scholarly journals Characterization of Silver Saturated-Ge45Te55Solid Electrolyte Films Incorporated by Nitrogen for Programmable Metallization Cell Memory Device

2007 ◽  
Vol 8 (2) ◽  
pp. 73-78 ◽  
Author(s):  
Soo-Jin Lee ◽  
Soon-Gil Yoon ◽  
Sung-Min Yoon ◽  
Byoung-Gon Yu
Keyword(s):  
Memory Device ◽  
Cell Memory ◽  
Programmable Metallization Cell

Characterization of a 4 Mbit bubble memory device with "Wide gap" permalloy propagation tracks

1985 ◽  
Vol 21 (5) ◽  
pp. 1681-1683 ◽  
Author(s):  
H. Inoue ◽  
M. Amatsu ◽  
T. Yanase ◽  
T. Majima ◽  
Y. Kaneko ◽  
...  
Keyword(s):  
Memory Device ◽  
Wide Gap

Characterization of a Ferroelectric-Gated Graphene Memory Device Fabricated on a Flexible Substrate by Transfer Process

2019 ◽  
Vol 19 (8) ◽  
pp. 4803-4806
Author(s):  
Shenawar Ali Khan ◽  
Hyeon-Seok Jeong ◽  
Sheik Abdur Rahman ◽  
Jin-Hyuk Bae ◽  
Woo Young Kim
Keyword(s):  
Transfer Process ◽  
Flexible Substrate ◽  
Memory Device

Structural and Electrical Characterization of a Block Copolymer-Based Unipolar Nonvolatile Memory Device

2011 ◽  
Vol 24 (3) ◽  
pp. 385-390 ◽  
Author(s):  
Nam-Goo Kang ◽  
Byungjin Cho ◽  
Beom-Goo Kang ◽  
Sunghoon Song ◽  
Takhee Lee ◽  
...  
Keyword(s):  
Block Copolymer ◽  
Nonvolatile Memory ◽  
Electrical Characterization ◽  
Memory Device ◽  
Nonvolatile Memory Device

Global transcriptional characterization of CD8+ T cell memory

2015 ◽  
Vol 27 (1) ◽  
pp. 4-9 ◽  
Author(s):  
Jan Böttcher ◽  
Percy A. Knolle
Keyword(s):  
T Cell ◽  
Cd8 T Cell ◽  
T Cell Memory ◽  
Cell Memory ◽  
Cd8 T Cell Memory

Synthesis and Electrical Characterization of a MOS Memory Containing Pt Nanoparticles Deposited at a SiO2/ HfO2 Interface

2004 ◽  
Vol 830 ◽  
Author(s):  
Ch. Sargentis ◽  
K. Giannakopoulos ◽  
A. Travlos ◽  
D. Tsamakis
Keyword(s):  
High Frequency ◽  
Semiconductor Nanocrystals ◽  
Electrical Characterization ◽  
Pt Nanoparticles ◽  
Memory Device ◽  
Memory Devices ◽  
High K ◽  
High K Dielectric ◽  
Mos Device

ABSTRACTMOS memory devices containing semiconductor nanocrystals have drawn considerable attention recently, due to their advantages when compared to the conventional memories. Only little work has been done on memory devices containing metal nanoparticles.We describe the fabrication of a novel MOS device with embedded Pt nanoparticles in the HfO2 / SiO2 interface of a MOS device. Using as control oxide, a high-k dielectric, our device has a great degree of scalability. The fabricated nanoparticles are very small (about 5 nm) and have high density. High frequency C-V measurements demonstrate that this device operates as a memory device.

Sign in / Sign up

Export Citation Format

Share Document