Mass and Heat Transfer during the Chemical Vapor Deposition of Metals

Stable ultrathin polymer films synthesized via initiated chemical vapor deposition enable robust control of heterogeneous nucleation of CaCO3 on metal heat transfer surfaces at high temperatures.

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Continuous chemical vapor deposition processing with a moving finite thickness susceptor

Journal of Materials Research ◽

10.1557/jmr.2000.0050 ◽

2000 ◽

Vol 15 (2) ◽

pp. 317-328 ◽

Cited By ~ 19

Author(s):

Wilson K. S. Chiu ◽

Yogesh Jaluria

Keyword(s):

Heat Transfer ◽

Chemical Vapor Deposition ◽

Numerical Model ◽

Deposition Rate ◽

Residence Time ◽

Vapor Deposition ◽

Finite Thickness ◽

Chemical Vapor ◽

Design Parameters ◽

Heating Zone

Chemical vapor deposition (CVD) of thin films onto a moving surface is an important material processing technique for semiconductor fabrication, optical coatings, and many other applications. Continuous CVD processing offers an attractive solution to meet high volume requirements. In this study, the deposition on a finite thickness moving susceptor, considering surface reactions, is numerically investigated. When a susceptor is in motion, the reaction zone residence time and the coupling of conduction heat transfer in the susceptor with convection heat transfer in the gas flow significantly alter the deposition rate and film quality. A model is developed to quantify continuous CVD film production for several important design parameters. The numerical model is validated for the deposition of silicon through comparisons with analytical results and experimental data available in the literature. Films produced by continuous CVD are shown to be strongly dependent on susceptor speed, material selection, and susceptor thickness. Susceptor speed is directly linked to residence time in the reaction region, with lower residence times resulting in less time for reaction and heating, hence reducing growth rates. Increased thickness and susceptor thermal diffusivity alters the thermal energy distribution, thereby reducing the susceptor surface temperature and lowering the deposition rate. These effects may be overcome by increasing the length of the heating zone. Film quality is also influenced by the susceptor temperature, since reaction-controlled deposition typically produces different film structure than deposition under diffusion-controlled conditions. Overall, the results obtained demonstrate the feasibility of employing a moving finite thickness susceptor for CVD processing. A correlation of several operational parameters is also obtained for the film thickness. This may be used for the design and optimization of continuous CVD systems. The numerical model may also be used for considering deposition of other materials.

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Effect of Buoyancy, Susceptor Motion, and Conjugate Transport in Chemical Vapor Deposition Systems

Journal of Heat Transfer ◽

10.1115/1.2826049 ◽

1999 ◽

Vol 121 (3) ◽

pp. 757-761 ◽

Cited By ~ 8

Author(s):

W. K. S. Chiu ◽

Y. Jaluria

Keyword(s):

Heat Transfer ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Film Deposition ◽

Reactor Wall ◽

Transfer Rates ◽

Thermal Buoyancy ◽

Flow And Heat Transfer ◽

Feasible Alternative

The fluid flow and heat transfer in the chemical vapor deposition (CVD) manufacturing process are studied numerically. Several crucial aspects such as thermal buoyancy, continuous processing, and conjugate transport are considered. For each aspect, the predicted heat transfer rate and the susceptor temperature are computed and qualitatively linked with the rate and uniformity of film deposition. It is shown that buoyancy effects in helium carrier gas commonly used in diffusion-limited CVD has a negligible effect on deposition rates. Susceptor motion is shown as a feasible alternative to improving the productivity. Conjugate heat transfer effects that arise demonstrate that reactor wall thickness and material may be judiciously chosen to improve temperature uniformity and enhance heat transfer rates, thereby improving deposition rate, film uniformity, and quality.

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