Study of Structure and Electrical Characteristics of Silicon Oxynitride Layers Synthesized by Dual Ion Implantation in Silicon and their Annealing Behaviour

2019 ◽  
Vol 8 (1) ◽  
pp. 117-123
Author(s):  
Amar D. Yadav ◽  
Geeta Bhatt ◽  
Dr. S K. Dubey
Keyword(s):  
Ion Implantation ◽  
Silicon Oxynitride ◽  
Electrical Characteristics ◽  
Annealing Behaviour

Switching the electrical characteristics of TiO2 from n-type to p-type by ion implantation

2021 ◽  
pp. 150274
Author(s):  
Adriano Panepinto ◽  
Arnaud Krumpmann ◽  
David Cornil ◽  
Jérôme Cornil ◽  
Rony Snyders
Keyword(s):  
Ion Implantation ◽  
Electrical Characteristics ◽  
P Type

Scanned Electron Beam Annealing of Boron-Implanted Diodes

1980 ◽  
Vol 1 ◽  
Author(s):  
T. O. Yep ◽  
R. T. Fulks ◽  
R. A. Powell
Keyword(s):  
Electron Beam ◽  
Ion Implantation ◽  
Reverse Bias ◽  
Carrier Lifetime ◽  
Reverse Current ◽  
Electrical Activation ◽  
Electrical Characteristics ◽  
Low Resolution ◽  
Implantation Damage ◽  
Dopant Redistribution

ABSTRACTSuccessful annealing of p+ n arrays fabricated by ion-implantation of 11B (50 keV, 1 × 1014 cm-2) into Si (100 has been performed using a broadly rastered, low-resolution (0.25-inch diameter) electron beam. A complete 2" wafer could be uniformly annealed in ≃20 sec with high electrical activation (>75%) and small dopant redistribution (≃450 Å). Annealing resulted In p+n junctions characterized by low reverse current (≃4 nAcm-2 at 5V reverse bias) and higher carrier lifetime (80 μsec) over the entire 2" wafer. Based on the electrical characteristics of the diodes, we estimate that the electron beam anneal was able to remove ion implantation damage and leave an ordered substrate to a depth of 5.5 m below the layer junction.

Rapid Thermal Anneaung of Arsenic-Phosphorus(N+-N-) Double-Diffused Shallow Junctions

1985 ◽  
Vol 52 ◽  
Author(s):  
D. L. Kwong ◽  
N. S. Alvi ◽  
Y. H. Ku ◽  
A. W. Cheung
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Experimental Results ◽  
Silicon Substrates ◽  
Electrical Characteristics ◽  
Shallow Junctions

ABSTRACTDouble-diffused shallow junctions have been formed by ion implantation of both phosphorus and arsenic ions into silicon substrates and rapid thermal annealing. Experimental results on defect removal, impurity activation and redistribution, effects of Si preamorphization, and electrical characteristics of Ti-silicided junctions are presented.

Annealing behaviour of In impurities in SiC after ion implantation

1993 ◽  
pp. 207-210
Author(s):  
J. Meier ◽  
N. Achtziger ◽  
T. Licht ◽  
M. Uhrmacher ◽  
W. Witthuhn
Keyword(s):  
Ion Implantation ◽  
Annealing Behaviour

HI-ERDA, Micro-Raman and HRXRD studies of buried silicon oxynitride layers synthesized by dual ion implantation

Vacuum ◽  
2009 ◽  
Vol 83 (9) ◽  
pp. 1164-1168 ◽  
Author(s):  
Rucha H. Polji ◽  
A.D. Yadav ◽  
S.K. Dubey ◽  
Saif A. Khan ◽  
D.K. Avasthi ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Silicon Oxynitride

Low On-Resistance in 4H-SiC RESURF JFETs Fabricated with Dry Process for Implantation Metal Mask

2006 ◽  
Vol 527-529 ◽  
pp. 1203-1206 ◽  
Author(s):  
Takeyoshi Masuda ◽  
Kazuhiro Fujikawa ◽  
Kaoru Shibata ◽  
Hideto Tamaso ◽  
Satoshi Hatsukawa ◽  
...  
Keyword(s):  
Electric Field ◽  
Ion Implantation ◽  
Fabrication Process ◽  
Gate Length ◽  
Electrical Characteristics ◽  
Dry Process ◽  
Metal Mask ◽  
Surface Field ◽  
Reduced Surface

We fabricated 4H-SiC lateral JFETs with a reduced surface field (RESURF) structure, which can prevent the concentration of electric field at the edge of the gate metal [1]. Previously, we reported on the 4H-SiC RESURF JFET with a gate length (LG) of 10 μm [2]. Its specific on-resistance was 50 mΩcm2, which was still high. Therefore, a Ti/W layer was used as an ion implantation mask so as to decrease the thickness of the mask and to improve an accuracy of the device process. A RESURF JFET with the gate length (LG) of 3.0 μm was fabricated, and the specific on-resistance of 6.3 mΩcm2 was obtained. In this paper, the fabrication process and the electrical characteristics of the device are described.

Ultra-Shallow P+/N Junctions Formed by SiF4 Preamorphization and BF3 Implantation Using Plasma Immersion Ion Implantation

1992 ◽  
Vol 279 ◽  
Author(s):  
Erin C. Jones ◽  
Seongil Im ◽  
Nathan W. Cheung
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ion Implantation ◽  
Amorphous Region ◽  
Electrical Characteristics ◽  
Applied Bias ◽  
Rapid Thermal Anneal ◽  
Transmission Electron ◽  
Plasma Immersion Ion Implantation ◽  
Si Wafer

ABSTRACTSub-100 nm P+/N junctions are fabricated by implanting wafers in the plasma immersion ion implantation system (PIII). Ions from SiF4 and BF3 plasmas are implanted at energies from 4–6 keV and 2 keV, respectively. The amorphous region formed by SiF4 im-plantion is shown to be effective in slowing B diffusion during a 10 sec, 1060°C rapid thermal anneal step. Channeling and transmission electron microscopy studies show the recrys-tallized amorphous region is comparable in quality to an unprocessed Si wafer, and the implantation and annealing sequence has no detrimental effects on the physical or electrical characteristics of fabricated devices. Diodes have forward ideality factors of 1.05 to 1.06 and reverse leakage as low as 2 nA/cm2 in the diode bulk at -5 V applied bias.

Ion Damage and Annealing of Epitaxial Gallium Nitride and Comparison With GaAs/AlGaAs Materials

1995 ◽  
Vol 395 ◽  
Author(s):  
H.H. Tan ◽  
J.S. Williams ◽  
C. Yuan ◽  
S.J. Pearton
Keyword(s):  
Gallium Nitride ◽  
Ion Implantation ◽  
Liquid Nitrogen ◽  
Liquid Nitrogen Temperature ◽  
Annealing Behaviour ◽  
Al Content ◽  
Ion Channeling ◽  
Ion Damage ◽  
High Al Content

ABSTRACTIon damage build up has been measured by ion channeling in good quality epitaxial GaN films on sapphire. GaN is found to be remarkably resistant to ion damage, with extremely efficient dynamic defect annihilation occurring at liquid nitrogen temperature during ion implantation. When disorder does accumulate at doses around 1016cm−2 of 90 keV Si ions, the surface appears to be a strong sink for damage build up and possibly the nucleation of amorphous layers. Once ion disorder has been produced in GaN, it is extremely difficult to remove by annealing. GaN exhibits disordering and annealing behaviour which is somewhat similar to that in high Al-content AlGaAs.

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