Phosphorus Doping of Boron Carbon Alloys

1996 ◽  
Vol 452 ◽  
Author(s):  
Seong-Don Hwang ◽  
P. A. Dowben ◽  
A. Cheeseman ◽  
J. T. Spencer ◽  
D. N. Mcilroy
Keyword(s):  
Chemical Vapor Deposition ◽  
Band Gap ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Single Source ◽  
Phosphorus Doping ◽  
Alloy Films ◽  
Phosphorus Doped ◽  
Boron Carbon

AbstractPhosphorus doped boron carbon alloy films were made by chemical vapor deposition from a single source compound, dimeric chloro-phospha(III) carburane ((C2B10H10)2(PCl)2). Phosphorus doped B5C materials exhibit increases in the band gap from 0.9 eV to 2.6 eV.

Composition Analysis of Ge Graded Si1-xGex Alloy Films by Capacitance-Voltage Method

2011 ◽  
Vol 383-390 ◽  
pp. 7613-7618
Author(s):  
Y. Yang ◽  
F. Yu ◽  
Ping Han ◽  
R.P. Ge ◽  
L. Yu
Keyword(s):  
Chemical Vapor Deposition ◽  
Band Gap ◽  
Vapor Deposition ◽  
Auger Electron ◽  
Chemical Vapor ◽  
Composition Analysis ◽  
Alloy Films ◽  
Capacitance Voltage ◽  
Capacitance Characteristics ◽  
Contact Barrier

Capacitance-voltage method was used to analyze composition of the Si1-xGex alloy films with a stochiometry gradient of Ge, which were epitaxially grown on Si (100) substrate by chemical vapor deposition. Using the capacitance characteristics of Si1-xGex/Si obtained by applying a reserve bias to the Hg electrode probe, the contact barrier height for Hg/Si1-xGexjunction and Si1-xGex/Si junction, and band gap of SSi1-xGex were estimated respectively. With the band gap of Si1-xGex, composition of Si1-xGex in Hg/Si1-xGex junction and Si1-xGex/Si junction were further obtained. Because analyzed Si1-xGex was formed through bilateral inter-diffusion of Si into the epilayer and Ge into the substrate during the deposition, Ge distribution from surface to substrate in Si1-xGex alloy films can be figured out by fitting to diffusion exponential function. The Ge distribution acquired this way was in accordance with the depth profile by auger electron spectrum.

scholarly journals Accessing new 2D semiconductors with optical band gap: synthesis of iron-intercalated titanium diselenide thin films via LPCVD

RSC Advances ◽  
2018 ◽  
Vol 8 (40) ◽  
pp. 22552-22558 ◽  
Author(s):  
Clara Sanchez-Perez ◽  
Caroline E. Knapp ◽  
Ross H. Colman ◽  
Carlos Sotelo-Vazquez ◽  
Raija Oilunkaniemi ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Band Gap ◽  
Vapor Deposition ◽  
Optical Band Gap ◽  
Chemical Vapor ◽  
Single Source ◽  
2D Semiconductors ◽  
Single Source Precursor ◽  
Pressure Chemical

Fe-doped TiSe2 thin-films were synthesized via low pressure chemical vapor deposition (LPCVD) of a single source precursor: [Fe(η5-C5H4Se)2Ti(η5-C5H5)2]2 (1).

scholarly journals Chemical vapor deposition of Pd/Cu alloy films from a new single source precursor

2015 ◽  
Vol 414 ◽  
pp. 130-134 ◽  
Author(s):  
Vladislav V. Krisyuk ◽  
Yuriy V. Shubin ◽  
François Senocq ◽  
Asiya E. Turgambaeva ◽  
Thomas Duguet ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Single Source ◽  
Alloy Films ◽  
Cu Alloy ◽  
Single Source Precursor

High Band Gap Nanocrystalline Tungsten Carbide (nc-WC) Thin Films Grown by Hot Wire Chemical Vapor Deposition (HW-CVD) Method

2018 ◽  
Vol 10 (3) ◽  
pp. 03001-1-03001-6 ◽  
Author(s):  
Bharat Gabhale ◽  
◽  
Ashok Jadhawar ◽  
Ajinkya Bhorde ◽  
Shruthi Nair ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Tungsten Carbide ◽  
Band Gap ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Cvd Method ◽  
High Band

In Situ Phosphorus-Doped Poly-Si by Low Pressure Chemical Vapor Deposition for Passivating Contacts

2020 ◽  
Author(s):  
Meric Firat ◽  
Hariharsudan Sivaramakrishnan Radhakrishnan ◽  
Maria Recaman Payo ◽  
Filip Duerinckx ◽  
Rajiv Sharma ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Pressure Chemical ◽  
Phosphorus Doped

Single source chemical vapor deposition (ssCVD) for highly luminescent inorganic halide perovskite films

2021 ◽  
Vol 119 (7) ◽  
pp. 071901
Author(s):  
Arthur Ishteev ◽  
Lev Luchnikov ◽  
Dmitry S. Muratov ◽  
Marina Voronova ◽  
Aaron Forde ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Single Source ◽  
Halide Perovskite

Aerosol-assisted chemical vapor deposition of WS2 from the single source precursor WS(S2)(S2CNEt2)2

2017 ◽  
Vol 53 (55) ◽  
pp. 7728-7731 ◽  
Author(s):  
Nathaniel E. Richey ◽  
Chandler Haines ◽  
Jessica L. Tami ◽  
Lisa McElwee-White
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Single Source ◽  
Single Source Precursor

WS(S2)(S2CNEt2)2 is a single source precursor for deposition of nanostructured WS2 above 350 °C.

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