Indium oxide/indium iron oxide thin films for photoelectrochemical hydrogen production with a-silicon solar cells

In this paper we focus on indium oxide and indium iron oxide as an alloy to fabricate a protective thin film (transparent, conductive, and corrosion resistant; TCCR) for amorphous silicon-based solar cells, which can be used in immersion-type photoelectrochemical cells for hydrogen production. From the work completed, the results indicate that samples made at 250 °C with indium and indium iron oxide targets powered at 30 and 100 W, respectively, and a sputter deposition time of 90 min produced optimal results when deposited directly on single-junction amorphous silicon solar cells. At 0.65 V (versus SCE), the best sample conditions display a maximum current density of 21.4 μA/cm2.