1 mW AlInGaN-based ultraviolet light-emitting diode with an emission wavelength of 348 nm grown on sapphire substrate
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2011 ◽
Vol 25
(19)
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pp. 2888-2896
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2008 ◽
Vol 45
(4)
◽
pp. 25-32
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2013 ◽
Vol 370
◽
pp. 314-318
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