RF Sputter Deposition of Indium Oxide - Iron Oxide Films for Photoelectrochemical Hydrogen Production

2019 ◽  
Vol 16 (7) ◽  
pp. 49-58 ◽  
Author(s):  
William B. Ingler ◽  
Grace Ong ◽  
Xunming Deng
Keyword(s):  
Iron Oxide ◽  
Hydrogen Production ◽  
Indium Oxide ◽  
Oxide Films ◽  
Sputter Deposition ◽  
Iron Oxide Films ◽  
Photoelectrochemical Hydrogen Production ◽  
Rf Sputter Deposition

RF Sputter Deposition of Indium Oxide / Indium Iron Oxide Thin Films for Photoelectrochemical Hydrogen Production

2009 ◽  
Vol 1171 ◽  
Author(s):  
William B Ingler ◽  
Abbasali Naseem
Keyword(s):  
Solar Cells ◽  
Iron Oxide ◽  
Hydrogen Production ◽  
Amorphous Silicon ◽  
Indium Oxide ◽  
Sputter Deposition ◽  
Photoelectrochemical Cells ◽  
Photoelectrochemical Hydrogen Production ◽  
Silicon Based ◽  
Immersion Type

AbstractThis project focuses on using indium oxide and indium iron oxide as an alloy to make a protective thin film (transparent, conductive, and corrosion resistant or TCCR) for amorphous silicon based solar cells, which are used in immersion-type photoelectrochemical cells for hydrogen production. From the work completed, the results indicate that samples made at 250 °C with 30 Watt of indium and 100 Watt of indium iron oxide, and a sputter deposition time of ninety minutes produced optimal results when deposited directly on single junction amorphous silicon solar cells. At 0.65 Volts, the best sample displays a maximum current density of 21.4 mA/cm2.

Indium oxide/indium iron oxide thin films for photoelectrochemical hydrogen production with a-silicon solar cells

2010 ◽  
Vol 25 (1) ◽  
pp. 25-31 ◽  
Author(s):  
William B. Ingler ◽  
Abbasali Naseem
Keyword(s):  
Solar Cells ◽  
Iron Oxide ◽  
Hydrogen Production ◽  
Amorphous Silicon ◽  
Indium Oxide ◽  
Photoelectrochemical Cells ◽  
Silicon Solar Cells ◽  
Photoelectrochemical Hydrogen Production ◽  
Silicon Based ◽  
Immersion Type

In this paper we focus on indium oxide and indium iron oxide as an alloy to fabricate a protective thin film (transparent, conductive, and corrosion resistant; TCCR) for amorphous silicon-based solar cells, which can be used in immersion-type photoelectrochemical cells for hydrogen production. From the work completed, the results indicate that samples made at 250 °C with indium and indium iron oxide targets powered at 30 and 100 W, respectively, and a sputter deposition time of 90 min produced optimal results when deposited directly on single-junction amorphous silicon solar cells. At 0.65 V (versus SCE), the best sample conditions display a maximum current density of 21.4 μA/cm2.

Designing micro-nano structure of anodized iron oxide films by metallographic adjustment on T8 steel

2021 ◽  
Author(s):  
Jinwei Cao ◽  
Qidi Gu ◽  
Nan Gao ◽  
Fei Chen ◽  
Congqian Cheng ◽  
...  
Keyword(s):  
Iron Oxide ◽  
Oxide Films ◽  
Nano Structure ◽  
Iron Oxide Films
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