The Detection of Silicon-Oxynitride Layers on the Surfaces of Silicon-Nitride Films by Auger Electron Emission

1972 ◽  
Vol 119 (6) ◽  
pp. 791 ◽  
Author(s):  
H. G. Maguire ◽  
P. D. Augustus
Keyword(s):  
Silicon Nitride ◽  
Electron Emission ◽  
Auger Electron ◽  
Silicon Oxynitride ◽  
Silicon Nitride Films

Quasi-Stoichiometric Silicon Nitride Thin Films Deposited by Remote Plasma-Enhanced Chemical-Vapor Deposition

1992 ◽  
Vol 284 ◽  
Author(s):  
G. Lucovsky ◽  
Y. Ma ◽  
S. S. He ◽  
T. Yasuda ◽  
D. J. Stephens ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Chemical Vapor ◽  
Electrical Performance ◽  
Remote Plasma ◽  
Silicon Nitride Films ◽  
On Line

ABSTRACTConditions for depositing quasi-stoichiometric silicon nitride films by low-temperature, remote plasma-enhanced chemical-vapor deposition, RPECVD, have been identified using on-line Auger electron spectroscopy, AES, and off-line optical and infrared, IR, spectroscopies. Quasi-stoichiometric films, by the definition propose in this paper, do not display spectroscopic evidence for Si-Si bonds, but contain bonded-H in Si-H and Si-NH arrangements. Incorporation of RPECVD nitrides into transistor devices has demonstrated that electrical performance is optimized when the films are quasi-stoichiometric with relatively low Si-NH concentrations.

Oxygenated and Fluorinated Amorphous Silicon Nitride Films and their Use in Thin Film Transistors

1989 ◽  
Vol 149 ◽  
Author(s):  
P. K. Bhat ◽  
H. Ogura ◽  
A. Madan
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
Drain Current ◽  
Silicon Oxynitride ◽  
Amorphous Silicon Nitride ◽  
Silicon Nitride Films ◽  
Insulator Film

ABSTRACTWe present a comparison of the properties of films of amorphous silicon nitride, amorphous silicon oxynitride, and amorphous fluorinated silicon nitride deposited by plasma enhanced chemical vapor deposition. The properties of fluorinated silicon nitride films degrade when exposed to air. TFT devices fabricated with silicon nitride and silicon oxynitride insulators show thteshold voltages ≤3 V and source drain current ON/OFF ratios exceeding 107 for gate voltages smaller than 20 V, whereas TFTs with fluorinated silicon nitride insulators show an inferior performance. We also present ideas on the possible relation between the stress in the insulator film and the reliability of TFTs fabricated using these layers.

scholarly journals Material Structure and Mechanical Properties of Silicon Nitride and Silicon Oxynitride Thin Films Deposited by Plasma Enhanced Chemical Vapor Deposition

Surfaces ◽  
2018 ◽  
Vol 1 (1) ◽  
pp. 59-72 ◽  
Author(s):  
Zhenghao Gan ◽  
Changzheng Wang ◽  
Zhong Chen
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Fracture Toughness ◽  
Silicon Nitride ◽  
Flow Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon Oxynitride ◽  
Flow Rates ◽  
Silicon Nitride Films

Silicon nitride and silicon oxynitride thin films are widely used in microelectronic fabrication and microelectromechanical systems (MEMS). Their mechanical properties are important for MEMS structures; however, these properties are rarely reported, particularly the fracture toughness of these films. In this study, silicon nitride and silicon oxynitride thin films were deposited by plasma enhanced chemical vapor deposition (PECVD) under different silane flow rates. The silicon nitride films consisted of mixed amorphous and crystalline Si3N4 phases under the range of silane flow rates investigated in the current study, while the crystallinity increased with silane flow rate in the silicon oxynitride films. The Young’s modulus and hardness of silicon nitride films decreased with increasing silane flow rate. However, for silicon oxynitride films, Young’s modulus decreased slightly with increasing silane flow rate, and the hardness increased considerably due to the formation of a crystalline silicon nitride phase at the high flow rate. Overall, the hardness, Young modulus, and fracture toughness of the silicon nitride films were greater than the ones of silicon oxynitride films, and the main reason lies with the phase composition: the SiNx films were composed of a crystalline Si3N4 phase, while the SiOxNy films were dominated by amorphous Si–O phases. Based on the overall mechanical properties, PECVD silicon nitride films are preferred for structural applications in MEMS devices.

Band-tail photoluminescence in hydrogenated amorphous silicon oxynitride and silicon nitride films

2003 ◽  
Vol 93 (1) ◽  
pp. 239-244 ◽  
Author(s):  
Hiromitsu Kato ◽  
Norihide Kashio ◽  
Yoshimichi Ohki ◽  
Kwang Soo Seol ◽  
Takashi Noma
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Oxynitride ◽  
Band Tail ◽  
Silicon Nitride Films ◽  
Hydrogenated Amorphous

Temperature Dependence of the Intrinsic Stress and Biaxial Modulus of Plasma Deposited Silicon Nitride and Silicon Oxynitride Films

1994 ◽  
Vol 356 ◽  
Author(s):  
David R. Harding ◽  
Linus T. Ogbuji
Keyword(s):  
Thin Films ◽  
Nitrous Oxide ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Deposition Temperature ◽  
Silicon Oxynitride ◽  
Intrinsic Stress ◽  
Amorphous Silicon Nitride ◽  
Silicon Nitride Films ◽  
Annealing Cycle

AbstractThe intrinsic stress and biaxial modulus of thin films of amorphous silicon nitride (0.5μm) and silicon oxynitride (1.5 to 2.5 μm) were measured following deposition (Ts=260 to 610°C), and then at discrete intervals throughout an annealing cycle. The biaxial modulus and intrinsic stress of the silicon nitride films increased from 110 GPa and 130 MPa, respectively, to 180 GPa and 680 MPa as the deposition temperature increased from Ts=340°C to Ts=610°C. The elemental composition was unaffected by the deposition temperature. Annealing at 1100°C increased the intrinsic stress to ≃ 1.8 GPa, as nitrogen and hydrogen were lost. Films with “near-stoichiometric” compositions (SiN1.1; H = 12 at.%) did not crack.Adding oxygen to form silicon oxynitride lowered both the biaxial modulus (20–30 GPa) and the intrinsic stress (−50 to 100 MPa). All the silicon oxynitride compositions (SiO0.3N1.0 to SiO1.7N0.5) were unstable when annealed above the deposition temperature (260°C). Films grown using mostly nitrous oxide (R = N2O/(N20+NH3) < 0.5) oxidized at 350°C to form silica. Simultaneously, the biaxial modulus and intrinsic stress increased to 100 GPa and 170 MPa, respectively. Films grown from mostly ammonia (R <0.5) lost nitrogen and hydrogen and cracked when the temperature exceeded the deposition temperature by 40 to 90°C. The stress induced by the elemental loss was ≃ 600 MPa.

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