Extensive Study of the Correlation between Contact Etch Stop Nitride film Properties and Negative Bias Temperature Instabilities Measured in pMOSFETS

2019 ◽  
Vol 6 (3) ◽  
pp. 355-369
Author(s):  
Daniel Benoit ◽  
Pierre Morin ◽  
Frank Perrier ◽  
Catherine Chaton ◽  
Marion Charleux ◽  
...  
Keyword(s):  
Extensive Study ◽  
Nitride Film ◽  
Negative Bias ◽  
Film Properties ◽  
Etch Stop ◽  
Bias Temperature Instabilities

Negative bias temperature instabilities in HfSiO(N)-based MOSFETs: Electrical characterization and modeling

2007 ◽  
Vol 47 (6) ◽  
pp. 880-889 ◽  
Author(s):  
M. Houssa ◽  
M. Aoulaiche ◽  
S. De Gendt ◽  
G. Groeseneken ◽  
M.M. Heyns
Keyword(s):  
Electrical Characterization ◽  
Negative Bias ◽  
Bias Temperature Instabilities

Negative Bias Temperature Instabilities in SiO[sub 2]/HfO[sub 2]-Based Hole Channel FETs

2004 ◽  
Vol 151 (12) ◽  
pp. F288 ◽  
Author(s):  
M. Houssa ◽  
S. De Gendt ◽  
G. Groeseneken ◽  
M. M. Heyns
Keyword(s):  
Negative Bias ◽  
Bias Temperature Instabilities

Influence of various process steps on the reliability of PMOSFETs submitted to negative bias temperature instabilities

2009 ◽  
Vol 49 (9-11) ◽  
pp. 1008-1012 ◽  
Author(s):  
Christelle Bénard ◽  
Gaëtan Math ◽  
Pascal Fornara ◽  
Jean-Luc Ogier ◽  
Didier Goguenheim
Keyword(s):  
Negative Bias ◽  
Bias Temperature Instabilities

The role of plasma chemistry on functional silicon nitride film properties deposited at low-temperature by mixing two frequency powers using PECVD

2016 ◽  
Vol 18 (18) ◽  
pp. 13033-13044 ◽  
Author(s):  
B. B. Sahu ◽  
Y. Y. Yin ◽  
T. Tsutsumi ◽  
M. Hori ◽  
Jeon G. Han
Keyword(s):  
Silicon Nitride ◽  
Low Temperature ◽  
Plasma Chemistry ◽  
Correlation Study ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Dual Frequency ◽  
Plasma Parameters ◽  
Film Properties

A correlation study of plasma parameters and film properties and the implication of dual frequency PECVD for industry are proposed.

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