Growth and characterization of metamorphic In[sub x](AlGa)[sub 1−x]As/In[sub x]Ga[sub 1−x]As high electron mobility transistor material and devices with X=0.3–0.4

2000 ◽  
Vol 18 (3) ◽  
pp. 1638 ◽  
Author(s):  
W. E. Hoke ◽  
P. S. Lyman ◽  
C. S. Whelan ◽  
J. J. Mosca ◽  
A. Torabi ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility

Growth and Characterization of Nitrogen‐Polar AlGaN/AlN Heterostructure for High‐Electron‐Mobility Transistor

2020 ◽  
Vol 257 (4) ◽  
pp. 1900589 ◽  
Author(s):  
Tadatoshi Ito ◽  
Ryota Sakamoto ◽  
Tatsuya Isono ◽  
Yongzhao Yao ◽  
Yukari Ishikawa ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility

Optical characterization of InAlAs/InGaAs metamorphic high-electron mobility transistor structures with tensile and compressive strain

2013 ◽  
Vol 529 ◽  
pp. 217-221 ◽  
Author(s):  
Ching-Hsiang Chan ◽  
Ching-Hwa Ho ◽  
Ming-Kai Chen ◽  
Yu-Shyan Lin ◽  
Ying-Sheng Huang ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Compressive Strain ◽  
High Electron Mobility Transistor ◽  
Optical Characterization ◽  
High Electron ◽  
High Electron Mobility

Characterization of AlGaN/GaN High Electron Mobility Transistor Grown on Silicon Carbide Devices with a Gate Length Lg = 0.15 μm

2011 ◽  
Vol 9 (6) ◽  
pp. 2178-2181 ◽  
Author(s):  
Malek Gassoumi ◽  
Mohamed Mongi Ben Salem ◽  
Salah Saadaoui ◽  
Walf Chikhaoui ◽  
Christophe Gaquière ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Gate Length ◽  
High Electron ◽  
High Electron Mobility
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