Kinetics of Thermal Growth of Ultra-Thin Layers of SiO[sub 2] on Silicon

1972 ◽  
Vol 119 (4) ◽  
pp. 530 ◽  
Author(s):  
Y. J. von der Meulen
Keyword(s):  
Thin Layers ◽  
Thermal Growth ◽  
Kinetics Of

scholarly journals DRYING KINETICS OF PEANUT KERNELS IN THIN LAYERS

2017 ◽  
Vol 37 (5) ◽  
pp. 994-1003 ◽  
Author(s):  
André L. D. Goneli ◽  
Willian D. Araujo ◽  
Cesar P. Hartmann Filho ◽  
Elton A. S. Martins ◽  
Guilherme C. Oba
Keyword(s):  
Drying Kinetics ◽  
Thin Layers ◽  
Kinetics Of

Ultra rapid heating by spontaneous mixing reactions in metal-metal multilayer composites

1990 ◽  
Vol 5 (8) ◽  
pp. 1656-1661 ◽  
Author(s):  
F. Bordeaux ◽  
A. R. Yavari
Keyword(s):  
Heat Release ◽  
Rapid Heating ◽  
Metal Layer ◽  
Mixing Time ◽  
Exothermic Reaction ◽  
Thin Layers ◽  
Heat Of Mixing ◽  
Metal Metal ◽  
Lower Melting Point ◽  
Kinetics Of

The mixing of multilayers of two pure metals or alloys A and B with strong negative heat of mixing ΔHm can result in rapid heat release provided that the mixing time is short compared to the time to dissipate ΔHm in the environment, which is the case for sufficiently thin layers. The mixing reaction sets off the heat release when the composite is heated up to temperatures near or equal to the melting temperature of the metal layer with the lower melting point. Experimental results are given for the mechanisms and for the kinetics of the exothermic reaction. Possible applications of these materials are given.

scholarly journals CONVECTIVE HOT AIR DRYING KINETICS OF RED BEETROOT IN THIN LAYERS

2020 ◽  
Vol 14 ◽  
Author(s):  
Abhishek Dasore ◽  
Tarun Polavarapu ◽  
Ramakrishna Konijeti ◽  
Naveen Puppala
Keyword(s):  
Drying Kinetics ◽  
Thin Layers ◽  
Hot Air Drying ◽  
Air Drying ◽  
Hot Air ◽  
Kinetics Of

Kinetics of interface state-limited hole injection in α-naphthylphenylbiphenyl diamine (α-NPD) thin layers

2009 ◽  
Vol 159 (5-6) ◽  
pp. 480-486 ◽  
Author(s):  
Germà Garcia-Belmonte ◽  
Juan Bisquert ◽  
Paulo R. Bueno ◽  
C.F.O. Graeff ◽  
F.A. Castro
Keyword(s):  
Interface State ◽  
Thin Layers ◽  
Hole Injection ◽  
Kinetics Of

Kinetics of thermal growth of thin silicon oxide films

1986 ◽  
Vol 41 (10) ◽  
pp. 2699-2705 ◽  
Author(s):  
G.C. Sarti ◽  
F. Santarelli ◽  
G. Camera Roda
Keyword(s):  
Silicon Oxide ◽  
Oxide Films ◽  
Thermal Growth ◽  
Thin Silicon ◽  
Kinetics Of

Kinetics of iodine doping and dedoping processes in thin layers of ply-p-phenylene azomethine

1985 ◽  
Vol 7 (3) ◽  
pp. 199-207 ◽  
Author(s):  
B. Chague ◽  
J.P. Germain ◽  
C. Maleysson ◽  
H. Robert
Keyword(s):  
Thin Layers ◽  
Iodine Doping ◽  
Kinetics Of

scholarly journals A Mathematical Model for Dehydration by Successive Pressure Drops: Simulation of Discarded Potatoes Dehydration

2021 ◽  
Vol 8 (2) ◽  
pp. 26-39
Author(s):  
Sebastian Gutierrez-Pacheco ◽  
Joahnn H Palacios ◽  
Alfonso Parra-Coronado ◽  
Stéphane Godbout
Keyword(s):  
Pressure Drop ◽  
Drying Kinetics ◽  
Operating Conditions ◽  
Thin Layers ◽  
Drying Rate ◽  
Pressure Drops ◽  
Mathematical Simulations ◽  
Kinetics Of ◽  
By Products ◽  
Selection Of

Dehydration by Successive Pressure Drops (SPD) is a process with high potential for treating heat-sensitive materials; this includes agro-industry by-products. However, the response of drying kinetics to operating conditions of SPD is not fully understood. The present manuscript refers to mathematical simulations to describe drying kinetics of discarded potatoes using SPD. While there are numerous theoretical, semi-theorical and empirical mathematical models, the selection of the appropriate model is a rigorous process. In this paper, the Thompson thin-layer semi-theoretical model was chosen since the assumptions for this model (e.g., product is arranged in thin layers) are fulfilled for the SPD. As a result of mathematical simulation, it was possible to describe the drying kinetics in terms of the major parameters of SPD namely pressurizing level (Pa) and the Frequency of Pressure Drop (FPD). The dehydration by SPD allows the removal of water from the material, mainly at the pressure drop. If this stage occurs more frequently, the drying rate increases. The model developed describes at less 91% of the variability of the experimental data. It is recommended to use high FPD and Pa equals to 0.50 MPa.

Growth and Characterization of Silicon-Germanium Films on Oxide by VLPCVD/PE-VLPCVD

1993 ◽  
Vol 317 ◽  
Author(s):  
Julie A. Tsai ◽  
Rafael Reif
Keyword(s):  
Growth Rates ◽  
Silicon Germanium ◽  
Chemical Vapor ◽  
Thin Layers ◽  
Si Substrates ◽  
Growth Modes ◽  
Thermal Growth ◽  
Pressure Chemical ◽  
Gas Ratio

ABSTRACTResults of Si1-xGex deposition on oxide-coated Si substrates using a PE-VLPCVD (Plasma-Enhanced Very-Low-Pressure Chemical Vapor Deposition) reactor are presented. Thin layers of poly-Si1-xGex deposited with SiH4 and GeH4 at ≤ 600°C had low C and O levels. Two growth modes were examined at 500°C: plasma-initiated thermal growth (VLPCVD) and full plasma-enhanced deposition (PE-VLPCVD). In both cases, Ge incorporation increases sublinearly with gas ratio, growth rates increase with Ge content, and the transition temperature between polycrystalline and amorphous deposition is lower for Si1-xGex than Si. On the other hand, compared to thermal growth, plasma-enhanced deposition promotes not only higher growth rates but also improved structural properties such as smoother surface Morphology, More columnar and oriented grains, and the unique feature of direct deposition onto oxide.

Sign in / Sign up

Export Citation Format

Share Document