Effect of Oxide Hydration on Surface Potential of Oxidized P-Type Silicon

1965 ◽  
Vol 112 (5) ◽  
pp. 528 ◽  
Author(s):  
A. B. Kuper ◽  
E. H. Nicollian
Keyword(s):  
Surface Potential ◽  
Type Silicon ◽  
P Type

MONTE CARLO SIMULATION OF GIANT PIEZORESISTANCE EFFECT IN p-TYPE SILICON NANOSTRUCTURES

2011 ◽  
Vol 25 (12n13) ◽  
pp. 995-1001 ◽  
Author(s):  
T. T. TRANG NGHIÊM ◽  
V. AUBRY-FORTUNA ◽  
C. CHASSAT ◽  
A. BOSSEBOEUF ◽  
P. DOLLFUS
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Surface Potential ◽  
High Performance ◽  
Strain Effect ◽  
Si Nanowires ◽  
Type Silicon ◽  
Depletion Depth ◽  
Simulation Based ◽  
P Type

We present a study of the giant piezoresistance effect in p-type silicon using full-band Monte Carlo simulation based on 30-band k.p calculation. This effect has been demonstrated experimentally in Si nanowires by He and Yang. By including the well-known strain effect on the band structure, and by introducing a law of variation of the surface potential according to the applied mechanical stress, we can reproduce this effect. This variation of surface potential modulates the depletion depth and then the conductivity of the structure. This modulation induces a strong variation of the total amount of carriers available for the conduction, which increases drastically this piezoresistive effect. This is probably the main origin of this effect, which may be used to achieve high performance MEMS sensors.

scholarly journals Determination of piezo-resistive coefficient π44 in p-type silicon by comparing simulation and measurement of pressure sensors

AIP Advances ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 085005
Author(s):  
Kevin Lauer ◽  
Geert Brokmann ◽  
Mario Bähr ◽  
Thomas Ortlepp
Keyword(s):  
Pressure Sensors ◽  
Type Silicon ◽  
P Type

Modification of p-type Silicon for the Photoelectrochemical Reduction of CO2

2019 ◽  
Vol 19 (35) ◽  
pp. 1-7 ◽  
Author(s):  
Thomas Cottineau ◽  
Mario Morin ◽  
Daniel Bélanger
Keyword(s):  
Type Silicon ◽  
Reduction Of Co2 ◽  
P Type

Radiation damage in p-type silicon irradiated with neutrons and protons

2009 ◽  
Vol 599 (1) ◽  
pp. 60-65 ◽  
Author(s):  
Vladimir Cindro ◽  
Gregor Kramberger ◽  
Manuel Lozano ◽  
Igor Mandić ◽  
Marko Mikuž ◽  
...  
Keyword(s):  
Radiation Damage ◽  
Type Silicon ◽  
P Type

Surface charge transfer induced p-CdS nanoribbon/n-Si heterojunctions as fast-speed self-driven photodetectors

2015 ◽  
Vol 3 (24) ◽  
pp. 6307-6313 ◽  
Author(s):  
Chao Xie ◽  
Fangze Li ◽  
Longhui Zeng ◽  
Linbao Luo ◽  
Li Wang ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Surface Charge ◽  
Fast Speed ◽  
Type Silicon ◽  
P Type

Heterojunctions composed of single p-type CdS nanoribbons (NRs) and n-type silicon (Si) were successfully fabricated and can be applied as fast-speed self-driven visible photodetectors.

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