Thermal Treatment of Ag/Ag-Doped (Ge[sub 45]Te[sub 55])[sub 0.7]N[sub 0.3] Electrolyte Films in Switching Characteristics of Programmable Metallization Cell Memory

Soo-Jin Lee; Soon-Gil Yoon; Sung-Min Yoon; Nam-Yeal Lee; Byoung-Gon Yu

doi:10.1149/1.2763960

Thermal Treatment of Ag/Ag-Doped (Ge[sub 45]Te[sub 55])[sub 0.7]N[sub 0.3] Electrolyte Films in Switching Characteristics of Programmable Metallization Cell Memory

Journal of The Electrochemical Society ◽

10.1149/1.2763960 ◽

2007 ◽

Vol 154 (10) ◽

pp. H853 ◽

Cited By ~ 1

Author(s):

Soo-Jin Lee ◽

Soon-Gil Yoon ◽

Sung-Min Yoon ◽

Nam-Yeal Lee ◽

Byoung-Gon Yu

Keyword(s):

Thermal Treatment ◽

Cell Memory ◽

Programmable Metallization Cell ◽

Switching Characteristics

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Switching Characteristics of Copper-Doped GexTe1-x Solid Electrolyte Films Incorporated by Nitrogen for Programmable Metallization Cell Memory Applications

Metals and Materials International ◽

10.3365/met.mat.2008.08.487 ◽

2008 ◽

Vol 14 (4) ◽

pp. 487-491

Author(s):

Soo-Jin Lee

Keyword(s):

Solid Electrolyte ◽

Cell Memory ◽

Programmable Metallization Cell ◽

Switching Characteristics ◽

Memory Applications

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Characterization of in situ diffusion of silver in Ge–Te amorphous films for programmable metallization cell memory applications

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2348884 ◽

2006 ◽

Vol 24 (5) ◽

pp. 2312 ◽

Cited By ~ 10

Author(s):

Soo-Jin Lee ◽

Soon-Gil Yoon ◽

Kyu-Jeong Choi ◽

Sang-Ouk Ryu ◽

Sung-Min Yoon ◽

...

Keyword(s):

Amorphous Films ◽

Cell Memory ◽

Programmable Metallization Cell ◽

In Situ Diffusion ◽

Memory Applications

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Nonvolatile programmable metallization cell memory switching element based on Ag-doped SbTe solid electrolyte

Applied Physics Letters ◽

10.1063/1.2789663 ◽

2007 ◽

Vol 91 (16) ◽

pp. 162107 ◽

Cited By ~ 5

Author(s):

Young Sam Park ◽

Seung Yun Lee ◽

Sung Min Yoon ◽

Soon Won Jung ◽

Byoung Gon Yu ◽

...

Keyword(s):

Solid Electrolyte ◽

Switching Element ◽

Cell Memory ◽

Programmable Metallization Cell ◽

Memory Switching

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Programmable metallization cell memory based on Ag-Ge-S and Cu-Ge-S solid electrolytes

Symposium Non-Volatile Memory Technology 2005. ◽

10.1109/nvmt.2005.1541405 ◽

2006 ◽

Cited By ~ 39

Author(s):

M.N. Kozicki ◽

M. Balakrishnan ◽

C. Gopalan ◽

C. Ratnakumar ◽

M. Mitkova

Keyword(s):

Solid Electrolytes ◽

Cell Memory ◽

Programmable Metallization Cell

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Investigation of Single Event Induced Soft Errors in Programmable Metallization Cell Memory

IEEE Transactions on Nuclear Science ◽

10.1109/tns.2014.2358235 ◽

2014 ◽

Vol 61 (6) ◽

pp. 3557-3563 ◽

Cited By ~ 12

Author(s):

Debayan Mahalanabis ◽

Hugh J. Barnaby ◽

Michael N. Kozicki ◽

Vineeth Bharadwaj ◽

Saba Rajabi

Keyword(s):

Soft Errors ◽

Single Event ◽

Cell Memory ◽

Programmable Metallization Cell

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High-Performance Programmable Metallization Cell Memory With the Pyramid-Structured Electrode

IEEE Electron Device Letters ◽

10.1109/led.2013.2275851 ◽

2013 ◽

Vol 34 (10) ◽

pp. 1244-1246 ◽

Cited By ~ 18

Author(s):

Yu-Chih Huang ◽

Wan-Lin Tsai ◽

Chia-Hsin Chou ◽

Chung-Yun Wan ◽

Ching Hsiao ◽

...

Keyword(s):

High Performance ◽

Cell Memory ◽

Programmable Metallization Cell

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Low voltage cycling of programmable metallization cell memory devices

Nanotechnology ◽

10.1088/0957-4484/22/25/254017 ◽

2011 ◽

Vol 22 (25) ◽

pp. 254017 ◽

Cited By ~ 14

Author(s):

D Kamalanathan ◽

A Akhavan ◽

M N Kozicki

Keyword(s):

Low Voltage ◽

Memory Devices ◽

Cell Memory ◽

Programmable Metallization Cell

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Characterization of Silver Saturated-Ge45Te55Solid Electrolyte Films Incorporated by Nitrogen for Programmable Metallization Cell Memory Device

Transactions on Electrical and Electronic Materials ◽

10.4313/teem.2007.8.2.073 ◽

2007 ◽

Vol 8 (2) ◽

pp. 73-78 ◽

Cited By ~ 1

Author(s):

Soo-Jin Lee ◽

Soon-Gil Yoon ◽

Sung-Min Yoon ◽

Byoung-Gon Yu

Keyword(s):

Memory Device ◽

Cell Memory ◽

Programmable Metallization Cell

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High-performance resistive switching characteristics of programmable metallization cell with oxidized Cu-Ti electrodes

Applied Physics Letters ◽

10.1063/1.4823818 ◽

2013 ◽

Vol 103 (14) ◽

pp. 142905 ◽

Cited By ~ 3

Author(s):

Yu-Chih Huang ◽

Chia-Hsin Chou ◽

Chan-Yu Liao ◽

Wan-Lin Tsai ◽

Huang-Chung Cheng

Keyword(s):

Resistive Switching ◽

High Performance ◽

Programmable Metallization Cell ◽

Switching Characteristics

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Effect of thermal treatment on resistive switching characteristics in Pt/Ti/Al2O3/Pt devices

Surface and Coatings Technology ◽

10.1016/j.surfcoat.2008.06.133 ◽

2008 ◽

Vol 203 (5-7) ◽

pp. 628-631 ◽

Cited By ~ 72

Author(s):

Chih-Yang Lin ◽

Dai-Ying Lee ◽

Sheng-Yi Wang ◽

Chun-Chieh Lin ◽

Tseung-Yuen Tseng

Keyword(s):

Thermal Treatment ◽

Resistive Switching ◽

Switching Characteristics

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