Improved Model to Determine the Generation Lifetime in Short Channel SOI nMOSFETs

2019 ◽  
Vol 6 (4) ◽  
pp. 387-392
Author(s):  
Milene Galeti ◽  
Joao Antonio A. Martino ◽  
Eddy Simoen ◽  
Cor Claeys
Keyword(s):  
Short Channel ◽  
Improved Model ◽  
Generation Lifetime

Improved Model to Determine the Generation Lifetime in Double Gate SOI nMOSFETs

2019 ◽  
Vol 9 (1) ◽  
pp. 343-351
Author(s):  
M. Galeti ◽  
Joao A. Martino ◽  
E. Simoen ◽  
C. Claeys
Keyword(s):  
Double Gate ◽  
Improved Model ◽  
Generation Lifetime

Monte Carlo study of 50 nm-long single and dual-gate MODFETs: suppression of short-channel effects

1993 ◽  
Vol 3 (9) ◽  
pp. 1719-1728
Author(s):  
P. Dollfus ◽  
P. Hesto ◽  
S. Galdin ◽  
C. Brisset
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Study ◽  
Short Channel Effects ◽  
Short Channel ◽  
Channel Effects ◽  
Dual Gate

A NEW PUNCHTHROUGH MODEL FOR SHORT CHANNEL MOSFET

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-761-C4-764
Author(s):  
D. CHEN ◽  
Z. LI
Keyword(s):  
Short Channel

An Improved Model for Short-Term Traffic Forecasting Considering Weather Impacts

CICTP 2017 ◽  
2018 ◽  
Author(s):  
Xinchao Chen ◽  
Si Qin ◽  
Jian Zhang ◽  
Huachun Tan ◽  
Yunxia Xu ◽  
...  
Keyword(s):  
Short Term ◽  
Traffic Forecasting ◽  
Improved Model ◽  
Weather Impacts

Short Channel Poly-Si TFT with Single Grain Boundary by Excimer Laser Annealing on Al-masked a-Si Layer

2002 ◽  
Vol 715 ◽  
Author(s):  
Sang-Hoon Jung ◽  
Jae-Hoon Lee ◽  
Min-Koo Han
Keyword(s):  
Grain Boundary ◽  
Laser Annealing ◽  
Thin Film Transistor ◽  
High Mobility ◽  
Silicon Layer ◽  
Silicon Thin Film ◽  
Short Channel ◽  
Excimer Laser Annealing ◽  
Boundary Density ◽  
Single Grain

AbstractA short channel polycrystalline silicon thin film transistor (poly-Si TFT), which has single grain boundary in the center of channel, is reported. The reported poly-Si TFT employs lateral grain growth method through aluminum patterns, which acts as a selective beam mask and a lateral heat sink during the laser irradiation, on an amorphous silicon layer. The electrical characteristics of the proposed poly-Si TFT have been considerably improved due to grain boundary density lowered. The reported short channel poly-Si TFT with single grain boundary exhibits high mobility as 222 cm2/Vsec and large on/off current ratio exceeding 1 × 108.

Co-planar two-dimensional Metal-Insulator-Semiconductor Capacitor: Numerical study of the device electrostatics.

2017 ◽  
Author(s):  
Varun Bheemireddy
Keyword(s):  
Space Charge ◽  
High Performance ◽  
Numerical Study ◽  
2D Materials ◽  
Space Charge Density ◽  
Two Dimensional ◽  
Short Channel ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
New Family

The two-dimensional(2D) materials are highly promising candidates to realise elegant and e cient transistor. In the present letter, we conjecture a novel co-planar metal-insulator-semiconductor(MIS) device(capacitor) completely based on lateral 2D materials architecture and perform numerical study of the capacitor with a particular emphasis on its di erences with the conventional 3D MIS electrostatics. The space-charge density features a long charge-tail extending into the bulk of the semiconductor as opposed to the rapid decay in 3D capacitor. Equivalently, total space-charge and semiconductor capacitance densities are atleast an order of magnitude more in 2D semiconductor. In contrast to the bulk capacitor, expansion of maximum depletion width in 2D semiconductor is observed with increasing doping concentration due to lower electrostatic screening. The heuristic approach of performance analysis(2D vs 3D) for digital-logic transistor suggest higher ON-OFF current ratio in the long-channel limit even without third dimension and considerable room to maximise the performance of short-channel transistor. The present results could potentially trigger the exploration of new family of co-planar at transistors that could play a signi significant role in the future low-power and/or high performance electronics.<br>

Correlation of Electronic and Thermal Properties of Short Channel nMOSFETS

1999 ◽  
Author(s):  
M. Palaniappan ◽  
V. Ng ◽  
R. Heiderhoff ◽  
J.C.H. Phang ◽  
G.B.M. Fiege ◽  
...  
Keyword(s):  
Thermal Properties ◽  
Temperature Distribution ◽  
Heat Generation ◽  
Hot Spots ◽  
Light Emission ◽  
Photon Emission ◽  
Thermal Image ◽  
Short Channel ◽  
Physical Phenomena ◽  
Backside Illuminated

Abstract Light emission and heat generation of Si devices have become important in understanding physical phenomena in device degradation and breakdown mechanisms. This paper correlates the photon emission with the temperature distribution of a short channel nMOSFET. Investigations have been carried out to localize and characterize the hot spots using a spectroscopic photon emission microscope and a scanning thermal microscope. Frontside investigations have been carried out and are compared and discussed with backside investigations. A method has been developed to register the backside thermal image with the backside illuminated image.

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