex/Si obtained by applying a reserve bias to the Hg electrode probe, the contact barrier height for Hg/Si1-xGexjunction and Si1-xGex/Si junction, and band gap of SSi1-xGex were estimated respectively. With the band gap of Si1-xGex, composition of Si1-xGex in Hg/Si1-xGex junction and Si1-xGex/Si junction were further obtained. Because analyzed Si1-xGex was formed through bilateral inter-diffusion of Si into the epilayer and Ge into the substrate during the deposition, Ge distribution from surface to substrate in Si1-xGex alloy films can be figured out by fitting to diffusion exponential function. The Ge distribution acquired this way was in accordance with the depth profile by auger electron spectrum.

Preparation of a-Si and a-Si-Alloy Films Using an Ion-Gun Chemical Vapor Deposition Method

1991 ◽  
Vol 30 (Part 1, No. 7) ◽  
pp. 1354-1359 ◽  
Author(s):  
Hisao Haku ◽  
Katsunobu Sayama ◽  
Tsugufumi Matsuoka ◽  
Shinya Tsuda ◽  
Shoichi Nakano ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Deposition Method ◽  
Alloy Films

Phosphorus Doping of Boron Carbon Alloys

1996 ◽  
Vol 452 ◽  
Author(s):  
Seong-Don Hwang ◽  
P. A. Dowben ◽  
A. Cheeseman ◽  
J. T. Spencer ◽  
D. N. Mcilroy
Keyword(s):  
Chemical Vapor Deposition ◽  
Band Gap ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Single Source ◽  
Phosphorus Doping ◽  
Alloy Films ◽  
Phosphorus Doped ◽  
Boron Carbon

AbstractPhosphorus doped boron carbon alloy films were made by chemical vapor deposition from a single source compound, dimeric chloro-phospha(III) carburane ((C2B10H10)2(PCl)2). Phosphorus doped B5C materials exhibit increases in the band gap from 0.9 eV to 2.6 eV.

Growth of Ga2(O,S)3 Alloy Films on YSZ Substrates by Mist Chemical Vapor Deposition

2019 ◽  
Author(s):  
Kazuaki Akaiwa ◽  
Tsubasa Hiroe ◽  
Moe Nagano ◽  
Tomoki Abe ◽  
Motohisa Kado ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Alloy Films
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