Trapezoidal Cross-Sectional Influence on FinFET Threshold Voltage and Corner Effects

2008 ◽  
Vol 155 (4) ◽  
pp. H213 ◽  
Author(s):  
Renato Giacomini ◽  
João Antonio Martino
Keyword(s):  
Threshold Voltage ◽  
Cross Sectional ◽  
Corner Effects

Roughness of TFT Gate Metallization and its Impact on Leakage, Threshold Voltage Shift and Mobility

2000 ◽  
Vol 609 ◽  
Author(s):  
A. Nathan ◽  
B. Park ◽  
A. Sazonov ◽  
R.V.R. Murthy
Keyword(s):  
Surface Roughness ◽  
Leakage Current ◽  
Threshold Voltage ◽  
High Surface ◽  
Gate Insulator ◽  
Large Shift ◽  
Cross Sectional ◽  
Threshold Voltage Shift ◽  
Small Shift ◽  
Low Leakage

ABSTRACTA comparison of the performance of aluminium (Al)-gated thin film transistors (TFTs) is presented in which we varied its sputter deposition conditions, such as deposition temperature, process pressure, and power. Gate films deposited at 30°C/5mTorr/300W yield TFT characteristics with low leakage current (~ 10 fA at low VDS), an ON/OFF ratio better than 108, and a mobility of 1.1 cm2/Vs. In contrast, films deposited at 150°C/10mTorr/400W, yield a significant degradation in leakage current (~ 1 pA) and mobility (0.77 cm2/Vs). The degradation stems from the high surface roughness of the a-SiNx:H gate insulator, and hence the TFT channel, caused by hillock formation on the Al gate. In addition, the high roughness leads to a correspondingly large shift in threshold voltage. After one-hour bias stress of +25 V applied to the gate, the shift in threshold voltage is ΔVT ~ 5 V, as compared to the small shift of ΔVT ~ 2.3 V associated with the smoother gate. Also included in our comparison is a TFT whose Al gate is now capped with 20 nm of molybdenum (Mo) to minimize propagation of the gate surface roughness to the active channel. Its cross sectional topography shows the interface smoothness to be as good or better, to yield improved leakage and stability characteristics.

ONO and Tunnel Oxide Characterization and Optimization for High Speed EEPROM Device

2012 ◽  
Author(s):  
Uda Hashim ◽  
Ramzan Mat Ayub
Keyword(s):  
Oxide Layer ◽  
Breakdown Voltage ◽  
Threshold Voltage ◽  
High Speed ◽  
Oxide Thickness ◽  
Cross Sectional ◽  
Non Volatile Memory ◽  
Scale Down ◽  
Overlap Area ◽  
Actual Size

Non-volatile memory processes, in particular the EEPROM process, is one of the hardest processes to be developed and the performance of the NVM products is normally judged from the programming speed and the density of the memory. The programming speed of the EEPROM cell depends critically on Tunnel Oxide Thickness (Xtun), Programming Voltage (Vp), ONO Thickness (Xpp) and Poly to Poly overlap Area (App). However, in this experiment only ONO and tunnel oxide layer are optimized and characterized. Three experiments were setup to improve the programming speed. The first experiment was to scale down the ONO layer thickness and followed by measurement of the threshold voltage and breakdown voltage of the new ONO thickness. The second and third experiments were setup to check the integrity of ONO and tunnel oxide layers respectively. The EEPROM cell was fabricated to observe the cross sectional of ONO and tunnel oxide layer. The characterization work on ONO and tunnel oxide layer to increase the programming speed of the memory cells of a 16k EEPROM device has been carried out. After scaling down the nitride of ONO layer from 160_ to 130_, the Vt program windows are further improved from 4.3V to 4.5V and from 0.7V to 0.9V for program high and program low operations, respectively. In this experiment, 130_ was found to be the best thickness for nitride of ONO layer. The breakdown voltage for ONO at 130_ of nitride thickness is 16.3V. The experiment revealed that the yields of ONO and tunnel oxide layer of the actual size on silicon were achieved at 98.7% and 99.92%, respectively. Key words: ONO; tunnel oxide; EEPROM; threshold voltage; programming speed; polysilicon; control gate; floating gate; select gate

