Nonvolatile programmable metallization cell memory switching element based on Ag-doped SbTe solid electrolyte

2007 ◽  
Vol 91 (16) ◽  
pp. 162107 ◽  
Author(s):  
Young Sam Park ◽  
Seung Yun Lee ◽  
Sung Min Yoon ◽  
Soon Won Jung ◽  
Byoung Gon Yu ◽  
...  
Keyword(s):  
Solid Electrolyte ◽  
Switching Element ◽  
Cell Memory ◽  
Programmable Metallization Cell ◽  
Memory Switching

Nitrogen doping effect in Ag-SbTe solid electrolyte for programmable metallisation cell memory

2012 ◽  
Vol 48 (8) ◽  
pp. 458 ◽  
Author(s):  
Young-Sam Park ◽  
Seung-Yun Lee ◽  
Moongyu Jang ◽  
Sung-Min Yoon
Keyword(s):  
Solid Electrolyte ◽  
Nitrogen Doping ◽  
Doping Effect ◽  
Cell Memory

Investigation of Single Event Induced Soft Errors in Programmable Metallization Cell Memory

2014 ◽  
Vol 61 (6) ◽  
pp. 3557-3563 ◽  
Author(s):  
Debayan Mahalanabis ◽  
Hugh J. Barnaby ◽  
Michael N. Kozicki ◽  
Vineeth Bharadwaj ◽  
Saba Rajabi
Keyword(s):  
Soft Errors ◽  
Single Event ◽  
Cell Memory ◽  
Programmable Metallization Cell

High-Performance Programmable Metallization Cell Memory With the Pyramid-Structured Electrode

2013 ◽  
Vol 34 (10) ◽  
pp. 1244-1246 ◽  
Author(s):  
Yu-Chih Huang ◽  
Wan-Lin Tsai ◽  
Chia-Hsin Chou ◽  
Chung-Yun Wan ◽  
Ching Hsiao ◽  
...  
Keyword(s):  
High Performance ◽  
Cell Memory ◽  
Programmable Metallization Cell

Low voltage cycling of programmable metallization cell memory devices

2011 ◽  
Vol 22 (25) ◽  
pp. 254017 ◽  
Author(s):  
D Kamalanathan ◽  
A Akhavan ◽  
M N Kozicki
Keyword(s):  
Low Voltage ◽  
Memory Devices ◽  
Cell Memory ◽  
Programmable Metallization Cell
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