scholarly journals Optical Transmission and Photoluminescence of Silicon Nitride Thin Films Implanted with Si Ions

2009 ◽  
Vol 12 (2) ◽  
pp. H38 ◽  
Author(s):  
Z. H. Cen ◽  
T. P. Chen ◽  
L. Ding ◽  
J. D. Ye ◽  
Y. Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Optical Transmission

Extraction of the Coefficient of Thermal Expansion of Thin Films from Buckled Membranes

1998 ◽  
Vol 546 ◽  
Author(s):  
V. Ziebartl ◽  
O. Paul ◽  
H. Baltes
Keyword(s):  
Thin Films ◽  
Finite Element ◽  
Thermal Expansion ◽  
Silicon Nitride ◽  
Excellent Agreement ◽  
Energy Minimization ◽  
Coefficient Of Thermal Expansion ◽  
Temperature Dependent ◽  
Minimization Method ◽  
Energy Minimization Method

AbstractWe report a new method to measure the temperature-dependent coefficient of thermal expansion α(T) of thin films. The method exploits the temperature dependent buckling of clamped square plates. This buckling was investigated numerically using an energy minimization method and finite element simulations. Both approaches show excellent agreement even far away from simple critical buckling. The numerical results were used to extract Cα(T) = α0+α1(T−T0 ) of PECVD silicon nitride between 20° and 140°C with α0 = (1.803±0.006)×10−6°C−1, α1 = (7.5±0.5)×10−9 °C−2, and T0 = 25°C.

Visible electroluminescence from silicon nanoclusters embedded in chlorinated silicon nitride thin films

2010 ◽  
Vol 518 (14) ◽  
pp. 3891-3893 ◽  
Author(s):  
J.C. Alonso ◽  
F.A. Pulgarín ◽  
B.M. Monroy ◽  
A. Benami ◽  
M. Bizarro ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Silicon Nanoclusters

Determination of Thermal Conductivity of Amorphous Silicon Thin Films via Non-Contacting Optical Probing

2006 ◽  
Vol 326-328 ◽  
pp. 689-692
Author(s):  
Seung Jae Moon
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Conductivity ◽  
Amorphous Silicon ◽  
Optical Transmission ◽  
Film Deposition ◽  
Transmission Measurement ◽  
Conductive Heat ◽  
Optical Transmission Measurement

The thermal conductivity of amorphous silicon (a-Si) thin films is determined by using the non-intrusive, in-situ optical transmission measurement. The thermal conductivity of a-Si is a key parameter in understanding the mechanism of the recrystallization of polysilicon (p-Si) during the laser annealing process to fabricate the thin film transistors with uniform characteristics which are used as switches in the active matrix liquid crystal displays. Since it is well known that the physical properties are dependent on the process parameters of the thin film deposition process, the thermal conductivity should be measured. The temperature dependence of the film complex refractive index is determined by spectroscopic ellipsometry. A nanosecond KrF excimer laser at the wavelength of 248 nm is used to raise the temperature of the thin films without melting of the thin film. In-situ transmission signal is obtained during the heating process. The acquired transmission signal is fitted with predictions obtained by coupling conductive heat transfer with multi-layer thin film optics in the optical transmission measurement.

ITO Thin Films on Silicon Buffer by Sol Gel Method

2006 ◽  
Vol 514-516 ◽  
pp. 1155-1160 ◽  
Author(s):  
Talaat Moussa Hammad
Keyword(s):  
Thin Films ◽  
Indium Tin Oxide ◽  
Optical Transmission ◽  
Sol Gel ◽  
Precursor Solution ◽  
Charge Carriers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ito Thin Films ◽  
Uv Visible

Sol gel indium tin oxide thin films (In: Sn = 90:10) were prepared by the sol-gel dipcoating process on silicon buffer substrate. The precursor solution was prepared by mixing SnCl2.2H2O and InCl3 dissolved in ethanol and acetic acid. The crystalline structure and grain orientation of ITO films were determined by X-ray diffraction. The surface morphology of the films was characterized by scanning electron microscope (SEM). Optical transmission and reflectance spectra of the films were analyzed by using a UV-visible spectrophotometer. The transport properties of majority charge carriers for these films were studied by Hall measurement. ITO thin film with electrical resistivity of 7.6 ×10-3 3.cm, Hall mobility of approximately 2 cm2(Vs)-1 and free carrier concentration of approximately 4.2 ×1020 cm-3 are obtained for films 100 nm thick films. The I-V curve measurement showed typical I-V characteristic behavior of sol gel ITO thin films.

In situ IR observation of photo-chemically deposited silicon nitride thin films

1991 ◽  
Vol 48-49 ◽  
pp. 409-413 ◽  
Author(s):  
T. Wadayama ◽  
T. Hihara ◽  
A. Hatta ◽  
W. Suëtaka
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
In Situ Ir

Dual mechanical behaviour of hydrogen in stressed silicon nitride thin films

2014 ◽  
Vol 116 (4) ◽  
pp. 043506 ◽  
Author(s):  
F. Volpi ◽  
M. Braccini ◽  
A. Devos ◽  
G. Raymond ◽  
A. Pasturel ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Mechanical Behaviour ◽  
Stressed Silicon

Characterization of Silicon Nitride Thin Films on Si and Overlayer Growth of Si and Ge

2001 ◽  
Vol 40 (Part 1, No. 6B) ◽  
pp. 4292-4298 ◽  
Author(s):  
Xue-Sen Wang ◽  
Zongquan Li ◽  
Lei Wang ◽  
Yanfang Hu ◽  
Guangjie Zhai ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Nitride

Microbridge Testing of Thin Films Under Small Deformation

1999 ◽  
Vol 594 ◽  
Author(s):  
T. Y. Zhang ◽  
Y. J. Su ◽  
C. F. Qian ◽  
M. H. Zhao ◽  
L. Q. Chen
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Silicon Nitride ◽  
Young’S Modulus ◽  
Young's Modulus ◽  
Chemical Vapor ◽  
Small Deformation ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Pressure Chemical

AbstractThe present work proposes a novel microbridge testing method to simultaneously evaluate the Young's modulus, residual stress of thin films under small deformation. Theoretic analysis and finite element calculation are conducted on microbridge deformation to provide a closed formula of deflection versus load, considering both substrate deformation and residual stress in the film. Silicon nitride films fabricated by low pressure chemical vapor deposition on silicon substrates are tested to demonstrate the proposed method. The results show that the Young's modulus and residual stress for the annealed silicon nitride film are respectively 202 GPa and 334.9 MPa.

Silicon Nitride Thin Films from SiCl[sub 4] Plus NH[sub 3]: Preparation and Properties

1968 ◽  
Vol 115 (5) ◽  
pp. 525 ◽  
Author(s):  
M. J. Grieco ◽  
F. L. Worthing ◽  
B. Schwartz
Keyword(s):  
Thin Films ◽  
Silicon Nitride
Sign in / Sign up

Export Citation Format

Share Document