Oxidant Effect on Resistance Switching Characteristics of HfO2 film Grown Atomic Layer Deposition

2019 ◽  
Vol 11 (7) ◽  
pp. 61-66 ◽  
Author(s):  
In-Sung Park ◽  
Jooho Lee ◽  
Seungki Yoon ◽  
Keum Jee Jung ◽  
Sunwoo Lee ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Resistance Switching ◽  
Hfo2 Film ◽  
Layer Deposition ◽  
Switching Characteristics ◽  
Oxidant Effect

Resistance Switching Characteristics of HfO2 Film with Electrode for Resistance Change Random Access Memory

2007 ◽  
Vol 7 (11) ◽  
pp. 4139-4142 ◽  
Author(s):  
In-Sung Park ◽  
Joo-Ho Lee ◽  
Sunwoo Lee ◽  
Jinho Ahn
Keyword(s):  
Random Access ◽  
Atomic Layer ◽  
Resistance Switching ◽  
Dynamic Resistance ◽  
Access Memory ◽  
Hfo2 Film ◽  
Resistance Change ◽  
Layer Deposition ◽  
Metal Insulator Metal ◽  
Switching Characteristics

The electrode dependent resistance switching behaviors of amorphous HfO2 films grown by atomic layer deposition were systematically investigated. The low and high resistance states were successfully achieved for all the metal-insulator-metal resistor systems with Mo, Ru, and Pt symmetric electrodes. The characteristic reset and set voltages as well as the dynamic resistance ratio of the resistor device are strongly dependent on the electrode material with different work function. In addition, the different features for switching voltages with electrode are shown with annealing temperature.

Hysteresis-free HfO2 film grown by atomic layer deposition at low temperature

2011 ◽  
Vol 519 (22) ◽  
pp. 7723-7726 ◽  
Author(s):  
J. Shen ◽  
C.Y. Zhang ◽  
T.T. Xu ◽  
A.N. Jiang ◽  
Z.Y. Zhang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Hfo2 Film ◽  
Layer Deposition
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