Bipolar resistive switching characteristics of low temperature grown ZnO thin films by plasma-enhanced atomic layer deposition

2013 ◽  
Vol 102 (1) ◽  
pp. 012113 ◽  
Author(s):  
Jian Zhang ◽  
Hui Yang ◽  
Qi-long Zhang ◽  
Shurong Dong ◽  
J. K. Luo
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Resistive Switching ◽  
Atomic Layer ◽  
Zno Thin Films ◽  
Bipolar Resistive Switching ◽  
Layer Deposition ◽  
Switching Characteristics

Extra-Low Temperature Growth of ZnO Thin Films by Atomic Layer Deposition

2008 ◽  
Vol 53 (9(5)) ◽  
pp. 2880-2883 ◽  
Author(s):  
E. Guziewicz ◽  
M. Godlewski ◽  
K. Kopalko ◽  
I. A. Kowalik ◽  
S. Yatsunenko ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Zno Thin Films ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Layer Deposition

Optimization of Copper Schottky Contacts on Nanocrystalline ZnO thin films by Atomic Layer Deposition

MRS Advances ◽  
2016 ◽  
Vol 1 (50) ◽  
pp. 3421-3427
Author(s):  
Mei Shen ◽  
Triratna P. Muneshwar ◽  
Ken Cadien ◽  
Ying Y. Tsui ◽  
Doug Barlage
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Thermionic Emission ◽  
Surface Oxidation ◽  
Atomic Layer ◽  
Zno Thin Films ◽  
Maximum Temperature ◽  
Thermal Reliability ◽  
Layer Deposition

ABSTRACTContact metallization is an essential obstacle for utilizing low temperature achievable polycrystalline ZnO in any discrete devices and integrated circuits. To develop ZnO based semiconductor devices with advanced feature of flexibility, transparency and compatibility with low temperature processing, rectifying junctions must be fully developed. In this work, nanoscale polycrystalline ZnO thin films are fabricated with via low temperature (<200 °C) by atomic layer deposition (ALD). A vertical structure of bottom Schottky metallized diode is developed with copper (Cu) sputtered in room temperature. A control of Cu surface oxidation is realized with an in-situ remote plasma treatment. The results indicate that preparation of the copper surface substantially affects the electrical behavior of the diode. Thermal reliability of Cu metallized Schottky diode is subsequently carried out by annealing up to a maximum temperature of 300 °C before it breaks. This work considers the current transport mechanism evolved deviating current vs voltage (I-V) characteristics from conventional thermionic emission theory.

Low-temperature atomic layer deposition of ZnO thin films: Control of crystallinity and orientation

2011 ◽  
Vol 519 (16) ◽  
pp. 5319-5322 ◽  
Author(s):  
Jari Malm ◽  
Elina Sahramo ◽  
Juho Perälä ◽  
Timo Sajavaara ◽  
Maarit Karppinen
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Zno Thin Films ◽  
Layer Deposition

Low-Temperature Growth of ZnO Thin Films by Atomic Layer Deposition

2007 ◽  
Vol 50 (6) ◽  
pp. 1716 ◽  
Author(s):  
E. H. Kim ◽  
D. H. Lee ◽  
B. H. Chung ◽  
H. S. Kim ◽  
Y. Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Zno Thin Films ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Layer Deposition

Low-temperature Atomic Layer Deposition of TiO2, Al2O3, and ZnO Thin Films

2011 ◽  
Vol 59 (2(1)) ◽  
pp. 452-457 ◽  
Author(s):  
Taewook Nam ◽  
Jae-Min Kim ◽  
Min-Kyu Kim ◽  
Hyungjun Kim ◽  
Woo-Hee Kim
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Zno Thin Films ◽  
Layer Deposition

scholarly journals Structural defects in ZnO thin films grown by atomic layer deposition at low temperatures

2021 ◽  
Vol 27 (S1) ◽  
pp. 2660-2662
Author(s):  
David Elam ◽  
Eduardo Ortega ◽  
Andrey Chabanov ◽  
Arturo Ponce
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Low Temperatures ◽  
Atomic Layer ◽  
Structural Defects ◽  
Zno Thin Films ◽  
Layer Deposition
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