Design of Triple Gate for Sub threshold Low Power applications

2017 ◽  
Vol 67 (2) ◽  
pp. 169
Author(s):  
Flavia Princess Nesamani ◽  
Geetanjali Raveendran ◽  
V.Lakshmi Prabha
Keyword(s):  
Titanium Nitride ◽  
Threshold Voltage ◽  
Double Gate ◽  
Subthreshold Slope ◽  
Metal Gate ◽  
Short Channel ◽  
Gate Electrodes ◽  
Time Fall ◽  
Corner Effects ◽  
Novel Design

<p>A novel design of triple gate MOSFET structure with metal gate and an underlap channel is proposed to minimise the short channel and corner effects. The gate metal used is titanium nitride as well as source and drain is diffused with titanium nitride so as to increase the drive capability of the device. To obtain subthreshold threshold voltage operation of the device, the gates are kept symmetric and the gate electrodes corner segments are rounded off to minimise leakage. The device shows significant improvement over conventional double gate FinFET and triple gate device without gate corner round off device in terms of Ion, Ioff ratio, DIBL, subthreshold slope, rise time, fall time.</p>

Automated Image Analysis Of Nuclear And Cytoplasmic Changes In Exfoliated Cells From Tracheas Treated With Carcinogen

1977 ◽  
Vol 35 ◽  
pp. 220-221
Author(s):  
S.F. Stinson ◽  
J.C. Lilga ◽  
M.B. Sporn
Keyword(s):  
Image Analysis ◽  
Pattern Analysis ◽  
Relative Proportion ◽  
Automated Image Analysis ◽  
Image Analyzer ◽  
Cross Sectional ◽  
Exfoliated Cells ◽  
Neoplastic Lesions ◽  
Analysis System ◽  
Morphologic Criterion

Increased nuclear size, resulting in an increase in the relative proportion of nuclear to cytoplasmic sizes, is an important morphologic criterion for the evaluation of neoplastic and pre-neoplastic cells. This paper describes investigations into the suitability of automated image analysis for quantitating changes in nuclear and cytoplasmic cross-sectional areas in exfoliated cells from tracheas treated with carcinogen.Neoplastic and pre-neoplastic lesions were induced in the tracheas of Syrian hamsters with the carcinogen N-methyl-N-nitrosourea. Cytology samples were collected intra-tracheally with a specially designed catheter (1) and stained by a modified Papanicolaou technique. Three cytology specimens were selected from animals with normal tracheas, 3 from animals with dysplastic changes, and 3 from animals with epidermoid carcinoma. One hundred randomly selected cells on each slide were analyzed with a Bausch and Lomb Pattern Analysis System automated image analyzer.

X-Ray Replication of Submicrometer Linewidth Patterns

1977 ◽  
Vol 35 ◽  
pp. 136-137
Author(s):  
Henry I. Smith ◽  
D.C. Flanders
Keyword(s):  
Electron Beam Lithography ◽  
Cross Sectional ◽  
X Ray ◽  
Electron Backscattering ◽  
Spatial Frequencies ◽  
Cross Sectional Profile ◽  
Carbon Foils ◽  
Sectional Profile ◽  
And Control ◽  
Soft Radiation

Scanning electron beam lithography has been used for a number of years to write submicrometer linewidth patterns in radiation sensitive films (resist films) on substrates. On semi-infinite substrates, electron backscattering severely limits the exposure latitude and control of cross-sectional profile for patterns having fundamental spatial frequencies below about 4000 Å(l),Recently, STEM'S have been used to write patterns with linewidths below 100 Å. To avoid the detrimental effects of electron backscattering however, the substrates had to be carbon foils about 100 Å thick (2,3). X-ray lithography using the very soft radiation in the range 10 - 50 Å avoids the problem of backscattering and thus permits one to replicate on semi-infinite substrates patterns with linewidths of the order of 1000 Å and less, and in addition provides means for controlling cross-sectional profiles. X-radiation in the range 4-10 Å on the other hand is appropriate for replicating patterns in the linewidth range above about 3000 Å, and thus is most appropriate for microelectronic applications (4 - 6).

A Field Emission System For Transmission Electron Microscopy

1973 ◽  
Vol 31 ◽  
pp. 298-299
Author(s):  
Michel Troyonal ◽  
Huei Pei Kuoal ◽  
Benjamin M. Siegelal
Keyword(s):  
Electron Microscope ◽  
Field Emission ◽  
Optical System ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Objective Lens ◽  
Electron Optical System ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Emission System

A field emission system for our experimental ultra high vacuum electron microscope has been designed, constructed and tested. The electron optical system is based on the prototype whose performance has already been reported. A cross-sectional schematic illustrating the field emission source, preaccelerator lens and accelerator is given in Fig. 1. This field emission system is designed to be used with an electron microscope operated at 100-150kV in the conventional transmission mode. The electron optical system used to control the imaging of the field emission beam on the specimen consists of a weak condenser lens and the pre-field of a strong objective lens. The pre-accelerator lens is an einzel lens and is operated together with the accelerator in the constant angular magnification mode (CAM).

