Thin Films of HfO[sub 2] for High-k Gate Oxide Applications from Engineered Alkoxide- and Amide-Based MOCVD Precursors

2007 ◽  
Vol 154 (3) ◽  
pp. G77 ◽  
Author(s):  
Reji Thomas ◽  
Eduard Rije ◽  
Peter Ehrhart ◽  
Andrian Milanov ◽  
Raghunandan Bhakta ◽  
...  
Keyword(s):  
Thin Films ◽  
Gate Oxide ◽  
High K ◽  
Mocvd Precursors

Thin Films of ZrO2 for High-k Applications Employing Engineered Alkoxide- and Amide-Based MOCVD Precursors

2007 ◽  
Vol 13 (2-3) ◽  
pp. 98-104 ◽  
Author(s):  
R. Thomas ◽  
R. Bhakta ◽  
A. Milanov ◽  
A. Devi ◽  
P. Ehrhart
Keyword(s):  
Thin Films ◽  
High K ◽  
Mocvd Precursors

Development of high k/III-V (InGaAs, InAs, InSb) structures for future low power, high speed device applications

2013 ◽  
Vol 1538 ◽  
pp. 291-302
Author(s):  
Edward Yi Chang ◽  
Hai-Dang Trinh ◽  
Yueh-Chin Lin ◽  
Hiroshi Iwai ◽  
Yen-Ku Lin
Keyword(s):  
Low Power ◽  
Leakage Current ◽  
High Speed ◽  
High Performance ◽  
Gate Oxide ◽  
Chemical Cleaning ◽  
Low Leakage ◽  
Low Leakage Current ◽  
High K ◽  
Cleaning Methods

ABSTRACTIII-V compounds such as InGaAs, InAs, InSb have great potential for future low power high speed devices (such as MOSFETs, QWFETs, TFETs and NWFETs) application due to their high carrier mobility and drift velocity. The development of good quality high k gate oxide as well as high k/III-V interfaces is prerequisite to realize high performance working devices. Besides, the downscaling of the gate oxide into sub-nanometer while maintaining appropriate low gate leakage current is also needed. The lack of high quality III-V native oxides has obstructed the development of implementing III-V based devices on Si template. In this presentation, we will discuss our efforts to improve high k/III-V interfaces as well as high k oxide quality by using chemical cleaning methods including chemical solutions, precursors and high temperature gas treatments. The electrical properties of high k/InSb, InGaAs, InSb structures and their dependence on the thermal processes are also discussed. Finally, we will present the downscaling of the gate oxide into sub-nanometer scale while maintaining low leakage current and a good high k/III-V interface quality.

Characteristics of Nickel Oxide Modified Zr-Doped HfO2 High-k Thin Films

2021 ◽  
Vol MA2021-02 (12) ◽  
pp. 626-626
Author(s):  
Chia-Han Yang ◽  
Yue Kuo
Keyword(s):  
Thin Films ◽  
Nickel Oxide ◽  
High K

scholarly journals Atomic scale microstructures of high-k HfSiO thin films fabricated by magnetron sputtering

2012 ◽  
Vol 177 (10) ◽  
pp. 717-720 ◽  
Author(s):  
Etienne Talbot ◽  
Manuel Roussel ◽  
Larysa Khomenkova ◽  
Fabrice Gourbilleau ◽  
Philippe Pareige
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Atomic Scale ◽  
High K

Atomic Layer Deposition of Zirconium-Based High-k Metal Gate Oxide: Effect of Si Containing Zr Precursor

2015 ◽  
Vol 15 (1) ◽  
pp. 382-385
Author(s):  
Jun Hee Cho ◽  
Sang-Ick Lee ◽  
Jong Hyun Kim ◽  
Sang Jun Yim ◽  
Hyung Soo Shin ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Gate Oxide ◽  
Metal Gate ◽  
Layer Deposition ◽  
High K

High-k gate oxide for silicon heterostructure MOSFET devices

2006 ◽  
Vol 17 (9) ◽  
pp. 689-710 ◽  
Author(s):  
S. K. Ray ◽  
R. Mahapatra ◽  
S. Maikap
Keyword(s):  
Gate Oxide ◽  
High K

Investigation of strontium tantalate thin films for high-k gate dielectric applications

2006 ◽  
Vol 9 (6) ◽  
pp. 1102-1107 ◽  
Author(s):  
M. Silinskas ◽  
M. Lisker ◽  
B. Kalkofen ◽  
E.P. Burte
Keyword(s):  
Thin Films ◽  
Gate Dielectric ◽  
High K ◽  
High K Gate Dielectric
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