Enhanced resistive switching characteristics of HfOx insulator fabricated by atomic layer deposition and La(NO3)3·6H2O solution as catalytic oxidant

2020 ◽  
Vol 38 (3) ◽  
pp. 032405
Author(s):  
Yong Chan Jung ◽  
In-Sung Park ◽  
Sejong Seong ◽  
Taehoon Lee ◽  
Seon Yong Kim ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Resistive Switching ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Switching Characteristics

Resistive switching properties of polycrystalline HfOxNyfilms by plasma-enhanced atomic layer deposition

2017 ◽  
Vol 56 (5) ◽  
pp. 050304 ◽  
Author(s):  
Jue Yu ◽  
Wei Huang ◽  
Chao Lu ◽  
Guangyang Lin ◽  
Cheng Li ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Resistive Switching ◽  
Atomic Layer ◽  
Layer Deposition

scholarly journals Understanding the Resistive Switching Phenomena of Stacked Al/Al2O3/Al Thin Films from the Dynamics of Conductive Filaments

Complexity ◽  
2017 ◽  
Vol 2017 ◽  
pp. 1-10 ◽  
Author(s):  
Joel Molina-Reyes ◽  
Luis Hernandez-Martinez
Keyword(s):  
Resistive Switching ◽  
Atomic Layer ◽  
Memory Device ◽  
Switching Behavior ◽  
Processing Temperature ◽  
Force Microscopy ◽  
Atomic Force ◽  
Layer Deposition ◽  
Metal Insulator Metal ◽  
Switching Characteristics

We present the resistive switching characteristics of Metal-Insulator-Metal (MIM) devices based on amorphous Al2O3 which is deposited by Atomic Layer Deposition (ALD). A maximum processing temperature for this memory device is 300°C, making it ideal for Back-End-of-Line (BEOL) processing. Although some variations in the forming, set, and reset voltages (VFORM, VSET, and VRESET) are obtained for many of the measured MIM devices (mainly due to roughness variations of the MIM interfaces as observed after atomic-force microscopy analysis), the memristor effect has been obtained after cyclic I-V measurements. These resistive transitions in the metal oxide occur for both bipolar and unipolar conditions, while the IOFF/ION ratio is around 4–6 orders of magnitude and is formed at gate voltages of Vg<4 V. In unipolar mode, a gradual reduction in VSET is observed and is related to combined (a) incomplete dissolution of conductive filaments (made of oxygen vacancies and metal ions) which leaves some residuals and (b) thickening of chemically reduced Al2O3 during localized Joule heating. This is important because, by analyzing the macroscopic resistive switching behavior of this MIM structure, we could indirectly relate it to microscopic and/or nanoscopic phenomena responsible for the physical mechanism upon which most of these devices operate.

Improvement of Resistive Switching Stability of HfO2 Films with Al Doping by Atomic Layer Deposition

2012 ◽  
Vol 15 (4) ◽  
pp. H88 ◽  
Author(s):  
Ching-Shiang Peng ◽  
Wen-Yuan Chang ◽  
Yi-Hsuan Lee ◽  
Ming-Ho Lin ◽  
Frederick Chen ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Resistive Switching ◽  
Atomic Layer ◽  
Al Doping ◽  
Layer Deposition ◽  
Switching Stability

Resistive switching of in situ and ex situ oxygen plasma treated ZnO thin film deposited by atomic layer deposition

2014 ◽  
Vol 116 (2) ◽  
pp. 663-669 ◽  
Author(s):  
Jian Zhang ◽  
Hui Yang ◽  
Qilong Zhang ◽  
Hao Jiang ◽  
Jikui Luo ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Resistive Switching ◽  
Oxygen Plasma ◽  
Atomic Layer ◽  
Ex Situ ◽  
Zno Thin Film ◽  
Layer Deposition

scholarly journals Reproducible and reliable resistive switching behaviors of AlOX/HfOX bilayer structures with Al electrode by atomic layer deposition

RSC Advances ◽  
2017 ◽  
Vol 7 (27) ◽  
pp. 16704-16708 ◽  
Author(s):  
Masoud Akbari ◽  
Min-Kyu Kim ◽  
Dongshin Kim ◽  
Jang-Sik Lee
Keyword(s):  
Atomic Layer Deposition ◽  
Resistive Switching ◽  
Atomic Layer ◽  
Layer Deposition

The resistive switching behaviors of AlOX/HfOX bilayer structures were investigated.

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