Band-tail photoluminescence in hydrogenated amorphous silicon oxynitride and silicon nitride films

2003 ◽  
Vol 93 (1) ◽  
pp. 239-244 ◽  
Author(s):  
Hiromitsu Kato ◽  
Norihide Kashio ◽  
Yoshimichi Ohki ◽  
Kwang Soo Seol ◽  
Takashi Noma
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Oxynitride ◽  
Band Tail ◽  
Silicon Nitride Films ◽  
Hydrogenated Amorphous

Optical and Electrical Properties of Hydrogenated Amorphous Silicon Nitride Films Deposited in Various PECVD systems

1986 ◽  
Vol 68 ◽  
Author(s):  
Nancy Voke ◽  
Jerzy Kanicki
Keyword(s):  
Silicon Nitride ◽  
Electrical Properties ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Optical And Electrical Properties ◽  
Amorphous Silicon Nitride ◽  
Full Characterization ◽  
Silicon Nitride Films ◽  
Hydrogenated Amorphous

Hydrogenated amorphous silicon nitride films, prepared in various commercially available plasma enhanced chemical vapor deposition systems, have been investigated in terms of different deposition conditions.The full characterization of these gate insulators has been carried out by different techniques.Experimental data and interesting findings obtained from this study are presented.Special attention has been devoted to the influence of hydrogen on optical and electrical properties.

Chemical and Mechanical Properties of Hydrogenated Amorphous Silicon Nitride Films Deposited in Various PECVD Systems

1986 ◽  
Vol 68 ◽  
Author(s):  
Jerzy Kanicki ◽  
Nancy Voke
Keyword(s):  
Mechanical Properties ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Amorphous Silicon Nitride ◽  
Full Characterization ◽  
Silicon Nitride Films ◽  
Physico Chemical ◽  
Hydrogenated Amorphous

Hydrogenated amorphous silicon nitride films, prepared in various commercially available plasma enhanced chemical vapor deposition systems, have been investigated in terms of different deposition conditions.The full characterization of these gate insulators has been carried out by different techniques.Experimental data and interesting findings obtained from this study are presented.Indeed, some valuable relationships between physico-chemical and mechanical properties have been established.Special attention has been devoted to the influence of hydrogen on these properties.

Percolation Behaviour in the Electrical Characteristics of Hydrogenated Amorphous Silicon Nitride Films.

1992 ◽  
Vol 258 ◽  
Author(s):  
J.M. López-Villegas ◽  
B. Garrido ◽  
M.S. Benrakkad ◽  
J. Samitier ◽  
E. Bertran ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Photoelectron Spectroscopy ◽  
Hydrogenated Amorphous Silicon ◽  
Electrical Characteristics ◽  
Amorphous Silicon Nitride ◽  
Silicon Nitride Films ◽  
Rf Glow Discharge ◽  
Ohmic Conductivity ◽  
Hydrogenated Amorphous

ABSTRACTThe electro-optical properties of hydrogenated amorphous silicon nitride films (a-SiNx:H) prepared by rf glow discharge of SiH4 and N2 have been determined as a function of the silicon content in the alloy. The stoichiometry and structure of the layers have been studied by ellipsometry, infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS). Two different electrical behaviours have been found. The samples with x>0.8 show conductivity based on the Frenkel-Poole mechanism, while the samples with x<0.8 show quasi-ohmic conductivity. Both kinds of conduction and the transition between them are analyzed in the framework of the percolation theory. In this context, the correlation between the stoichiometry and structure of the layers with their electrical behaviour indicate that the transition from the Frenkel-Poole to the quasi-ohmic conduction is a consequence of the formation of conducting paths as the percolation threshold of Si-Si bonds is reached.

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