Microstructural characterization of CoPtCr/Cr thin film disks by cross-section TEM and elongated probe micro-diffraction

1991 ◽  
Vol 49 ◽  
pp. 762-763
Author(s):  
M.A. Parker ◽  
K.E. Johnson ◽  
C. Hwang ◽  
A. Bermea
Keyword(s):  
Magnetic Recording ◽  
Electron Probe ◽  
Microstructural Characterization ◽  
Crystallographic Structure ◽  
Recording Media ◽  
Layer By Layer ◽  
Cross Sectional ◽  
New Techniques ◽  
Polished Side

We have reported the dependence of the magnetic and recording properties of CoPtCr recording media on the thickness of the Cr underlayer. It was inferred from XRD data that grain-to-grain epitaxy of the Cr with the CoPtCr was responsible for the interaction observed between these layers. However, no cross-sectional TEM (XTEM) work was performed to confirm this inference. In this paper, we report the application of new techniques for preparing XTEM specimens from actual magnetic recording disks, and for layer-by-layer micro-diffraction with an electron probe elongated parallel to the surface of the deposited structure which elucidate the effect of the crystallographic structure of the Cr on that of the CoPtCr.XTEM specimens were prepared from magnetic recording disks by modifying a technique used to prepare semiconductor specimens. After 3mm disks were prepared per the standard XTEM procedure, these disks were then lapped using a tripod polishing device. A grid with a single 1mmx2mm hole was then glued with M-bond 610 to the polished side of the disk.

Computer Reconstruction of the Cellular Architecture of the Daphnia Magna Optic Ganglion

1975 ◽  
Vol 33 ◽  
pp. 284-285
Author(s):  
E. R. Macagno ◽  
C. Levinthal
Keyword(s):  
Daphnia Magna ◽  
Genetic Background ◽  
Compound Eye ◽  
Synaptic Connectivity ◽  
Serial Sections ◽  
Cross Sectional ◽  
Small Crustacean ◽  
Optic Ganglion ◽  
Structural Invariance ◽  
High Degree

The optic ganglion of Daphnia Magna, a small crustacean that reproduces parthenogenetically contains about three hundred neurons: 110 neurons in the Lamina or anterior region and about 190 neurons in the Medulla or posterior region. The ganglion lies in the midplane of the organism and shows a high degree of left-right symmetry in its structures. The Lamina neurons form the first projection of the visual output from 176 retinula cells in the compound eye. In order to answer questions about structural invariance under constant genetic background, we have begun to reconstruct in detail the morphology and synaptic connectivity of various neurons in this ganglion from electron micrographs of serial sections (1). The ganglion is sectioned in a dorso-ventra1 direction so as to minimize the cross-sectional area photographed in each section. This area is about 60 μm x 120 μm, and hence most of the ganglion fit in a single 70 mm micrograph at the lowest magnification (685x) available on our Zeiss EM9-S.

Mass Determination by Direct Measurement of Electron Scattering

1975 ◽  
Vol 33 ◽  
pp. 240-241
Author(s):  
M. K. Lamvik ◽  
A. V. Crewe
Keyword(s):  
Cross Section ◽  
Electron Scattering ◽  
Mass Density ◽  
Variable Mass ◽  
Scattering Cross Section ◽  
Mass Determination ◽  
Number Density ◽  
Cross Sectional ◽  
Thin Slice ◽  
Scattering Cross

If a molecule or atom of material has molecular weight A, the number density of such units is given by n=Nρ/A, where N is Avogadro's number and ρ is the mass density of the material. The amount of scattering from each unit can be written by assigning an imaginary cross-sectional area σ to each unit. If the current I0 is incident on a thin slice of material of thickness z and the current I remains unscattered, then the scattering cross-section σ is defined by I=IOnσz. For a specimen that is not thin, the definition must be applied to each imaginary thin slice and the result I/I0 =exp(-nσz) is obtained by integrating over the whole thickness. It is useful to separate the variable mass-thickness w=ρz from the other factors to yield I/I0 =exp(-sw), where s=Nσ/A is the scattering cross-section per unit mass.

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