Comprehensive Characterization of AlGaAs∕InGaAs∕GaAs Composite-Channel High-Electron Mobility Transistor

2007 ◽  
Vol 154 (11) ◽  
pp. H951 ◽  
Author(s):  
Yu-Shyan Lin ◽  
Bo-Yuan Chen ◽  
Ching-Hwa Ho
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Composite Channel ◽  
Comprehensive Characterization

scholarly journals A new small signal physical model of InP-based composite channel high electron mobility transistor

2006 ◽  
Vol 55 (7) ◽  
pp. 3617
Author(s):  
Li Xiao ◽  
Liu Liang ◽  
Zhang Hai-Ying ◽  
Yin Jun-Jian ◽  
Li Hai-Ou ◽  
...  
Keyword(s):  
Physical Model ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Small Signal ◽  
High Electron Mobility ◽  
Composite Channel

Growth and Characterization of Nitrogen‐Polar AlGaN/AlN Heterostructure for High‐Electron‐Mobility Transistor

2020 ◽  
Vol 257 (4) ◽  
pp. 1900589 ◽  
Author(s):  
Tadatoshi Ito ◽  
Ryota Sakamoto ◽  
Tatsuya Isono ◽  
Yongzhao Yao ◽  
Yukari Ishikawa ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility

Optical characterization of InAlAs/InGaAs metamorphic high-electron mobility transistor structures with tensile and compressive strain

2013 ◽  
Vol 529 ◽  
pp. 217-221 ◽  
Author(s):  
Ching-Hsiang Chan ◽  
Ching-Hwa Ho ◽  
Ming-Kai Chen ◽  
Yu-Shyan Lin ◽  
Ying-Sheng Huang ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Compressive Strain ◽  
High Electron Mobility Transistor ◽  
Optical Characterization ◽  
High Electron ◽  
High Electron Mobility

Characterization of AlGaN/GaN High Electron Mobility Transistor Grown on Silicon Carbide Devices with a Gate Length Lg = 0.15 μm

2011 ◽  
Vol 9 (6) ◽  
pp. 2178-2181 ◽  
Author(s):  
Malek Gassoumi ◽  
Mohamed Mongi Ben Salem ◽  
Salah Saadaoui ◽  
Walf Chikhaoui ◽  
Christophe Gaquière ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Gate Length ◽  
High Electron ◽  
High Electron Mobility

Improved In0.45Al0.55As/In0.45Ga0.55As/In0.65Ga0.35As Inverse Composite Channel Metamorphic High Electron Mobility Transistor

2005 ◽  
Vol 44 (8) ◽  
pp. 5903-5908 ◽  
Author(s):  
Yeong-Jia Chen ◽  
Ching-Sung Lee ◽  
Tzong-Bin Wang ◽  
Wei-Chou Hsu ◽  
Yen-Wei Chen ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Composite Channel
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