Improved Model to Determine the Generation Lifetime in Double Gate SOI nMOSFETs

2019 ◽  
Vol 9 (1) ◽  
pp. 343-351
Author(s):  
M. Galeti ◽  
Joao A. Martino ◽  
E. Simoen ◽  
C. Claeys
Keyword(s):  
Double Gate ◽  
Improved Model ◽  
Generation Lifetime

Improved Model to Determine the Generation Lifetime in Short Channel SOI nMOSFETs

2019 ◽  
Vol 6 (4) ◽  
pp. 387-392
Author(s):  
Milene Galeti ◽  
Joao Antonio A. Martino ◽  
Eddy Simoen ◽  
Cor Claeys
Keyword(s):  
Short Channel ◽  
Improved Model ◽  
Generation Lifetime

An Improved Model for Short-Term Traffic Forecasting Considering Weather Impacts

CICTP 2017 ◽  
2018 ◽  
Author(s):  
Xinchao Chen ◽  
Si Qin ◽  
Jian Zhang ◽  
Huachun Tan ◽  
Yunxia Xu ◽  
...  
Keyword(s):  
Short Term ◽  
Traffic Forecasting ◽  
Improved Model ◽  
Weather Impacts

Simulation of Retention Characteristics in Double-Gate Structure Multi-Bit SONOS Flash Memory

2009 ◽  
Vol E92-C (5) ◽  
pp. 659-663 ◽  
Author(s):  
Doo-Hyun KIM ◽  
Il Han PARK ◽  
Seongjae CHO ◽  
Jong Duk LEE ◽  
Hyungcheol SHIN ◽  
...  
Keyword(s):  
Flash Memory ◽  
Double Gate ◽  
Gate Structure ◽  
Retention Characteristics

Independent-Double-Gate FinFET SRAM Technology

2013 ◽  
Vol E96.C (4) ◽  
pp. 413-423 ◽  
Author(s):  
Kazuhiko ENDO ◽  
Shin-ichi OUCHI ◽  
Takashi MATSUKAWA ◽  
Yongxun LIU ◽  
Meishoku MASAHARA
Keyword(s):  
Double Gate
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