D-C Dielectric Breakdown of Amorphous Silicon Dioxide Films at Room Temperature

1968 ◽  
Vol 115 (1) ◽  
pp. 88 ◽  
Author(s):  
F. L. Worthing
Keyword(s):  
Silicon Dioxide ◽  
Amorphous Silicon ◽  
Room Temperature ◽  
Dielectric Breakdown ◽  
Amorphous Silicon Dioxide ◽  
Silicon Dioxide Films

Photoluminescence from amorphous SiO2/Silicon/amorphous SiO2single quantum well structures

2000 ◽  
Vol 638 ◽  
Author(s):  
Y.Q. Wang ◽  
Y. Ishikawa ◽  
N. Shibata
Keyword(s):  
Quantum Well ◽  
Silicon Dioxide ◽  
Amorphous Silicon ◽  
Room Temperature ◽  
Peak Position ◽  
Single Quantum ◽  
Amorphous Sio2 ◽  
Single Quantum Well ◽  
Quantum Well Structures ◽  
Amorphous Silicon Dioxide

AbstractAmorphous silicon dioxide/silicon/amorphous silicon dioxide single quantum well structures were fabricated by oxygen implantation followed by thermal oxidation. No photoluminescence (PL) was observed from the as grown samples. We found that annealing in hydrogen allows the single quantum well (SQW) structures to emit two-peak (blue and yellow) PL at room temperature (RT). The blue PL (2.9 eV) does not change with the thickness of Si layers or the temperature. The yellow peak varied from 2.0 eV to 2.4 eV with thinning of the Si layer from 5 nm to 0.5 nm. Lowering the temperature also changed the yellow peak position of the 1.5 nm Si-SQW structure from 2.3 eV (RT) to 2.6 eV (8.4 K). We conclude that the blue PL is from SiO2 and the yellow PL is caused by a recombination process in the Si-SQW.

scholarly journals Сравнительный фотолюминесцентный анализ точечных дефектов в SiO-=SUB=-2-=/SUB=-, индуцированных имплантацией ионов Ar-=SUP=-+-=/SUP=- и облучением нейтронами

2019 ◽  
Vol 45 (5) ◽  
pp. 24
Author(s):  
И.П. Щербаков ◽  
А.Е. Чмель
Keyword(s):  
Silicon Dioxide ◽  
Amorphous Silicon ◽  
Point Defects ◽  
Photoluminescence Spectrum ◽  
Thermal Neutrons ◽  
Optical Transitions ◽  
Atomic Collisions ◽  
Amorphous Silicon Dioxide ◽  
Spectral Bands ◽  
Atomic Nuclei

AbstractThe introduction of Si^+ ions and ions of other elements into amorphous silicon dioxide during their interaction causes damage to the structural bonds, which is observed in the vibrational spectral bands. Pure SiO_2 has no optical transitions but the bands of induced point defects appear in the photoluminescence spectrum when ions/neutrons are introduced. The generation of photoluminescence-active defects by fluxes of Ar^+ ion and thermal neutrons is compared. It is shown that the nature of damage to the structure is associated with both the specifics of the synthesis/processing of the material and the features of the interaction between the substance and ions (atomic collisions) and neutrons (collisions with atomic nuclei).

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