Thermal Cycling and Surface Reconstruction in Aluminum Thin Films

1969 ◽  
Vol 116 (3) ◽  
pp. 361 ◽  
Author(s):  
C. J. Santoro
Keyword(s):  
Thin Films ◽  
Thermal Cycling ◽  
Surface Reconstruction

scholarly journals Exotic Long-Range Surface Reconstruction on La0.7Sr0.3MnO3 Thin Films

2021 ◽  
Vol 13 (7) ◽  
pp. 9166-9173
Author(s):  
Kyle P. Kelley ◽  
Vinit Sharma ◽  
Wenrui Zhang ◽  
Arthur P. Baddorf ◽  
Von B. Nascimento ◽  
...  
Keyword(s):  
Thin Films ◽  
Long Range ◽  
Surface Reconstruction

Effects of Confinement on Plastic Deformation in Passivated AL Films

1993 ◽  
Vol 308 ◽  
Author(s):  
S.G.H. Anderson ◽  
I.-S. Yeo ◽  
P.S. Ho ◽  
S. Ramaswami ◽  
R. Cheung
Keyword(s):  
Thin Films ◽  
Plastic Deformation ◽  
Thermal Cycling ◽  
Temperature Behavior ◽  
Weighted Sum ◽  
Wafer Curvature ◽  
Tension And Compression ◽  
Curvature Measurements

ABSTRACTWafer curvature measurements of a trilayer (SiO2 / AlSiCu / Si) structure are compared to that predicted by a weighted sum of individual measurements of SiO2 and AlSiCu films on Si, and significant differences are found to exist for temperatures above 200°C. A straightforward analysis of the stresses in each layer has been modeled using an extension of a model by Feng et al. which assumes uniform plastic deformation throughout the Al. The modeling results suggest a straightforeward method for determining stresses in deformable thin films that are confined by elastic overlayers. A comparison of the stress-temperature behavior for unpassivated and passivated AlSiCu films reveals that the confined films exhibit less plastic deformation and both higher tension and compression during thermal cycling.

Stress effects in thermal cycling of copper (magnesium) thin films

1995 ◽  
Vol 66 (16) ◽  
pp. 2074-2076 ◽  
Author(s):  
J. J. Toomey ◽  
S. Hymes ◽  
S. P. Murarka
Keyword(s):  
Thin Films ◽  
Thermal Cycling ◽  
Stress Effects

scholarly journals Effect of Thermal Cycling on the Shape Memory Characteristics of Ti-50at.% and 52at.%Ni Thin Films.

1996 ◽  
Vol 47 (3) ◽  
pp. 229-234 ◽  
Author(s):  
Morio SATO ◽  
Akira ISHIDA ◽  
Atsushi TAKEI ◽  
Shuichi MIYAZAKI
Keyword(s):  
Thin Films ◽  
Thermal Cycling ◽  
Shape Memory ◽  
Memory Characteristics

Thermal Cycling Fatigue In Aluminum-Alloy Thin Films On Silicon Substrate

1997 ◽  
Vol 505 ◽  
Author(s):  
J. Koike ◽  
S. Utsunomiya ◽  
K. Maruyama
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Aluminum Alloy ◽  
Thermal Cycling ◽  
Silicon Substrate ◽  
Room Temperature ◽  
Crack Formation ◽  
Continuous Decrease ◽  
Thermal Cycling Fatigue

ABSTRACTThermal cycling was performed in Al-lmo%Si thin films deposited on Si wafers. After a given number of cycling between room temperature and 723 K, residual stress was measured at room temperure. Residual stress was found to increase with increasing the cycling number up to the 4th cycle, followed by further a continuous decrease by further cycling. The intial increase was found to be related to the increase of lattice dislcocations and their tangling. The following decrease was caused by crack formation along grain boundaties or by film delamination in some cases.

Stress behaviour of magnetron-sputtered SiC thin films on thermal cycling and annealing

1991 ◽  
Vol 201 (1) ◽  
pp. 69-80 ◽  
Author(s):  
Jwo-Huei Jou ◽  
Li Hsu ◽  
Spring Yeh ◽  
Ted Shyy
Keyword(s):  
Thin Films ◽  
Thermal Cycling ◽  
Stress Behaviour

Effect of oxygen on the thermomechanical behavior of passivated Cu thin films

2003 ◽  
Vol 18 (9) ◽  
pp. 2122-2134 ◽  
Author(s):  
Jonathan B. Shu ◽  
Susan B. Clyburn ◽  
Thomas E. Mates ◽  
Shefford P. Baker
Keyword(s):  
Thin Films ◽  
Thermal Cycling ◽  
Secondary Ion Mass Spectrometry ◽  
Thermomechanical Behavior ◽  
Silicon Substrates ◽  
Dislocation Glide ◽  
Before And After ◽  
Passivation Layers ◽  
Dislocation Energy ◽  
Effect Of Oxygen

The thermomechanical behavior of Cu thin films, 600–1125 nm thick and encapsulated between SiNx barrier and SiNx or AlNx passivation layers on silicon substrates, was studied during thermal cycling between room temperature and 400 or 500 °C using the substrate curvature method. Films were prepared with varying oxygen contents, and the distribution of oxygen through the thickness of selected films was studied before and after thermal cycling using secondary ion mass spectrometry. Large variations in the thermomechanical behavior with oxygen content were found and correlated with segregation of oxygen to the film/barrier and film/passivation interfaces. These variations are thought to be due to recovery of stored misfit dislocation energy, which is, in turn, controlled by oxygen in the film. Effects of oxygen on film deformation through variations in interfacial adhesion and diffusion-induced dislocation glide are considered.

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