Novel Highly Volatile MOCVD Precursors for Ta2O5 and Nb2O5 Thin Films

2019 ◽  
Vol 16 (5) ◽  
pp. 243-251 ◽  
Author(s):  
Tadahiro Yotsuya ◽  
Hirokazu Chiba ◽  
Taishi Furukawa ◽  
Toshiki Yamamoto ◽  
Koichiro Inaba ◽  
...  
Keyword(s):  
Thin Films ◽  
Mocvd Precursors

Purposeful Chemical Design of Mocvd Precursors for Silicon-Based Systems

1988 ◽  
Vol 131 ◽  
Author(s):  
Bernard J. Aylett
Keyword(s):  
Thin Films ◽  
Design And Synthesis ◽  
Mild Conditions ◽  
Metal Silicides ◽  
Chemical Design ◽  
Mocvd Precursors ◽  
Silicon Based ◽  
Metal Bonds ◽  
Molecular Compounds

ABSTRACTIt is shown that volatile molecular compounds with silicon-metal bonds can act as effective MOCVD precursors to metal silicides, which aredeposited as thin films under relatively mild conditions. Strategies for the design and synthesis of such “prevenient” precursors are explored, and possible extensions of this approach are considered.

Heteroleptic Tin(IV) Aminoalkoxides and Aminofluoroalkoxides as MOCVD Precursors for Undoped and F-Doped SnO2 Thin Films

2020 ◽  
Vol 59 (10) ◽  
pp. 7167-7180 ◽  
Author(s):  
Alexandre Verchère ◽  
Shashank Mishra ◽  
Erwann Jeanneau ◽  
Hervé Guillon ◽  
Jean-Manuel Decams ◽  
...  
Keyword(s):  
Thin Films ◽  
Mocvd Precursors ◽  
Sno2 Thin Films

Synthesis and Characterization of Novel Self-Generating Liquid MOCVD Precursors for Thin Films of Zinc Oxide

2000 ◽  
Vol 12 (2) ◽  
pp. 548-554 ◽  
Author(s):  
Antonino Gulino ◽  
Francesco Castelli ◽  
Paolo Dapporto ◽  
Patrizia Rossi ◽  
Ignazio Fragalà
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Synthesis And Characterization ◽  
Mocvd Precursors

Synthesis and characterization of heteroleptic titanium MOCVD precursors for TiO2 thin films

2018 ◽  
Vol 47 (7) ◽  
pp. 2415-2421 ◽  
Author(s):  
Euk Hyun Kim ◽  
Min Hyuk Lim ◽  
Myoung Soo Lah ◽  
Sang Man Koo
Keyword(s):  
Thin Films ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Bidentate Ligands ◽  
Titanium Alkoxides ◽  
Tio2 Thin Films ◽  
Metal Organic ◽  
Mocvd Precursors ◽  
Organic Chemical Vapor Deposition

Heteroleptic titanium alkoxides with three different ligands, i.e., [Ti(OiPr)(X)(Y)] (X = tridentate, Y = bidentate ligands), were synthesized to find efficient metal organic chemical vapor deposition (MOCVD) precursors for TiO2 thin films.

Thin Films of ZrO2 for High-k Applications Employing Engineered Alkoxide- and Amide-Based MOCVD Precursors

2007 ◽  
Vol 13 (2-3) ◽  
pp. 98-104 ◽  
Author(s):  
R. Thomas ◽  
R. Bhakta ◽  
A. Milanov ◽  
A. Devi ◽  
P. Ehrhart
Keyword(s):  
Thin Films ◽  
High K ◽  
Mocvd Precursors

Thin Films of HfO[sub 2] for High-k Gate Oxide Applications from Engineered Alkoxide- and Amide-Based MOCVD Precursors

2007 ◽  
Vol 154 (3) ◽  
pp. G77 ◽  
Author(s):  
Reji Thomas ◽  
Eduard Rije ◽  
Peter Ehrhart ◽  
Andrian Milanov ◽  
Raghunandan Bhakta ◽  
...  
Keyword(s):  
Thin Films ◽  
Gate Oxide ◽  
High K ◽  
Mocvd Precursors

scholarly journals Synthesis and Characterization of Liquid MOCVD Precursors for Thin Films of Cadmium Oxide.

ChemInform ◽  
2003 ◽  
Vol 34 (10) ◽  
Author(s):  
Antonino Gulino ◽  
Paolo Dapporto ◽  
Patrizia Rossi ◽  
Ignazio Fragala
Keyword(s):  
Thin Films ◽  
Cadmium Oxide ◽  
Synthesis And Characterization ◽  
Mocvd Precursors

Synthesis and Characterization of Liquid MOCVD Precursors for Thin Films of Cadmium Oxide

2002 ◽  
Vol 14 (12) ◽  
pp. 4955-4962 ◽  
Author(s):  
Antonino Gulino ◽  
Paolo Dapporto ◽  
Patrizia Rossi ◽  
Ignazio Fragalà
Keyword(s):  
Thin Films ◽  
Cadmium Oxide ◽  
Synthesis And Characterization ◽  
Mocvd Precursors

New Low-melting Cadmium Precursors for the Detailed Study of Texture Effects in MOCVD Derived CdO Thin-Films

2002 ◽  
Vol 721 ◽  
Author(s):  
Andrew W. Metz ◽  
John R. Ireland ◽  
Jun Ni ◽  
Kenneth R. Poeppelmeier ◽  
Carl R. Kannewurf ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Hall Measurements ◽  
Crystalline Order ◽  
Glass Substrates ◽  
Grain Sizes ◽  
Mocvd Precursors ◽  
Cdo Thin Films ◽  
Cdo Films

AbstractA new series of low-melting, highly volatile, thermally and air-stable cadmium MOCVD precursors have been synthesized and characterized. Cd(hfa)2(N, N-DE-N', N'-DMEDA) has been successfully utilized in the growth of highly conductive and transparent CdO thin films. Hall measurements conducted on films deposited simultaneously on MgO (100) single crystal and Corning 1737F glass substrates reveal that the films on MgO have significantly enhanced carrier mobilities. Owing to similar grain sizes and carrier concentrations we attribute this effect to improved texture and associated improvements crystalline order. Conductivities as high as 8,590 S/cm are obtained which is to our knowledge the highest value reported to date for CdO films without aliovalent dopants.

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