Improved Luminance Intensity of InGaN-GaN Light-Emitting Diode by Roughening both p-GaN and Undoped-GaN Surfaces and Applying a Mirror to the Sapphire Substrate Surface

2019 ◽  
Vol 6 (2) ◽  
pp. 201-203
Author(s):  
Yewchung S. Wu ◽  
Cheng Liao
Keyword(s):  
Sapphire Substrate ◽  
Light Emitting Diode ◽  
Substrate Surface ◽  
Light Emitting ◽  
Luminance Intensity

Improved Light Extraction Efficiency of Light-Emitting Diode Grown on Nanoscale-Silicon-Dioxide-Patterned Sapphire Substrate

2020 ◽  
Vol 12 (5) ◽  
pp. 647-651 ◽  
Author(s):  
Young Hoon Sung ◽  
Jaemin Park ◽  
Eun-Seo Choi ◽  
Hee Chul Lee ◽  
Heon Lee
Keyword(s):  
Silicon Dioxide ◽  
Sapphire Substrate ◽  
Extraction Efficiency ◽  
Light Emitting Diode ◽  
Light Extraction ◽  
Light Extraction Efficiency ◽  
Patterned Sapphire Substrate ◽  
Light Emitting ◽  
Sapphire Wafer ◽  
Luminescence Efficiency

A conical-shaped Si dioxide nano-pattern was employed to sapphire substrate in order to improve the light extraction efficiency of light-emitting diodes. The conical-shaped Si dioxide nano-patterns were fabricated on a 2-inch sapphire wafer using direct imprinting of hydrogen silsesquioxane material. A blue-LED structure was grown on conical-shaped silicon-dioxide nano-patterned sapphire substrates. Photoluminescence and electroluminescence measurements were used to confirm the effectiveness of the nanoscale Si oxide patterned sapphire. An improvement in the luminescence efficiency was observed when nanoscale Si oxide patterned sapphire substrate was used. 1.5 times higher PL intensity and 1.6 times higher EL intensity were observed for GaN LED structure grown on nanoscale Si oxide patterned sapphire, compared to LED structure grown on conventional flat sapphire wafer.

1 mW AlInGaN-based ultraviolet light-emitting diode with an emission wavelength of 348 nm grown on sapphire substrate

2002 ◽  
Vol 81 (14) ◽  
pp. 2508-2510 ◽  
Author(s):  
T. Wang ◽  
Y. H. Liu ◽  
Y. B. Lee ◽  
J. P. Ao ◽  
J. Bai ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Sapphire Substrate ◽  
Light Emitting Diode ◽  
Emission Wavelength ◽  
Light Emitting

scholarly journals Improving light-emitting diode performance through sapphire substrate double-side patterning

2013 ◽  
Vol 52 (2) ◽  
pp. 023002 ◽  
Author(s):  
Ho Ju Kang ◽  
Sang Uk Cho ◽  
Eung Soo Kim ◽  
Chang-Seok Kim ◽  
Myung Yung Jeong
Keyword(s):  
Sapphire Substrate ◽  
Light Emitting Diode ◽  
Light Emitting
Sign in / Sign up

Export Citation Format

Share Document